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BC337-16G

Description
800 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
CategoryDiscrete semiconductor    The transistor   
File Size63KB,5 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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BC337-16G Overview

800 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92

BC337-16G Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerON Semiconductor
Parts packaging codeTO-92
package instructionLEAD FREE, CASE 29-11, TO-226, 3 PIN
Contacts3
Manufacturer packaging codeCASE 29-11
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)0.8 A
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)1.5 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)210 MHz
BC337, BC337−16,
BC337−25, BC337−40,
BC338−25
Amplifier Transistors
NPN Silicon
http://onsemi.com
Features
COLLECTOR
1
2
BASE
3
EMITTER
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Collector − Emitter Voltage
Collector − Base Voltage
Emitter − Base Voltage
Collector Current − Continuous
Total Device Dissipation
@ T
A
= 25°C
Derate above 25°C
Total Device Dissipation
@ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
625
5.0
P
D
1.5
12
T
J
, T
stg
−55 to +150
BC337 BC338
45
50
5.0
800
25
30
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
W
mW/°C
°C
1
2
3
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
TO−92
CASE 29
STYLE 17
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Ambient
Thermal Resistance,
Junction−to−Case
Symbol
R
qJA
R
qJC
Max
200
83.3
Unit
°C/W
°C/W
MARKING
DIAGRAM
BC33
x−xx
AYWW
G
G
BC33x−xx = Device Code
(Refer to page 4)
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
©
Semiconductor Components Industries, LLC, 2005
1
September, 2005 − Rev. 5
Publication Order Number:
BC337/D

BC337-16G Related Products

BC337-16G BC338-25 BC337_05 BC337ZL1 BC337-40ZL1 BC337-16RL1G BC337-16
Description 800 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 800 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 800 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 800 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 800 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 800 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 NPN general purpose transistor
Is it Rohs certified? conform to incompatible - incompatible incompatible conform to -
Maker ON Semiconductor ON Semiconductor - ON Semiconductor - ON Semiconductor -
Parts packaging code TO-92 - - TO-92 TO-92 TO-92 -
package instruction LEAD FREE, CASE 29-11, TO-226, 3 PIN CYLINDRICAL, O-PBCY-T3 - CASE 29-11, TO-226, 3 PIN CASE 29-11, TO-226, 3 PIN LEAD FREE, CASE 29-11, TO-226, 3 PIN -
Contacts 3 - - 3 3 3 -
Manufacturer packaging code CASE 29-11 - - CASE 29-11 CASE 29-11 CASE 29-11 -
Reach Compliance Code compli not_compliant - _compli _compli unknow -
ECCN code EAR99 - - EAR99 EAR99 EAR99 -
Maximum collector current (IC) 0.8 A 0.8 A - 0.8 A 0.8 A 0.8 A -
Collector-emitter maximum voltage 45 V 25 V - 45 V 45 V 45 V -
Configuration SINGLE SINGLE - SINGLE SINGLE SINGLE -
Minimum DC current gain (hFE) 100 160 - 100 250 100 -
JEDEC-95 code TO-92 TO-92 - TO-92 TO-92 TO-92 -
JESD-30 code O-PBCY-T3 O-PBCY-T3 - O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 -
JESD-609 code e3 e0 - e0 e0 e1 -
Number of components 1 1 1 1 1 1 -
Number of terminals 3 3 3 3 3 3 -
Maximum operating temperature 150 °C 150 °C - 150 °C 150 °C 150 °C -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY -
Package shape ROUND ROUND - ROUND ROUND ROUND -
Package form CYLINDRICAL CYLINDRICAL - CYLINDRICAL CYLINDRICAL CYLINDRICAL -
Peak Reflow Temperature (Celsius) NOT SPECIFIED 225 - 240 240 260 -
Polarity/channel type NPN NPN - NPN NPN NPN -
Maximum power dissipation(Abs) 1.5 W 0.625 W - 0.625 W 0.625 W 1.5 W -
Certification status Not Qualified Not Qualified - Not Qualified Not Qualified Not Qualified -
surface mount NO NO - NO NO NO -
Terminal surface Matte Tin (Sn) Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Silver/Copper (Sn/Ag/Cu) -
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-hole THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE -
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM -
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED - 30 30 40 -
transistor applications AMPLIFIER AMPLIFIER amplifier AMPLIFIER AMPLIFIER AMPLIFIER -
Transistor component materials SILICON SILICON silicon SILICON SILICON SILICON -
Nominal transition frequency (fT) 210 MHz 210 MHz - 210 MHz 210 MHz 210 MHz -

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