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BC848C

Description
100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size171KB,4 Pages
ManufacturerETL [E-Tech Electronics LTD]
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BC848C Overview

100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR

BC848C Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityNPN
Maximum collector current0.1000 A
Maximum Collector-Emitter Voltage30 V
Processing package descriptionROHS COMPLIANT PACKAGE-3
Lead-freeYes
EU RoHS regulationsYes
China RoHS regulationsYes
stateACTIVE
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingMATTE TIN
Terminal locationDUAL
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE
Number of components1
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Transistor typeGENERAL PURPOSE SMALL SIGNAL
Minimum DC amplification factor420
Rated crossover frequency250 MHz
General Purpose Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Collector Current(Peak value)
Emitter Current(Peak value)
Base Current(Peak value)
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
CM
I
EM
I
BM
BC846
65
80
6.0
100
200
200
200
BC847
BC850
45
50
6.0
100
200
200
200
BC848
BC849
30
30
5.0
100
200
200
200
Unit
V
V
V
mAdc
mAdc
mAdc
mAdc
BC846ALT1,BLT1
BC847ALT1,BLT1
CLT1 thru
BC850BLT1,CLT1
3
1
2
SOLDERING CHARACTERISTICS
Characteristic
Solder Heat Resistance
Solderability
Symbol
265
240 to 265
Symbol
P
D
225
1.8
R
θ
JA
P
D
556
300
R
θ
JA
T
J
, T
stg
2.4
417
–55 to +150
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Unit
°C
°C
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Max
Unit
1
BASE
3
COLLECTOR
2
EMITTER
DEVICE MARKING
BC846ALT1 = 1A; BC846BLT1 = 1B; BC847ALT1 = 1E; BC847BLT1 = 1F;
BC847CLT1 = 1G; BC848ALT1 = 1J; BC848BLT1 = 1K; BC848CLT1 = 1L
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= 10 mA)
Collector–Emitter Breakdown Voltage
(I
C
= 10
µA,
V
EB
= 0)
Collector–Base Breakdown Voltage
(I
C
= 10
µA)
Emitter–Base Breakdown Voltage
(I
E
= 1.0
µA)
Collector Cutoff Current
BC846A,B
BC847A,B,C, BC850B,C
BC848A,B,C, BC849B,C
BC846A,B
BC847A,B,C, BC850B,C
BC848A,B,C, BC849B,C
BC846A,B
BC847A,B,C, BC850B,C
BC848A,B,C, BC849B,C
BC846A,B
BC847A,B,C
V
(BR)CEO
65
45
30
80
50
30
80
50
30
6.0
5.0
5.0
v
V
(BR)CES
v
V
(BR)CBO
v
BC848A,B,C, BC849B,C,
BC850B,C
(V
CB
= 30 V)
(V
CB
= 30 V, T
A
= 150°C)
V
(BR)EBO
I
CBO
15
5.0
nA
µA
1. FR–5 = 1.0 x 0.75 x 0.062 in
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
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