®
BUV298AV
NPN TRANSISTOR POWER MODULE
s
s
s
s
s
s
HIGH CURRENT POWER BIPOLAR MODULE
VERY LOW R
th
JUNCTION CASE
SPECIFIED ACCIDENTAL OVERLOAD
AREAS
INSULATED CASE (2500V RMS)
EASY TO MOUNT
LOW INTERNAL PARASITIC INDUCTANCE
INDUSTRIAL APPLICATIONS:
s
MOTOR CONTROL
s
SMPS & UPS
s
WELDING EQUIPMENT
Pin 4 not connected
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEV
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
V
ISO
Parameter
Collector-Emitter Voltage (V
BE
= -5 V)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (t
p
= 10 ms)
Base Current
Base Peak Current (t
p
= 10 ms)
Total Dissipation at T
C
= 25 C
Storage Temperature
Max. Operating Junction Temperature
Insulation Withstand Voltage (AC-RMS)
o
Value
1000
450
7
50
75
10
16
250
-55 to 150
150
2500
Unit
V
V
V
A
A
A
A
W
o
o
o
V
CEO(sus)
Collector-Emitter Voltage (I
B
= 0)
C
C
C
1/7
October 2001
BUV298AV
THERMAL DATA
R
thj-case
R
thc-h
Thermal Resistance Junction-case
Max
Thermal Resistance Case-heatsink With Conductive
Grease Applied
Max
0.5
0.05
o
o
C/W
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
I
CER
I
CEV
I
EBO
Parameter
Collector Cut-off
Current (R
BE
= 5
Ω)
Collector Cut-off
Current (V
BE
= -5V)
Emitter Cut-off Current
(I
C
= 0)
Test Conditions
V
CE
= V
CEV
V
CE
= V
CEV
V
CE
= V
CEV
V
CE
= V
CEV
V
EB
= 5 V
I
C
= 0.2 A
L = 25 mH
V
clamp
= 450 V
I
C
= 32 A
I
C
= 32 A
I
C
= 32 A
I
C
= 32 A
I
C
= 32 A
V
CE
= 5 V
I
B
= 6.4 A
I
B
= 6.4 A
I
B
= 6.4 A
I
B
= 6.4 A
T
j
= 100
o
C
T
j
= 100 C
160
o
Min.
Typ.
Max.
0.4
2
0.4
2
2
Unit
mA
mA
mA
mA
mA
V
T
j
= 100
o
C
T
j
= 100 C
o
V
CEO(sus)
∗
Collector-Emitter
Sustaining Voltage
h
FE
∗
V
CE(sat)
∗
V
BE(sat)
∗
di
C
/dt
DC Current Gain
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Rate of Rise of
On-state Collector
450
12
0.35
0.6
1
0.9
210
4.5
2.5
2.2
0.2
0.45
450
8
4
4.5
0.4
0.7
1.2
2
1.5
1.5
V
V
V
V
A/µs
V
V
µs
µs
µs
V
V
CC
= 300 V R
C
= 0
t
p
= 3
µs
o
I
B1
= 9.6 A T
j
= 100 C
V
CC
= 300 V R
C
= 9.3
Ω
I
B1
= 9.6 A T
j
= 100
o
C
V
CC
= 300 V R
C
= 9.3
Ω
I
B1
= 9.6 A T
j
= 100
o
C
I
C
= 32 A
V
BB
= -5 V
V
clamp
= 450
L = 78
µH
V
CC
= 50 V
R
BB
= 0.39
Ω
V I
B1
= 6.4 A
o
T
j
= 100 C
V
CE
(3
µs)
Collector-Emitter
Dynamic Voltage
V
CE
(5
µs)
Collector-Emitter
Dynamic Voltage
t
s
t
f
t
c
V
CEW
Storage Time
Fall Time
Cross-over Time
Maximum Collector
Emitter Voltage
Without Snubber
I
CWoff
= 48 A I
B1
= 6.4 A
V
BB
= -5 V V
CC
= 50 V
L = 52
µH
R
BB
= 0.39
Ω
T
j
= 125
o
C
∗
Pulsed: Pulse duration = 300
µs,
duty cycle 1.5 %
2/7
BUV298AV
Safe Operating Areas
Thermal Impedance
Derating Curve
Collector Emitter Voltage Versus
Base Emitter Resistance
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
3/7
BUV298AV
Reverse Biased SOA
Forward Biased SOA
Reverse Biased AOA
Forward Biased AOA
Switching Times Inductive Load
Switching Times Inductive Load Versus
Temperature
4/7
BUV298AV
Dc Current Gain
Turn-on Switching Test Circuit
(1) Fast electronics switch
(2) Non-inductive load
Turn-on Switching Waveforms
Turn-off Switching Test Circuit
Turn-off Switching Waveforms
(1) Fast electronic switch
(3) Fast recovery rectifier
(2) Non-inductive load
5/7
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