ZXMN10A08DN8
100V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
(BR)DSS
= 100V; R
DS(ON)
= 0.25
DESCRIPTION
I
D
= 2.1A
This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.
SO8
FEATURES
•
Low on-resistance
•
Fast switching speed
•
Low threshold
•
Low gate drive
•
Low profile SOIC package
APPLICATIONS
•
DC - DC converters
•
Power management functions
•
Disconnect switches
•
Motor control
ORDERING INFORMATION
DEVICE
ZXMN10A08DN8TA
ZXMN10A08DN8TC
REEL
SIZE
7”
13”
TAPE
WIDTH
12mm
12mm
QUANTITY
PER REEL
500 units
2,500 units
PINOUT
DEVICE MARKING
•
ZXMN
10A08D
Top View
ISSUE 4 - JANUARY 2005
1
SEMICONDUCTORS
ZXMN10A08DN8
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain-source voltage
Gate source voltage
Continuous drain current V
GS
=10V; T
A
=25°C
(b)
V
GS
=10V; T
A
=70°C
(b)
V
GS
=10V; T
A
=25°C
(a)
Pulsed drain current
(c)
Continuous source current (body diode)
(b)
Pulsed source current (body diode)
Power dissipation at T
A
=25°C
Linear derating factor
(a)
(c)
SYMBOL
V
DSS
V
GS
I
D
LIMIT
100
20
2.1
1.7
1.6
9
2.6
9
1.25
10
1.8
14.5
-55 to +150
UNIT
V
V
A
I
DM
I
S
I
SM
P
D
P
D
T
j
:T
stg
A
A
A
W
mW/°C
W
mW/°C
°C
Power dissipation at T
A
=25°C
(b)
Linear derating factor
Operating and storage temperature range
THERMAL RESISTANCE
PARAMETER
Junction to ambient (a)
Junction to ambient (b)
SYMBOL
R
θJA
R
θJA
VALUE
100
69
UNIT
°C/W
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300 s - pulse width limited by maximum junction temperature. Refer to
Transient Thermal Impedance graph
ISSUE 4 - JANUARY 2005
SEMICONDUCTORS
2
ZXMN10A08DN8
TYPICAL CHARACTERISTICS
ISSUE 4 - JANUARY 2005
3
SEMICONDUCTORS
ZXMN10A08DN8
ELECTRICAL CHARACTERISTICS
(at T
A
= 25°C unless otherwise stated).
PARAMETER
STATIC
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage
Gate-source threshold voltage
Static drain-source on-state resistance
(1)
Forward transconductance
(1)(3)
DYNAMIC
(3)
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS.
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
g
Q
gs
Q
gd
V
SD
t
rr
100
0.5
100
2.0
0.25
0.30
5.0
V
A
nA
V
I
D
=250 A, V
GS
=0V
V
DS
=100V, V
GS
=0V
V
GS
= 20V, V
DS
=0V
I =250 A, V
DS
= V
GS
D
V
GS
=10V, I
D
=3.2A
V
GS
=6V, I
D
=2.6A
S
V
DS
=15V,I
D
=3.2A
Input capacitance
Output capacitance
Reverse transfer capacitance
SWITCHING
(2) (3)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate charge
Total gate charge
Gate-source charge
Gate-drain charge
SOURCE-DRAIN DIODE
Diode forward voltage
(1)
Reverse recovery time
(3)
Reverse recovery charge
(3)
405
28.2
14.2
pF
pF
pF
V
DS
=50 V, V
GS
=0V,
f=1MHz
3.4
2.2
8
3.2
4.2
7.7
1.8
2.1
ns
ns
ns
ns
nC
nC
nC
nC
V
DS
=50V,V
GS
=10V,
I
D
=1.2A
V
DS
=50V,V
GS
=5V,
I
D
=1.2A
V
DD
=30V, I
D
=1.2A
R
G
≅6.0
, V
GS
=10V
0.87
27
32
0.95
V
ns
nC
T
J
=25°C, I
S
=3.2A,
V
GS
=0V
T
J
=25°C, I
F
=1.2A,
di/dt= 100A/ s
Q
rr
NOTES:
(1) Measured under pulsed conditions. Width
=
300µs. Duty cycle
≤
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 4 - JANUARY 2005
SEMICONDUCTORS
4
ZXMN10A08DN8
TYPICAL CHARACTERISTICS
ISSUE 4 - JANUARY 2005
5
SEMICONDUCTORS
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