®
BUT100
HIGH POWER NPN SILICON TRANSISTOR
s
s
s
s
s
STMicroelectronics PREFERRED
SALESTYPE
NPN TRANSISTOR
HIGH CURRENT CAPABILITY
FAST SWITCHING SPEED
HIGH RUGGEDNESS
APPLICATION
s
MOTOR CONTROL
s
UNINTERRUPTABLE POWER SUPPLY
DESCRIPTION
The BUT100 is a Multiepitaxial Planar NPN
Transistor in TO-3 package. It is intended for use
in high frequency and efficency converters,
switching regulators and motor control.
1
2
TO-3
(version " S ")
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEV
V
CEO
V
EBO
I
E
I
EM
I
B
I
BM
P
tot
T
stg
T
j
Parameter
Collector-Emitter Voltage (V
BE
= -1.5V)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Emitter Current
Emitter Peak Current
Base Current
Base Peak Current
Total Dissipation at T
c
< 25 C
Storage Temperature
Max. Operating Junction Temperature
o
Value
200
125
7
50
150
10
30
300
-65 to 200
200
Unit
V
V
V
A
A
A
A
W
o
o
C
C
February 2003
1/4
BUT100
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case
Max
0.58
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
I
CER
I
CEV
I
EBO
Parameter
Collector Cut-off
Current (R
BE
= 5Ω)
Collector Cut-off
Current (V
BE
= -1.5V)
Emitter Cut-off Current
(I
C
= 0)
Test Conditions
V
CE
= V
CEV
V
CE
= V
CEV
V
CE
= V
CEV
V
CE
= V
CEV
V
EB
= 5 V
I
C
= 0.2 A
L = 25mH
125
T
C
= 100 C
T
C
= 100 C
o
o
Min.
Typ.
Max.
1
5
1
4
1
Unit
mA
mA
mA
mA
mA
V
V
CEO(sus)
∗
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
V
EBO
V
CE(sat)
∗
Emitter-Base Voltage
(I
C
= 0)
Collector-Emitter
Saturation Voltage
I
E
= 50mA
I
C
I
C
I
C
I
C
I
C
I
C
I
C
I
C
=
=
=
=
=
=
=
=
50A
100A
50A
100A
50A
100A
50A
100A
I
B
I
B
I
B
I
B
I
B
I
B
I
B
I
B
=
=
=
=
=
=
=
=
2.5A
10A
2.5A
10A
2.5A
10A
2.5A
10A
7
0.9
0.9
1.2
1.5
1.4
2
1.4
2.1
180
V
V
V
V
V
V
V
V
V
A/µs
T
c
= 100
o
C
T
c
= 100
o
C
V
BE(sat)
∗
Base-Emitter
Saturation Voltage
T
c
= 100
o
C
T
c
= 100
o
C
di
c
/dt
Rate of Rise of
on-state Collector
Current
INDUCTIVE LOAD
Storage time
Fall Time
Crossover Time
Maximum Collector
Emitter Voltage
without Snubber
V
CC
= 100V R
C
= 0
I
B1
= 5A
o
T
c
= 100 C
T
p
= 3µs
V
CC
= 90V
I
C
= 50A
V
BB
= - 5V
R
B2
= 1
Ω
V
CC
= 90V
VBB
= - 5V
L
C
= 30µH
T
c
= 125
o
C
V
clamp
= 125 V
I
B1
= 2.5A
L
C
= 80µH
T
c
= 100
o
C
I
CWoff =
150A
I
B1
= 10A
R
B2
= 1Ω
t
s
t
f
t
c
V
CEW
2
0.2
0.35
125
µs
µs
µs
V
∗
Pulsed: Pulse duration = 3µs, duty cycle = 2 %
2/4
BUT100
TO-3 (version S) MECHANICAL DATA
mm
MIN.
A
B
C
D
E
G
N
P
R
U
V
11.00
1.47
1.50
8.32
19.00
10.70
16.50
25.00
4.00
38.50
30.00
TYP.
MAX.
13.10
1.60
1.65
8.92
20.00
11.10
17.20
26.00
4.09
39.30
30.30
MIN.
0.433
0.058
0.059
0.327
0.748
0.421
0.649
0.984
0.157
1.515
1.187
inch
TYP.
MAX.
0.516
0.063
0.065
0.351
0.787
0.437
0.677
1.023
0.161
1.547
1.193
DIM.
P
G
A
D
C
U
V
O
N
R
B
P003O
3/4
E
BUT100
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2003 STMicroelectronics – Printed in Italy – All Rights Reserved
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