PD-96958
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (Low-Ohmic TO-254AA)
Product Summary
Part Number Radiation Level R
DS(on)
I
D
IRHMS67164 100K Rads (Si) 0.019Ω 45A*
IRHMS63164 300K Rads (Si) 0.019Ω 45A*
IRHMS67164
150V, N-CHANNEL
TECHNOLOGY
International Rectifier’s R6
TM
technology provides
superior power MOSFETs for space applications.
These devices have improved immunity to Single
Event Effect (SEE) and have been characterized for
useful performance with Linear Energy Transfer
(LET) up to 90MeV/(mg/cm
2
).
Their combination of very low
RDS(on)
and faster
switching times reduces power loss and increases
power density in today’s high speed switching
applications such as DC-DC converters and motor
controllers. These devices retain all of the well
established advantages of MOSFETs such as voltage
control, ease of paralleling and temperature stability
of electrical parameters.
Low-Ohmic
TO-254AA
Features:
n
n
n
n
n
n
n
n
n
n
Low R
DS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Eyelets
Electrically Isolated
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C
Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Pulsed Drain Current
À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Á
Avalanche Current
À
Repetitive Avalanche Energy
À
Peak Diode Recovery dv/dt
Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
* Current is limited by package
For footnotes refer to the last page
45*
44
180
208
1.67
±20
353
45
20.8
8.2
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
g
300 (0.063 in. /1.6 mm from case for 10s)
9.3 (Typical)
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1
12/22/05
IRHMS67164
Pre-Irradiation
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
∆BV
DSS /∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
g fs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
150
—
—
2.0
49
—
—
—
—
—
—
—
—
—
—
—
—
Typ Max Units
—
0.18
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
—
—
0.019
4.0
—
10
25
100
-100
230
55
90
35
120
85
25
—
V
V/°C
Ω
V
S( )
µA
Ω
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
VGS = 12V, ID = 44A
Ã
VDS = VGS, ID = 1.0mA
VDS = 15V, IDS = 44A
Ã
VDS = 120V ,VGS = 0V
VDS = 120V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 45A
VDS = 75V
VDD = 75V, ID = 45A
VGS =12V, RG = 2.35Ω
IGSS
IGSS
Qg
Q gs
Q gd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
nA
nC
ns
nH
Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in.
from package) with Source wires internally
bonded from Source Pin to Drain Pad
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Gate Resistance
—
—
—
—
7380
1140
28
0.52
—
—
—
—
pF
Ω
VGS = 0V, VDS = 25V
f = 1.0MHz
f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
IS
ISM
VSD
trr
Q RR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min Typ Max Units
—
—
—
—
—
—
—
—
—
—
45*
180
1.2
370
3.8
Test Conditions
A
V
ns
µC
T
j
= 25°C, IS = 45A, VGS = 0V
Ã
Tj = 25°C, IF = 45A, di/dt
≤
100A/µs
VDD
≤
50V
Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by package
Thermal Resistance
Parameter
RthJC
RthCS
RthJA
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Min Typ Max Units
—
—
—
— 0.60
0.21 —
—
48
°C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
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Radiation Characteristics
Pre-Irradiation
IRHMS67164
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
ÄÅ
Parameter
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
R
DS(on)
V
SD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Sourcee On-State
Resistance (Low Ohmic TO-254AA)
Diode Forward Voltage
Up to 300K Rads (Si)
Min
150
2.0
—
—
—
—
—
—
Max
Units
V
nA
µA
Ω
Ω
V
Test Conditions
V
GS
= 0V, I
D
= 1.0mA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20V
V
DS
= 120V, V
GS
= 0V
V
GS
= 12V, I
D
= 44A
V
GS
= 12V, I
D
= 44A
V
GS
= 0V, I
D
= 45A
—
4.0
100
-100
10
0.019
0.019
1.2
Part numbers IRHMS67164 and IRHMS63164
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Tables.
Tables for Single Event Effect Safe Operating Area
Ion Kr
LET = 39 MeV/(mg/cm2)
Energy = 312 MeV
Range = 39 µm
VGS Bias
VDS Bias
(Volts)
(Volts)
0
150
-5
150
-10
150
-15
150
-20
150
Ion Xe
LET = 59 MeV/(mg/cm2)
Energy = 825 MeV
Range = 66 µm
VGS Bias
VDS Bias
(Volts)
(Volts)
0
150
-5
150
-9
150
-10
140
-11
50
-15
40
180
150
120
VDS
90
60
30
0
0
-5
-10
VGS
-15
-20
Kr
Xe
Au
Ion Au
LET = 90 MeV/(mg/cm2)
Energy = 1480 MeV
Range = 80 µm
VGS Bias
VDS Bias
(Volts)
(Volts)
0
50
-5
50
-10
30
Fig a.
Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHMS67164
Pre-Irradiation
1000
ID, Drain-to-Source Current (A)
100
ID, Drain-to-Source Current (A)
VGS
TOP
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
1000
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
TOP
100
5.0V
10
10
5.0V
60µs PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
60µs PULSE WIDTH
Tj = 150°C
1
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance
3.0
ID = 45A
2.5
ID, Drain-to-Source Current (A)
100
T J = 150°C
2.0
T J = 25°C
10
(Normalized)
1.5
1.0
1
5
5.5
6
VDS = 50V
15
60µs PULSE WIDTH
6.5
7
7.5
8
0.5
VGS = 12V
0.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
4
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Pre-Irradiation
IRHMS67164
14000
12000
10000
8000
6000
4000
2000
0
1
VGS, Gate-to-Source Voltage (V)
100KHz
VGS = 0V,
f = 1 MHz
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
20
ID = 45A
16
VDS = 120V
VDS = 75V
VDS = 30V
C, Capacitance (pF)
Ciss
12
Coss
8
Crss
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
40
80
120
160
200
240
280
10
100
VDS, Drain-to-Source Voltage (V)
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
100µs
10
1ms
100
T J = 150°C
T J = 25°C
10
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1
Tc = 25°C
Tj = 150°C
Single Pulse
1
10
100
10ms
VGS = 0V
1.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VSD , Source-to-Drain Voltage (V)
0.1
1000
VDS , Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
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