STP7NK80Z - STP7NK80ZFP
STB7NK80Z - STB7NK80Z-1
N-channel 800V - 1.5Ω - 5.2A - TO-220/TO-220FP/D
2
PAK/I
2
PAK
Zener-protected SuperMESH™ Power MOSFET
General features
Type
STP7NK80Z
STP7NK80ZFP
STB7NK80Z
STB7NK80Z-1
■
■
■
■
■
V
DSS
(@Tjmax)
800V
800V
800V
800V
R
DS(on)
< 1.8Ω
< 1.8Ω
< 1.8Ω
< 1.8Ω
I
D
5.2A
5.2A
5.2A
5.2A
1
2
3
TO-220
TO-220FP
Extremely high dv/dt capability
100% avalange tested
Gate charge minimized
Very low intrinsic capacitances
Very good manufacturing repeatibility
1
3
3
12
D
2
PAK
I
2
PAK
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage Power MOSFETs including revolutionary
MDmesh™ products.
Internal schematic diagram
Applications
■
Switching application
Order codes
Part number
STP7NK80Z
STP7NK80ZFP
STB7NK80ZT4
STB7NK80Z-1
Marking
P7NK80Z
P7NK80ZFP
B7NK80Z
B7NK80Z-1
Package
TO-220
TO-220FP
D²PAK
I²PAK
Packaging
Tube
Tube
Tape e reel
Tube
October 2006
Rev 5
1/18
www.st.com
18
Contents
STP7NK80Z - STP7NK80ZFP - STB7NK80Z - STB7NK80Z-1
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1
Electrical characteristics (curves)
............................. 7
3
4
5
6
Test circuit
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
2/18
STP7NK80Z - STP7NK80ZFP - STB7NK80Z - STB7NK80Z-1
Electrical ratings
1
Electrical ratings
Table 1.
Symbol
Absolute maximum ratings
Value
Parameter
TO-220 / D²PAK
I²PAK
800
± 30
5.2
3.3
20.8
125
1
4000
4.5
--
2500
5.2
(1)
3.3
(1)
20.8
(1)
30
0.24
Unit
TO-220FP
V
V
A
A
A
W
W/°C
V
V/ns
V
°C
°C
V
DS
V
GS
I
D
I
D
I
DM (2)
P
TOT
Drain-source voltage (V
GS
= 0)
Gate- source voltage
Drain current (continuous) at T
C
= 25°C
Drain current (continuous) at T
C
= 100°C
Drain current (pulsed)
Total dissipation at T
C
= 25°C
Derating factor
V
ESD(G-S)
Gate source ESD(HBM-C=100pF, R=1.5KΩ)
dv/dt
(3)
V
ISO
T
j
T
stg
Peak diode recovery voltage slope
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1s; Tc= 25°C)
Max operating junction temperature
Storage temperature
-55 to 150
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I
SD
≤
5.2 A, di/dt
≤
200A/µs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
Table 2.
Thermal data
Value
Symbol
Parameter
TO-220/D
2
PAK
I
2
PAK
Unit
TO-220FP
4.2
°C/W
°C/W
°C
R
thj-case
R
thj-amb
T
l
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose
1
62.5
300
3/18
Electrical ratings
STP7NK80Z - STP7NK80ZFP - STB7NK80Z - STB7NK80Z-1
Table 3.
Symbol
I
AR
E
AS
Avalanche characteristics
Parameter
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
Single pulse avalanche energy
(starting Tj=25°C, Id=Iar, Vdd=50V)
Value
5.2
210
Unit
A
mJ
4/18
STP7NK80Z - STP7NK80ZFP - STB7NK80Z - STB7NK80Z-1
Electrical characteristics
2
Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 4.
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
On/off states
Parameter
Drain-source
Breakdown voltage
Zero gate voltage
Drain Current (V
GS
= 0)
Gate-body leakage
Current (V
DS
= 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
I
D
=1MA, V
GS
= 0
V
DS
= Max rating
V
DS
= Max rating, T
C
= 125°C
V
GS
= ± 20 V
V
DS
= V
GS
, I
D
= 100 µA
V
GS
= 10 V, I
D
= 2.6 A
3
3.75
1.5
Min.
800
1
50
± 10
4.5
1.8
Typ.
Max.
Unit
V
µA
µA
µA
V
Ω
Table 5.
Symbol
g
fs (1)
C
iss
C
oss
C
rss
C
oss eq.
(2)
Dynamic
Parameter
Test conditions
Min.
Typ.
5
1138
122
25
50
20
12
45
20
40
7
21
12
10
20
56
Max.
Unit
S
pF
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
ns
ns
ns
Forward transconductance V
DS
= 15v, I
D
= 2.6 A
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Off-voltage rise time
Fall time
Cross-over time
V
DS
= 25 V, f = 1 MHz,
V
GS
= 0
V
DS
=0V, V
DS
= 0V to 640V
t
d(on)
t
r
t
r(off)
t
r
Q
g
Q
gs
Q
gd
t
r(Voff)
t
r
t
c
V
DD
= 400 V, I
D
= 2.6 A,
R
G
= 4.7
Ω,
V
GS
= 10 V
(see
Figure 16)
V
DD
= 640 V, I
D
= 5.2 A,
V
GS
= 10 V
(see
Figure 17)
V
DD
= 640 V, I
D
= 5.2 A,
R
G
= 4.7
Ω,
V
GS
= 10 V
(see
Figure 16)
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80% V
DSS
.
5/18
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