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P7NK80Z

Description
5.2 A, 800 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size397KB,18 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Download Datasheet Parametric Compare View All

P7NK80Z Overview

5.2 A, 800 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

P7NK80Z Parametric

Parameter NameAttribute value
Number of terminals3
Minimum breakdown voltage800 V
Processing package descriptionROHS COMPLIANT, TO-220FP, 3 PIN
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRectangle
Package SizeFlange mounting
Terminal formTHROUGH-hole
terminal coatingMATTE Tin
Terminal locationsingle
Packaging MaterialsPlastic/Epoxy
structureSingle WITH BUILT-IN diode
Shell connectionisolation
Number of components1
transistor applicationsswitch
Transistor component materialssilicon
Channel typeN channel
field effect transistor technologyMetal-OXIDE SEMICONDUCTOR
operating modeENHANCEMENT
Transistor typeuniversal power supply
Maximum leakage current5.2 A
Rated avalanche energy210 mJ
Maximum drain on-resistance1.8 ohm
Maximum leakage current pulse20.8 A
STP7NK80Z - STP7NK80ZFP
STB7NK80Z - STB7NK80Z-1
N-channel 800V - 1.5Ω - 5.2A - TO-220/TO-220FP/D
2
PAK/I
2
PAK
Zener-protected SuperMESH™ Power MOSFET
General features
Type
STP7NK80Z
STP7NK80ZFP
STB7NK80Z
STB7NK80Z-1
V
DSS
(@Tjmax)
800V
800V
800V
800V
R
DS(on)
< 1.8Ω
< 1.8Ω
< 1.8Ω
< 1.8Ω
I
D
5.2A
5.2A
5.2A
5.2A
1
2
3
TO-220
TO-220FP
Extremely high dv/dt capability
100% avalange tested
Gate charge minimized
Very low intrinsic capacitances
Very good manufacturing repeatibility
1
3
3
12
D
2
PAK
I
2
PAK
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage Power MOSFETs including revolutionary
MDmesh™ products.
Internal schematic diagram
Applications
Switching application
Order codes
Part number
STP7NK80Z
STP7NK80ZFP
STB7NK80ZT4
STB7NK80Z-1
Marking
P7NK80Z
P7NK80ZFP
B7NK80Z
B7NK80Z-1
Package
TO-220
TO-220FP
D²PAK
I²PAK
Packaging
Tube
Tube
Tape e reel
Tube
October 2006
Rev 5
1/18
www.st.com
18

P7NK80Z Related Products

P7NK80Z B7NK80Z-1 B7NK80Z STP7NK80Z_06 P7NK80ZFP
Description 5.2 A, 800 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 5.2 A, 800 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 5.2 A, 800 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 5.2 A, 800 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 5.2 A, 800 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Number of terminals 3 3 3 3 3
Minimum breakdown voltage 800 V 800 V 800 V 800 V 800 V
Processing package description ROHS COMPLIANT, TO-220FP, 3 PIN ROHS COMPLIANT, TO-220FP, 3 PIN ROHS COMPLIANT, TO-220FP, 3 PIN ROHS COMPLIANT, TO-220FP, 3 PIN ROHS COMPLIANT, TO-220FP, 3 PIN
Lead-free Yes Yes Yes Yes Yes
EU RoHS regulations Yes Yes Yes Yes Yes
state ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE
packaging shape Rectangle Rectangle Rectangle Rectangle Rectangle
Package Size Flange mounting Flange mounting Flange mounting Flange mounting Flange mounting
Terminal form THROUGH-hole THROUGH-hole THROUGH-hole THROUGH-hole THROUGH-hole
terminal coating MATTE Tin MATTE Tin MATTE Tin MATTE Tin MATTE Tin
Terminal location single single single single single
Packaging Materials Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy
structure Single WITH BUILT-IN diode Single WITH BUILT-IN diode Single WITH BUILT-IN diode Single WITH BUILT-IN diode Single WITH BUILT-IN diode
Shell connection isolation isolation isolation isolation isolation
Number of components 1 1 1 1 1
transistor applications switch switch switch switch switch
Transistor component materials silicon silicon silicon silicon silicon
Channel type N channel N channel N channel N channel N channel
field effect transistor technology Metal-OXIDE SEMICONDUCTOR Metal-OXIDE SEMICONDUCTOR Metal-OXIDE SEMICONDUCTOR Metal-OXIDE SEMICONDUCTOR Metal-OXIDE SEMICONDUCTOR
operating mode ENHANCEMENT ENHANCEMENT ENHANCEMENT ENHANCEMENT ENHANCEMENT
Transistor type universal power supply universal power supply universal power supply universal power supply universal power supply
Maximum leakage current 5.2 A 5.2 A 5.2 A 5.2 A 5.2 A
Rated avalanche energy 210 mJ 210 mJ 210 mJ 210 mJ 210 mJ
Maximum drain on-resistance 1.8 ohm 1.8 ohm 1.8 ohm 1.8 ohm 1.8 ohm
Maximum leakage current pulse 20.8 A 20.8 A 20.8 A 20.8 A 20.8 A
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