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ZXMN10A08DN8TA

Description
2.1 A, 100 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size170KB,7 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
Environmental Compliance
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ZXMN10A08DN8TA Overview

2.1 A, 100 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET

ZXMN10A08DN8TA Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerZetex Semiconductors
package instructionSO-8
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (Abs) (ID)2.1 A
Maximum drain current (ID)2.1 A
Maximum drain-source on-resistance0.25 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G8
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals8
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)1.8 W
Maximum pulsed drain current (IDM)9 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
ZXMN10A08DN8
100V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
(BR)DSS
= 100V; R
DS(ON)
= 0.25
DESCRIPTION
I
D
= 2.1A
This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.
SO8
FEATURES
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
APPLICATIONS
DC - DC converters
Power management functions
Disconnect switches
Motor control
ORDERING INFORMATION
DEVICE
ZXMN10A08DN8TA
ZXMN10A08DN8TC
REEL
SIZE
7”
13”
TAPE
WIDTH
12mm
12mm
QUANTITY
PER REEL
500 units
2,500 units
PINOUT
DEVICE MARKING
ZXMN
10A08D
Top View
ISSUE 4 - JANUARY 2005
1
SEMICONDUCTORS

ZXMN10A08DN8TA Related Products

ZXMN10A08DN8TA ZXMN10A08DN8
Description 2.1 A, 100 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET 2.1 A, 100 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET
Number of components 1 1
Number of terminals 8 8
surface mount YES Yes
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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