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BC337-16RL1G

Description
800 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
CategoryDiscrete semiconductor    The transistor   
File Size63KB,5 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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BC337-16RL1G Overview

800 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92

BC337-16RL1G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerON Semiconductor
Parts packaging codeTO-92
package instructionLEAD FREE, CASE 29-11, TO-226, 3 PIN
Contacts3
Manufacturer packaging codeCASE 29-11
Reach Compliance Codeunknow
ECCN codeEAR99
Factory Lead Time1 week
Other featuresEUROPEAN PART NUMBER
Maximum collector current (IC)0.8 A
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)1.5 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperature40
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)210 MHz
BC337, BC337−16,
BC337−25, BC337−40,
BC338−25
Amplifier Transistors
NPN Silicon
http://onsemi.com
Features
COLLECTOR
1
2
BASE
3
EMITTER
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Collector − Emitter Voltage
Collector − Base Voltage
Emitter − Base Voltage
Collector Current − Continuous
Total Device Dissipation
@ T
A
= 25°C
Derate above 25°C
Total Device Dissipation
@ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
625
5.0
P
D
1.5
12
T
J
, T
stg
−55 to +150
BC337 BC338
45
50
5.0
800
25
30
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
W
mW/°C
°C
1
2
3
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
TO−92
CASE 29
STYLE 17
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Ambient
Thermal Resistance,
Junction−to−Case
Symbol
R
qJA
R
qJC
Max
200
83.3
Unit
°C/W
°C/W
MARKING
DIAGRAM
BC33
x−xx
AYWW
G
G
BC33x−xx = Device Code
(Refer to page 4)
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
©
Semiconductor Components Industries, LLC, 2005
1
September, 2005 − Rev. 5
Publication Order Number:
BC337/D

BC337-16RL1G Related Products

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Description 800 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 800 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 800 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 800 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 800 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 800 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 NPN general purpose transistor
Is it Rohs certified? conform to incompatible - incompatible incompatible conform to -
Maker ON Semiconductor ON Semiconductor - ON Semiconductor - ON Semiconductor -
Parts packaging code TO-92 - - TO-92 TO-92 TO-92 -
package instruction LEAD FREE, CASE 29-11, TO-226, 3 PIN CYLINDRICAL, O-PBCY-T3 - CASE 29-11, TO-226, 3 PIN CASE 29-11, TO-226, 3 PIN LEAD FREE, CASE 29-11, TO-226, 3 PIN -
Contacts 3 - - 3 3 3 -
Manufacturer packaging code CASE 29-11 - - CASE 29-11 CASE 29-11 CASE 29-11 -
Reach Compliance Code unknow not_compliant - _compli _compli compli -
ECCN code EAR99 - - EAR99 EAR99 EAR99 -
Maximum collector current (IC) 0.8 A 0.8 A - 0.8 A 0.8 A 0.8 A -
Collector-emitter maximum voltage 45 V 25 V - 45 V 45 V 45 V -
Configuration SINGLE SINGLE - SINGLE SINGLE SINGLE -
Minimum DC current gain (hFE) 100 160 - 100 250 100 -
JEDEC-95 code TO-92 TO-92 - TO-92 TO-92 TO-92 -
JESD-30 code O-PBCY-T3 O-PBCY-T3 - O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 -
JESD-609 code e1 e0 - e0 e0 e3 -
Number of components 1 1 1 1 1 1 -
Number of terminals 3 3 3 3 3 3 -
Maximum operating temperature 150 °C 150 °C - 150 °C 150 °C 150 °C -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY -
Package shape ROUND ROUND - ROUND ROUND ROUND -
Package form CYLINDRICAL CYLINDRICAL - CYLINDRICAL CYLINDRICAL CYLINDRICAL -
Peak Reflow Temperature (Celsius) 260 225 - 240 240 NOT SPECIFIED -
Polarity/channel type NPN NPN - NPN NPN NPN -
Maximum power dissipation(Abs) 1.5 W 0.625 W - 0.625 W 0.625 W 1.5 W -
Certification status Not Qualified Not Qualified - Not Qualified Not Qualified Not Qualified -
surface mount NO NO - NO NO NO -
Terminal surface Tin/Silver/Copper (Sn/Ag/Cu) Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Matte Tin (Sn) -
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-hole THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE -
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM -
Maximum time at peak reflow temperature 40 NOT SPECIFIED - 30 30 NOT SPECIFIED -
transistor applications AMPLIFIER AMPLIFIER amplifier AMPLIFIER AMPLIFIER AMPLIFIER -
Transistor component materials SILICON SILICON silicon SILICON SILICON SILICON -
Nominal transition frequency (fT) 210 MHz 210 MHz - 210 MHz 210 MHz 210 MHz -
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