BC618
Darlington Transistors
NPN Silicon
Features
•
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Collector −Emitter Voltage
Collector −Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
Total Power Dissipation @ T
A
= 25°C
Derate above T
A
= 25°C
Total Power Dissipation @ T
A
= 25°C
Derate above T
A
= 25°C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
P
D
T
J
, T
stg
Value
55
80
12
1.0
625
5.0
1.5
12
−55 to +150
Unit
Vdc
Vdc
Vdc
Adc
mW
mW/°C
W
mW/°C
°C
12
http://onsemi.com
COLLECTOR 1
BASE
2
EMITTER 3
3
TO−92
CASE 29
STYLE 17
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Symbol
R
qJA
R
qJC
Max
200
83.3
Unit
°C/W
°C/W
BC
618
AYWW
G
G
MARKING DIAGRAM
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
BC618
BC618G
BC618RL1
BC618RL1G
Package
TO−92
TO−92
(Pb−Free)
TO−92
TO−92
(Pb−Free)
Shipping
†
5000 Units / Bulk
5000 Units / Bulk
2000 / Tape & Reel
2000 / Tape & Reel
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2006
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
BC618/D
1
January, 2006 − Rev. 3
BC618
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(I
C
= 10 mAdc, V
BE
= 0)
Collector −Base Breakdown Voltage
(I
C
= 100
mAdc,
I
E
= 0)
Emitter −Base Breakdown Voltage
(I
E
= 10
mAdc,
I
C
= 0)
Collector Cutoff Current
(V
CE
= 60 Vdc, V
BE
= 0)
Collector Cutoff Current
(V
CB
= 60 Vdc, I
E
= 0)
Emitter Cutoff Current
(V
EB
= 10 Vdc, I
C
= 0)
ON CHARACTERISTICS
DC Current Gain
(I
C
= 200 mA, I
B
= 0.2 mA)
Base −Emitter Saturation Voltage
(I
C
= 200 mA, I
B
= 0.2 mA)
DC Current Gain
(I
C
= 100
mA,
V
CE
= 5.0 Vdc)
(I
C
= 10 mA, V
CE
= 5.0 Vdc)
(I
C
= 200 mA, V
CE
= 5.0 Vdc)
(I
C
= 1.0 A, V
CE
= 5.0 Vdc)
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(I
C
= 500 mA, V
CE
= 5.0 Vdc, P = 100 MHz)
Output Capacitance
(V
CB
= 10 V, I
E
= 0, f = 1.0 MHz)
Input Capacitance
(V
EB
= 5.0 V, I
E
= 0, f = 1.0 MHz)
f
T
150
C
ob
−
C
ib
−
5.0
9.0
4.5
7.0
pF
−
−
pF
MHz
V
CE(sat)
−
V
BE(sat)
−
h
FE
2000
4000
10000
4000
−
−
−
−
−
−
50000
−
−
1.6
−
−
1.1
Vdc
Vdc
V
(BR)CEO
55
V
(BR)CBO
80
V
(BR)EBO
12
I
CES
−
I
CBO
−
I
EBO
−
−
50
−
50
nAdc
−
50
nAdc
−
−
nAdc
−
−
Vdc
−
−
Vdc
Vdc
Symbol
Min
Typ
Max
Unit
R
S
i
n
e
n
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
http://onsemi.com
2
BC618
NOISE CHARACTERISTICS
(V
CE
= 5.0 Vdc, T
A
= 25°C)
500
200
100
BANDWIDTH = 1.0 Hz
R
S
≈
0
i n, NOISE CURRENT (pA)
2.0
BANDWIDTH = 1.0 Hz
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
10 20
100
mA
10
mA
en, NOISE VOLTAGE (nV)
I
C
= 1.0 mA
10
mA
50
100
mA
20
I
C
= 1.0 mA
10
5.0
10 20
50 100 200
500 1 k 2 k 5 k 10 k 20 k
f, FREQUENCY (Hz)
50 k 100 k
50 100 200
500 1 k 2 k 5 k 10 k 20 k
f, FREQUENCY (Hz)
50 k 100 k
Figure 2. Noise Voltage
Figure 3. Noise Current
VT, TOTAL WIDEBAND NOISE VOLTAGE (nV)
200
BANDWIDTH = 10 Hz TO 15.7 kHz
I
C
= 10
mA
14
BANDWIDTH = 10 Hz TO 15.7 kHz
12
NF, NOISE FIGURE (dB)
100
70
50
30
20
10
10
mA
8.0
6.0
4.0
2.0
I
C
= 1.0 mA
100
mA
100
mA
1.0 mA
10
1.0
2.0
5.0
10
20
50 100 200
R
S
, SOURCE RESISTANCE (kW)
500
1000
0
1.0
2.0
5.0
10
20
50 100 200
R
S
, SOURCE RESISTANCE (kW)
500
1000
Figure 4. Total Wideband Noise Voltage
Figure 5. Wideband Noise Figure
http://onsemi.com
3
BC618
SMALL−SIGNAL CHARACTERISTICS
20
T
J
= 25°C
|h fe |, SMALL−SIGNAL CURRENT GAIN
4.0
V
CE
= 5.0 V
f = 100 MHz
T
J
= 25°C
C, CAPACITANCE (pF)
10
7.0
5.0
2.0
C
ibo
C
obo
1.0
0.8
0.6
0.4
3.0
2.0
0.04
0.1
0.2 0.4
1.0 2.0 4.0
10
V
R
, REVERSE VOLTAGE (VOLTS)
20
40
0.2
0.5
1.0
2.0
0.5 10 20
50
100 200
I
C
, COLLECTOR CURRENT (mA)
500
Figure 6. Capacitance
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 7. High Frequency Current Gain
200 k
T
J
= 125°C
hFE , DC CURRENT GAIN
100 k
70 k
50 k
30 k
20 k
10 k
7.0 k
5.0 k
3.0 k
2.0 k
5.0 7.0
10
20 30
50 70 100
200 300
I
C
, COLLECTOR CURRENT (mA)
500
3.0
T
J
= 25°C
2.5
I
C
= 10 mA
50 mA
250 mA
500 mA
25°C
2.0
1.5
−55
°C
V
CE
= 5.0 V
1.0
0.5
0.1 0.2
0.5 1.0 2.0 5.0 10 20 50 100 200
I
B
, BASE CURRENT (mA)
500 1000
Figure 8. DC Current Gain
Figure 9. Collector Saturation Region
R
θ
V, TEMPERATURE COEFFICIENTS (mV/ C)
°
1.6
T
J
= 25°C
1.4
V, VOLTAGE (VOLTS)
V
BE(sat)
@ I
C
/I
B
= 1000
1.2
V
BE(on)
@ V
CE
= 5.0 V
1.0
−1.0
−2.0
−3.0
*APPLIES FOR I
C
/I
B
≤
h
FE
/3.0
*R
qVC
FOR V
CE(sat)
25°C TO 125°C
−55
°C
TO 25°C
25°C TO 125°C
−4.0
q
VB
FOR V
BE
−5.0
−6.0
5.0 7.0 10
−55
°C
TO 25°C
0.8
0.6
V
CE(sat)
@ I
C
/I
B
= 1000
5.0 7.0
10
20 30
50 70 100 200 300
I
C
, COLLECTOR CURRENT (mA)
500
20 30
50 70 100
200 300
I
C
, COLLECTOR CURRENT (mA)
500
Figure 10. “On” Voltages
Figure 11. Temperature Coefficients
http://onsemi.com
4
BC618
1.0
0.7
0.5
0.3
0.2
0.1
0.1
0.07
0.05
0.03
0.02
0.01
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
0.05
SINGLE PULSE
D = 0.5
0.2
( ),
RESISTANCE (NORMALIZED)
SINGLE PULSE
Z
qJC(t)
= r(t)
•
R
qJC
T
J(pk)
− T
C
= P
(pk)
Z
qJC(t)
Z
qJA(t)
= r(t)
•
R
qJA
T
J(pk)
− T
A
= P
(pk)
Z
qJA(t)
200
500
1.0 k
2.0 k
5.0 k
10 k
t, TIME (ms)
Figure 12. Thermal Response
FIGURE A
1.0 ms
T
C
= 25°C
1.0 s
100
ms
t
P
P
P
P
P
IC, COLLECTOR CURRENT (mA)
1.0 k
700
500
300
200
100
70
50
30
20
10
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
0.4 0.6
T
A
= 25°C
t
1
1/f
t
DUTY CYCLE
+
t1 f
+
1
tP
PEAK PULSE POWER = P
P
1.0
2.0
4.0 6.0
10
20
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
40
Figure 13. Active Region Safe Operating Area
Design Note: Use of Transient Thermal
Resistance Data
http://onsemi.com
5
京公网安备 11010802033920号
EEWORLD
