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BUX10_03

Description
POWER TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size46KB,4 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Download Datasheet Parametric View All

BUX10_03 Overview

POWER TRANSISTOR

BUX10_03 Parametric

Parameter NameAttribute value
stateACTIVE
Transistor typeuniversal power supply
®
BUX10
HIGH POWER NPN SILICON TRANSISTOR
s
s
s
s
STMicroelectronics PREFERRED
SALESTYPE
NPN TRANSISTOR
HIGH CURRENT CAPABILITY
FAST SWITCHING SPEED
APPLICATIONS
s
MOTOR CONTROL
s
LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The BUX10 is a silicon Multi-Epitaxial Planar
NPN transistor in Jedec TO-3 metal case,
intended for use in switching and linear
applications in military and industrial equipment.
1
bs
O
I
C
I
CM
I
B
P
tot
T
stg
T
j
et
l
o
ro
P
e
uc
d
s)
t(
O
-
so
b
te
le
ro
P
2
TO-3
uc
d
s)
t(
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CBO
V
CEX
V
CEO
V
EBO
Parameter
Collector-base Voltage (I
E
= 0)
Collector-emitter Voltage (V
BE
= - 1.5V)
Collector-emitter Voltage (I
B
= 0)
Emitter-base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (t
P
< 10 ms)
Base Current
Total Power Dissipation at T
case
Storage Temperature
25 C
o
Value
160
160
125
7
25
30
5
150
-65 to 200
200
Unit
V
V
V
V
A
A
A
W
o
o
C
C
Max Operating Junction Temperature
March 2003
1/4
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