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HER301G R0

Description
Rectifiers 3A,50V, G.P. HIGH EFFICIENT RECTIFIER
Categorysemiconductor    Discrete semiconductor   
File Size345KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

HER301G R0 Overview

Rectifiers 3A,50V, G.P. HIGH EFFICIENT RECTIFIER

HER301G R0 Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerTaiwan Semiconductor
Product CategoryRectifiers
RoHSDetails
Mounting StyleThrough Hole
Package / CaseDO-201AD-2
Vr - Reverse Voltage50 V
If - Forward Current3 A
TypeFast Recovery Rectifiers
ConfigurationSingle
Vf - Forward Voltage1 V
Max Surge Current125 A
Ir - Reverse Current10 uA
Recovery Time50 ns
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingReel
Height5.6 mm
Length9.5 mm
ProductRectifiers
Width5.6 mm
Factory Pack Quantity1250
Unit Weight0.045151 oz
HER301G - HER308G
Taiwan Semiconductor
CREAT BY ART
3A, 50V - 1000V Glass Passivated High Efficient Rectifiers
FEATURES
- Glass passivated chip junction
- High current capability, Low VF
- High reliability
- High surge current capability
- Low power loss, high efficiency
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case:
DO-201AD
Molding compound, UL flammability classification rating 94V-0
Part No. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Pure tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Weight:
1.1 g (approximately)
DO-201AD
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
@3A
Maximum reverse current @ rated VR
T
J
=25 °C
T
J
=125 °C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
t
rr
C
J
R
θJL
R
θJA
T
J
T
STG
50
60
10
35
- 55 to +150
- 55 to +150
1.0
10
200
75
35
HER
50
35
50
HER
100
70
100
HER
200
140
200
HER
300
210
300
3
125
1.3
1.7
HER
400
280
400
HER
600
420
600
HER
800
560
800
HER
1000
700
1000
301G 302G 303G 304G 305G 306G 307G 308G
UNIT
V
V
V
A
A
V
μA
ns
pF
°C/W
°C
°C
Maximum reverse recovery time (Note 2)
Typical junction capacitance (Note 3)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse Test with PW=300μs, 1% Duty Cycle
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Document Number: DS_D1410041
Version: H15
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