E2G0056-17-41
¡ Semiconductor
MSM51V1000A
¡ Semiconductor
This version: Jan. 1998
MSM51V1000A
Previous version: May 1997
1,048,576-Word
¥
1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
DESCRIPTION
The MSM51V1000A is a 1,048,576-word
¥
1-bit dynamic RAM fabricated in Oki's silicon-gate CMOS
technology. The MSM51V1000A achieves high integration, high-speed operation, and low-power
consumption because Oki manufactures the device in a quadruple-layer polysilicon/single-layer
metal CMOS process. The MSM51V1000A is available in a 26/20-pin plastic SOJ or 20-pin plastic ZIP.
FEATURES
• 1,048,576-word
¥
1-bit configuration
• Single 3.3 V power supply,
±0.3
V tolerance
• Input
: LVTTL compatible, low input capacitance
• Output : LVTTL compatible, 3-state
• Refresh : 512 cycles/8 ms
• Fast page mode, read modify write capability
•
CAS
before
RAS
refresh, hidden refresh,
RAS-only
refresh capability
• Package options:
26/20-pin 300 mil plastic SOJ (SOJ26/20-P-300-1.27) (Product : MSM51V1000A-xxJS)
20-pin 400 mil plastic ZIP
(ZIP20-P-400-1.27)
(Product : MSM51V1000A-xxZS)
xx indicates speed rank.
PRODUCT FAMILY
Family
MSM51V1000A-70
MSM51V1000A-80
MSM51V1000A-10
Access Time (Max.)
t
RAC
70 ns
80 ns
100 ns
t
AA
40 ns
45 ns
50 ns
t
CAC
25 ns
25 ns
30 ns
Cycle Time
Power Dissipation
(Min.)
Operating (Max.) Standby (Max.)
130 ns
150 ns
190 ns
162 mW
144 mW
126 mW
1.8 mW
1/15
¡ Semiconductor
MSM51V1000A
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Parameter
Voltage on Any Pin Relative to V
SS
Short Circuit Output Current
Power Dissipation
Operating Temperature
Storage Temperature
Symbol
V
T
I
OS
P
D
*
T
opr
T
stg
Rating
–0.5 to 4.6
50
1
0 to 70
–55 to 150
Unit
V
mA
W
°C
°C
*: Ta = 25°C
Recommended Operating Conditions
Parameter
Power Supply Voltage
Input High Voltage
Input Low Voltage
Symbol
V
CC
V
SS
V
IH
V
IL
Min.
3.0
0
2.0
–0.3
Typ.
3.3
0
—
—
Max.
3.6
0
V
CC
+ 0.3
0.8
(Ta = 0°C to 70°C)
Unit
V
V
V
V
Capacitance
Parameter
Input Capacitance (A0 - A9, D
IN
)
Input Capacitance (RAS,
CAS, WE)
Output Capacitance (D
OUT
)
Symbol
C
IN1
C
IN2
C
OUT
Typ.
—
—
—
(V
CC
= 3.3 V ±0.3 V, Ta = 25°C, f = 1 MHz)
Max.
5
5
7
Unit
pF
pF
pF
4/15
¡ Semiconductor
DC Characteristics
MSM51V1000A
(V
CC
= 3.3 V ±0.3 V, Ta = 0°C to 70°C)
Parameter
Output High Voltage
Output Low Voltage
Input Leakage Current
Symbol
Condition
I
OH
= –2.0 mA
I
OL
= 2.0 mA
0 V
£
V
I
£
V
CC
+ 0.3 V;
All other pins not
under test = 0 V
D
OUT
disable
0 V
£
V
O
£
3.6 V
RAS, CAS
cycling,
t
RC
= Min.
RAS, CAS
= V
IH
MSM51V1000 MSM51V1000 MSM51V1000
A-70
A-80
A-10
Unit Note
Min.
Max.
V
CC
0.4
10
Min.
2.4
0
–10
Max.
V
CC
0.4
10
Min.
2.4
0
–10
Max.
V
CC
0.4
10
V
V
mA
2.4
0
–10
V
OH
V
OL
I
LI
Output Leakage Current
Average Power
Supply Current
(Operating)
Power Supply
Current (Standby)
Average Power
Supply Current
(RAS-only Refresh)
Power Supply
Current (Standby)
Average Power
Supply Current
(CAS before
RAS
Refresh)
Average Power
Supply Current
(Fast Page Mode)
I
LO
–10
10
–10
10
–10
10
mA
I
CC1
—
—
—
50
2
0.5
—
—
—
45
2
0.5
—
—
—
40
2
0.5
mA
1, 2
I
CC2
RAS, CAS
≥
V
CC
–0.2 V
RAS
cycling,
mA
1
I
CC3
CAS
= V
IH
,
t
RC
= Min.
RAS
= V
IH
,
—
50
—
45
—
40
mA
1, 2
I
CC5
CAS
= V
IL
,
D
OUT
= enable
—
5
—
5
—
5
mA
1
I
CC6
RAS
cycling,
CAS
before
RAS
RAS
= V
IL
,
—
50
—
45
—
40
mA
1, 2
I
CC7
CAS
cycling,
t
PC
= Min.
—
45
—
40
—
35
mA
1, 3
Notes : 1. I
CC
Max. is specified as I
CC
for output open condition.
2. The address can be changed once or less while
RAS
= V
IL
.
3. The address can be changed once or less while
CAS
= V
IH
.
5/15
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