ZXT1M322
MPPS™ Miniature Package Power Solutions
12V PNP LOW SATURATION SWITCHING TRANSISTOR
SUMMARY
V
CEO
= -12V; R
SAT
= 60m ; I
C
= -4A
DESCRIPTION
Packaged in the innovative 2mm x 2mm MLP (Micro Leaded Package) outline,
this new 4
th
generation low saturation transistor offers extremely low on state
losses making it ideal for use in DC-DC circuits and various driving and power
management functions.
Additionally users will also gain several other
key benefits:
Performance capability equivalent to much larger packages
Improved circuit efficiency & power levels
PCB area and device placement savings
Lower package height (nom 0.9mm)
2mm x 2mm MLP
(single die)
C
FEATURES
•
Low Equivalent On Resistance
•
Extremely Low Saturation Voltage
(-140mV@ -1A)
•
hFE specified up to -10A
•
IC= -4A Continuous Collector Current
•
2mm x 2mm MLP
B
E
APPLICATIONS
•
DC - DC Converters (FET Driving)
•
Charging Circuits
•
Power switches
•
Motor control
PINOUT
ORDERING INFORMATION
DEVICE
ZXT1M322TA
ZXT1M322TC
REEL
7
13
TAPE
WIDTH
8mm
8mm
QUANTITY
PER REEL
3000
10000
2mm x 2mm Single MLP
underside view
DEVICE MARKING
S1
ISSUE 2 - JUNE 2002
1
ZXT1M322
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current (a)
Base Current
Power Dissipation at TA=25°C (a)
Linear Derating Factor
Power Dissipation at TA=25°C (b)
Linear Derating Factor
Power Dissipation at TA=25°C (d)
Linear Derating Factor
Power Dissipation at TA=25°C (e)
Linear Derating Factor
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
D
LIMIT
-20
-12
-7.5
-12
-4
-1000
1.5
12
2.45
19.6
1
8
3
24
-55 to +150
UNIT
V
V
V
A
A
mA
W
mW/°C
W
mW/°C
W
mW/°C
W
mW/°C
°C
P
D
P
D
P
D
T
j
:T
stg
THERMAL RESISTANCE
PARAMETER
Junction to Ambient (a)
Junction to Ambient (b)
Junction to Ambient (d)
Junction to Ambient (e)
NOTES
(a) For a single device surface mounted on 10sq cm1oz copper on FR4 PCB in still air conditions
with all exposed pads attached.
(b) For a single device surface mounted on 10sq cm1oz copper on FR4 PCB in still air conditions measured at t 5 secs
with all exposed pads
attached.
(c) Repetitive rating - pulse width limited by max junction temperature. refer to Transient Thermal Impedance graph.
(d) For a single device surface mounted on 10sq cm1oz copper on FR4 PCB in still air conditions
with minimal lead connections only.
(e) For a single device surface mounted on 65sq cm2oz copper on FR4 PCB in still air conditions
with all exposed pads attached.
(f) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device, as shown in the
package dimensions data. The thermal resistance for a device mounted on 1.5mm thick FR4 board using minimum copper of 1oz weight is
Rth=300°C/W giving a power rating of Ptot=420mW.
SYMBOL
R
θJA
R
θJA
R
θJA
R
θJA
VALUE
83
51
125
42
UNIT
°C/W
°C/W
°C/W
°C/W
ISSUE 2 - JUNE 2002
2
ZXT1M322
CHARACTERISTICS
3.5
I
C
Collector Current (A)
V
CE(SAT)
Limited
Max Power Dissipation (W)
10
3.0
2.5
2oz Cu
2.0
1.5
1.0
1oz Cu
Note: a
Note: e
T
amb
=25°C
1
DC
1s
100ms
0.1
10ms
1ms
100us
Single Pulse, T
amb
=25°C
0.5
0.0
0
25
50
75
100
125
150
0.01
0.1
1
10
V
CE
Collector-Emitter Voltage (V)
Temperature (°C)
Safe Operating Area
Thermal Resistance (°C/W)
Thermal Resistance (°C/W)
80
60
D=0.5
Derating Curve
225
200
175
150
125
100
75
50
25
0
0.1
40
20
D=0.2
Single Pulse
D=0.05
D=0.1
1oz copper
2oz copper
0
100µ 1m
10m 100m
1
10
100
1k
1
10
100
Pulse Width (s)
Board Cu Area (sqcm)
Transient Thermal Impedance
3.5
3.0
T
amb
=25°C
T
j max
=150°C
Continuous
2oz copper
Thermal Resistance v Board Area
P
D
Dissipation (W)
2.5
2.0
1.5
1.0
0.5
0.0
0.1
1oz copper
1
10
100
Board Cu Area (sqcm)
Power Dissipation v Board Area
ISSUE 2 - JUNE 2002
3
ZXT1M322
ELECTRICAL CHARACTERISTICS
(at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base Breakdown
Voltage
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
I
CES
V
CE(sat)
-10
-100
-100
-195
-240
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Static Forward Current Transfer
Ratio
V
BE(sat)
V
BE(on)
h
FE
300
300
180
60
45
100
-0.97
-0.87
475
450
275
100
70
110
21
70
130
30
MHz
pF
ns
ns
MIN.
-20
-12
-7.5
TYP.
-35
-25
-8.5
-25
-25
-25
-17
-140
-150
-300
-300
-1.05
-0.95
MAX.
UNIT
V
V
V
nA
nA
nA
mV
mV
mV
mV
mV
V
V
CONDITIONS.
I
C
=-100 A
I
C
=-10mA*
I
E
=-100 A
V
CB
=-16V
V
EB
=-6V
V
CES
=-10V
I
C
=-0.1A, I
B
=-10mA*
I
C
=-1A, I
B
=-10mA*
I
C
=-1.5A, I
B
=-50mA*
I
C
=-3A, I
B
=-50mA*
I
C
=-4A, I
B
=-150mA*
I
C
=-4A, I
B
=-150mA*
I
C
=-4A, V
CE
=-2V*
I
C
=-10mA, V
CE
=-2V*
I
C
=-0.1A, V
CE
=-2V*
I
C
=-2.5A, V
CE
=-2V*
I
C
=-8A, V
CE
=-2V*
I
C
=-10A, V
CE
=-2V*
I
C
=-50mA, V
CE
=-10V
f=100MHz
V
CB
=-10V, f=1MHz
V
CC
=-6V, I
C
=-2A
I
B1
=I
B2
=-50mA
Transition Frequency
Output Capacitance
Turn-On Time
Turn-Off Time
f
T
C
obo
t
(on)
t
(off)
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle
≤
2%
ISSUE 2 - JUNE 2002
4
ZXT1M322
CHARACTERISTICS
0.25
Tamb=25°C
I
C
/I
B
=50
100m
0.20
V
CE(SAT)
(V)
V
CE(SAT)
(V)
I
C
/I
B
=100
0.15
0.10
0.05
100°C
25°C
-55°C
10m
I
C
/I
B
=50
I
C
/I
B
=10
1m
1m
I
C
Collector Current (A)
10m
100m
1
10
0.00
1m
V
CE(SAT)
v I
C
I
C
Collector Current (A)
10m
100m
1
10
V
CE(SAT)
v I
C
1.4
Normalised Gain
V
BE(SAT)
(V)
1.0
0.8
0.6
0.4
0.2
0.0
1m
10m
100m
1
10
-55°C
25°C
450
360
270
180
90
0
Typical Gain (h
FE
)
1.2
100°C
V
CE
=2V
630
540
1.0
0.8
I
C
/I
B
=50
-55°C
0.6
0.4
1m
25°C
100°C
I
C
Collector Current (A)
h
FE
v I
C
I
C
Collector Current (A)
10m
100m
1
10
V
BE(SAT)
v I
C
1.0
0.8
V
CE
=2V
V
BE(ON)
(V)
-55°C
0.6
25°C
0.4
0.2
1m
100°C
I
C
Collector Current (A)
10m
100m
1
10
V
BE(ON)
v I
C
ISSUE 2 - JUNE 2002
5
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