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BS616UV1010EC10

Description
Ultra Low Power CMOS SRAM 64K X 16 bit
File Size207KB,11 Pages
ManufacturerBSI
Websitehttp://www.brilliancesemi.com/
Download Datasheet View All

BS616UV1010EC10 Overview

Ultra Low Power CMOS SRAM 64K X 16 bit

Ultra Low Power CMOS SRAM
64K X 16 bit
Pb-Free and Green package materials are compliant to RoHS
BS616UV1010
n
FEATURES
Ÿ
Wide V
CC
low operation voltage : 1.9V ~ 3.6V
Ÿ
Ultra low power consumption :
V
CC
= 2.0V
Operation current : 15mA (Max.) at 100ns
1.0mA (Max.) at 1MHz
Standby current : 0.01uA (Typ.) at 25
O
C
V
CC
= 3.0V
Operation current : 20mA (Max.) at 100ns
2.0mA (Max.) at 1MHz
Standby current : 0.02uA (Typ.) at 25
O
C
Ÿ
High speed access time :
-10
100ns (Max.)
Ÿ
Automatic power down when chip is deselected
Ÿ
Easy expansion with CE and OE options
Ÿ
I/O Configuration x8/x16 selectable by LB and UB pin.
Ÿ
Three state outputs and TTL compatible
Ÿ
Fully static operation
Ÿ
Data retention supply voltage as low as 1.5V
n
DESCRIPTION
The BS616UV1010 is a high performance, ultra low power CMOS
Static Random Access Memory organized as 65,536 by 16 bits and
operates form a wide range of 1.9V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both
high speed and low power features with typical CMOS standby
current of 0.01uA at 2.0V/25
O
C and maximum access time of 100ns
at 2.0V/85
O
C.
Easy memory expansion is provided by an active LOW chip enable
(CE) and active LOW output enable (OE) and three-state output
drivers.
The BS616UV1010 has an automatic power down feature, reducing
the power consumption significantly when chip is deselected.
The BS616UV1010 is available in DICE form, JEDEC standard
44-pin TSOP II and 48-ball BGA package.
n
POWER CONSUMPTION
POWER DISSIPATION
PRODUCT
FAMILY
BS616UV1010DC
BS616UV1010AC
BS616UV1010EC
BS616UV1010AI
BS616UV1010EI
Industrial
-40
O
C to +85
O
C
1.5uA
1.0uA
2.0mA
20mA
1.0mA
15mA
Commercial
+0
O
C to +70
O
C
1.0uA
0.5uA
1.5mA
18mA
0.8mA
13mA
OPERATING
TEMPERATURE
STANDBY
(I
CCSB1
, Max)
Operating
(I
CC
, Max)
PKG TYPE
V
CC
=2.0V
f
Max.
V
CC
=3.0V
V
CC
=2.0V
V
CC
=3.0V
1MHz
f
Max.
1MHz
DICE
BGA-48-0608
TSOP II-44
BGA-48-0608
TSOP II-44
n
PIN CONFIGURATIONS
A4
A3
A2
A1
A0
CE
DQ0
DQ1
DQ2
DQ3
VCC
VSS
DQ4
DQ5
DQ6
DQ7
WE
A15
A14
A13
A12
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A5
A6
A7
OE
UB
LB
DQ15
DQ14
DQ13
DQ12
VSS
VCC
DQ11
DQ10
DQ9
DQ8
NC
A8
A9
A10
A11
NC
n
BLOCK DIAGRAM
A8
A13
A15
A14
A12
A7
A6
A5
A4
2048
DQ0
.
.
.
.
.
.
DQ15
16
.
.
.
.
.
.
Data
Input
Buffer
16
128
Column Decoder
7
Control
Address Input Buffer
16
Column I/O
Write Driver
Sense Amp
Address
Input
Buffer
9
Row
Decoder
512 x 2048
512
Memory Array
BS616UV1010EC
BS616UV1010EI
16
1
A
B
C
D
E
F
G
H
LB
D8
D9
VSS
VCC
D14
D15
NC
2
OE
UB
D10
D11
D12
D13
NC
A8
3
A0
A3
A5
NC
NC
A14
A12
A9
4
A1
A4
A6
A7
NC
A15
A13
A10
5
A2
CE
D1
D3
D4
D5
WE
A11
6
NC
D0
D2
VCC
VSS
D6
D7
NC
Data
Output
Buffer
CE
WE
OE
UB
LB
V
CC
V
SS
A11 A9
A3
A2
A1
A0 A10
48-ball BGA top view
Brilliance Semiconductor, Inc.
reserves the right to change products and specifications without notice.
R0201-BS616UV1010
1
Revision 2.6
May.
2006
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