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B8S-T3

Description
0.5 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size52KB,4 Pages
ManufacturerWon-Top Electronics Co., Ltd.
Websitehttps://www.wontop.com/
Download Datasheet Parametric View All

B8S-T3 Overview

0.5 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE

B8S-T3 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerWon-Top Electronics Co., Ltd.
package instructionPLASTIC, MB-S, 4 PIN
Contacts4
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresUL RECOGNIZED
Minimum breakdown voltage800 V
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1 V
JESD-30 codeR-PDSO-G4
Maximum non-repetitive peak forward current30 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current0.5 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum repetitive peak reverse voltage800 V
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
WTE
POWER SEMICONDUCTORS
B1S – B10S
Pb
0.5A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER
Features
!
Glass Passivated Die Construction
G
!
Low Forward Voltage Drop
!
High Current Capability
!
High Surge Current Capability
!
Designed for Surface Mount Application
B
!
Plastic Material – UL Flammability 94V-O
!
Recognized File # E157705

-
~
+
~
H
D
C
E
A
L
MB-S
Dim
Min
Max
4.50
4.90
A
3.80
4.20
B
0.15
0.35
C
0.20
D
7.00
E
0.70
1.10
G
1.30
1.70
H
2.30
2.70
J
2.30
2.70
K
3.00
L
All Dimensions in mm
Mechanical Data
!
!
!
!
!
!
!
Case: MB-S, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: As Marked on Case
Weight: 0.22 grams (approx.)
Mounting Position: Any
Marking: Type Number
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
J
K
Maximum Ratings and Electrical Characteristics
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
@T
A
=25°C unless otherwise specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current (Note 1) @T
A
= 40°C
Average Rectified Output Current (Note 2) @T
A
= 40°C
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
I
2
t Rating for Fusing (t < 8.3ms)
Forward Voltage per element
Peak Reverse Current
At Rated DC Blocking Voltage
@I
F
= 0.5A
@T
A
= 25°C
@T
A
= 125°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
B1S
B2S
B4S
B6S
B8S
B10S
Unit
100
70
200
140
400
280
0.5
0.8
30
5.0
1.0
5.0
500
25
85
20
600
420
800
560
1000
700
V
V
A
I
FSM
I
2
t
V
FM
I
RM
C
j
R
JA
R
JL
T
j
, T
STG
A
A
2
s
V
µA
pF
°C/W
°C
Typical Junction Capacitance per leg (Note 3)
Typical Thermal Resistance per leg (Note 1)
Operating and Storage Temperature Range
-55 to +150
Note: 1. Mounted on glass epoxy PC board with 1.3mm
2
solder pad.
2. Mounted on aluminum substrate PC board with 1.3mm
2
solder pad.
3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
B1S – B10S
1 of 4
© 2006 Won-Top Electronics

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