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BUT30V_03

Description
100 A, 125 V, NPN, Si, POWER TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size224KB,7 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Download Datasheet Parametric View All

BUT30V_03 Overview

100 A, 125 V, NPN, Si, POWER TRANSISTOR

BUT30V_03 Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityNPN
Maximum collector current100 A
Maximum Collector-Emitter Voltage125 V
Processing package descriptionISOTOP-3
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRECTANGULAR
Package SizeFLANGE MOUNT
Terminal formUNSPECIFIED
terminal coatingNOT SPECIFIED
Terminal locationUPPER
Packaging MaterialsUNSPECIFIED
structureSINGLE
Shell connectionISOLATED
Number of components1
transistor applicationsSWITCHING
Transistor component materialsSILICON
Transistor typeGENERAL PURPOSE POWER
®
BUT30V
NPN TRANSISTOR POWER MODULE
s
s
s
s
s
s
NPN TRANSISTOR
HIGH CURRENT POWER BIPOLAR MODULE
VERY LOW R
th
JUNCTION CASE
SPECIFIED ACCIDENTAL OVERLOAD
AREAS
FULLY INSULATED PACKAGE (U.L.
COMPLIANT) FOR EASY MOUNTING
LOW INTERNAL PARASITIC INDUCTANCE
Pin 4 not connected
APPLICATIONS:
s
MOTOR CONTROL
s
SMPS & UPS
s
WELDING EQUIPMENT
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEV
V
CEO(sus)
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
V
isol
T
stg
T
j
Parameter
Collector-Emitter Voltage (V
BE
= -5 V)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (t
p
= 10 ms)
Base Current
Base Peak Current (t
p
= 10 ms)
Total Dissipation at T
c
= 25
o
C
Insulation Withstand Voltage (RMS) from All
Four Terminals to External Heatsink
Storage Temperature
Max. Operating Junction Temperature
Value
200
125
7
100
150
20
30
250
2500
-55 to 150
150
Unit
V
V
V
A
A
A
A
W
o
o
C
C
February 2003
1/7
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