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BAT54

Description
0.2 A, 30 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size35KB,4 Pages
ManufacturerWon-Top Electronics Co., Ltd.
Websitehttps://www.wontop.com/
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BAT54 Overview

0.2 A, 30 V, SILICON, SIGNAL DIODE

BAT54 Parametric

Parameter NameAttribute value
Number of terminals3
Number of components1
Processing package descriptionROHS COMPLIANT, PLASTIC PACKAGE-3
stateACTIVE
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
CraftsmanshipSCHOTTKY
structuresingle
Diode component materialssilicon
Maximum power consumption limit0.2250 W
Diode typeSignal diode
Maximum repetitive peak reverse voltage30 V
Maximum average forward current0.2000 A
WTE
POWER SEMICONDUCTORS
BAT54 / A / C / S
Pb
SURFACE MOUNT SCHOTTKY BARRIER DIODE
Features
!
!
!
!
!
Low Turn-on Voltage
Fast Switching
PN Junction Guard Ring for Transient and
ESD Protection
Designed for Surface Mount Application
Plastic Material – UL Recognition Flammability
Classification 94V-O
A
L
B
C
M
E
H
D
Dim
A
B
C
D
E
G
H
J
K
L
M
SOT-23
Min
0.37
1.19
2.10
0.89
0.45
1.78
2.65
0.013
0.89
0.45
0.076
Max
0.51
1.40
2.50
1.05
0.61
2.05
3.05
0.15
1.10
0.61
0.178

Mechanical Data
!
!
!
!
!
!
Case: SOT-23, Molded Plastic
K
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: See Diagrams Below
Weight: 0.008 grams (approx.)
Mounting Position: Any
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
J
G
All Dimensions in mm
TOP VIEW
TOP VIEW
TOP VIEW
TOP VIEW
BAT54 Marking: L4
BAT54A Marking: L42
BAT54C Marking: L43
BAT54S Marking: L44
Maximum Ratings and Electrical Characteristics, Single Diode
@T
A
=25°C unless otherwise specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Forward Continuous Current (Note 1)
Repetitive Peak Forward Current (Note 1)
Forward Surge Current (Note 1)
Power Dissipation (Note 1)
Typical Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Note: 1. Device on fiberglass substrate.
@ t < 1.0s
Symbol
V
RRM
V
RWM
V
R
I
F
I
FRM
I
FSM
P
d
R
JA
T
j
, T
STG
Value
Unit
30
200
300
600
200
500
-65 to +125
V
mA
mA
mA
mW
K/W
°C
BAT54 / A / C / S
1 of 4
© 2006 Won-Top Electronics

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Description 0.2 A, 30 V, SILICON, SIGNAL DIODE 0.3 A, 2 ELEMENT, SILICON, SIGNAL DIODE 0.3 A, SILICON, SIGNAL DIODE 0.3 A, 2 ELEMENT, SILICON, SIGNAL DIODE 0.3 A, 2 ELEMENT, SILICON, SIGNAL DIODE 0.3 A, 2 ELEMENT, SILICON, SIGNAL DIODE 0.2 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE 0.2 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE 0.3 A, 2 ELEMENT, SILICON, SIGNAL DIODE
Number of terminals 3 3 3 3 - 3 3 3 3
Number of components 1 2 1 2 - 2 2 2 2
surface mount Yes YES YES YES - YES Yes Yes Yes
Terminal form GULL WING GULL WING GULL WING GULL WING - GULL WING GULL WING GULL WING GULL WING
Terminal location pair DUAL DUAL DUAL - DUAL pair pair pair
Diode component materials silicon SILICON SILICON SILICON - SILICON silicon silicon silicon
Diode type Signal diode RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE - RECTIFIER DIODE Signal diode Signal diode Signal diode
Maximum repetitive peak reverse voltage 30 V 30 V 30 V 30 V - 30 V 30 V 30 V -
Maximum reverse recovery time - 0.005 µs 0.005 µs 0.005 µs - 0.005 µs - - 0.0050 us
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