BUK6Y25-40P
7 June 2018
40 V, P-channel Trench MOSFET
Product data sheet
1. General description
P-channel enhancement mode MOSFET in an LFPAK56 (Power SO8) Surface-Mounted Device
(SMD) plastic package using Trench MOSFET technology.
This product has been designed and qualified to AEC-Q101 standard for use in high-performance
automotive applications such as reverse battery protection.
2. Features and benefits
•
•
•
•
High thermal power dissipation capability
Suitable for thermally demanding environments due to 175 °C rating
Trench MOSFET technology
AEC-Q101 qualified
3. Applications
•
•
•
•
Reverse battery protection
Power management
High-side loadswitch
Motor drive
4. Quick reference data
Table 1. Quick reference data
Symbol
V
DS
V
GS
I
D
P
tot
R
DSon
[1]
Parameter
drain-source voltage
gate-source voltage
drain current
total power dissipation
drain-source on-state
resistance
Conditions
T
j
= 25 °C
[1]
V
GS
= -10 V; T
mb
= 25 °C
T
mb
= 25 °C
V
GS
= -10 V; I
D
= -7.9 A; T
j
= 25 °C
Min
-
-20
-
-
-
Typ
-
-
-
-
18
Max
-40
20
-38
66
25
Unit
V
V
A
W
mΩ
Static characteristics
V
GS
= -20 V/+5 V according AEC-Q101 at T
j
= 175 °C; V
GS
= -20 V/+20 V according AEC-Q101 at T
j
= 150 °C
Nexperia
BUK6Y25-40P
40 V, P-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information
Pin
1
2
3
4
mb
Symbol Description
S
S
S
G
D
source
source
source
gate
mounting base; connected to
drain
1 2 3 4
G
S
Simplified outline
mb
Graphic symbol
D
LFPAK56; Power-
SO8 (SOT669)
017aaa094
6. Ordering information
Table 3. Ordering information
Type number
BUK6Y25-40P
Package
Name
LFPAK56;
Power-SO8
Description
plastic, single-ended surface-mounted package; 4 terminals
Version
SOT669
7. Marking
Table 4. Marking codes
Type number
BUK6Y25-40P
Marking code
6Y2540P
BUK6Y25-40P
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2018. All rights reserved
Product data sheet
7 June 2018
2 / 14
Nexperia
BUK6Y25-40P
40 V, P-channel Trench MOSFET
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
I
D
I
DM
P
tot
T
j
T
amb
T
stg
I
S
I
SM
V
ESD
Parameter
drain-source voltage
gate-source voltage
drain current
peak drain current
total power dissipation
junction temperature
ambient temperature
storage temperature
source current
peak source current
electrostatic discharge
voltage
non-repetitive drain-
source avalanche
energy
T
mb
= 25 °C
single pulse; t
p
≤ 10 µs; T
mb
= 25 °C
HBM
[2]
V
GS
= -10 V; T
mb
= 25 °C
V
GS
= -10 V; T
mb
= 100 °C
single pulse; t
p
≤ 10 µs; T
mb
= 25 °C
T
mb
= 25 °C
Conditions
T
j
= 25 °C
[1]
Min
-
-20
-
-
-
-
-55
-55
-65
-
-
-
Max
-40
20
-38
-27
-151
66
175
175
175
-38
-151
1000
Unit
V
V
A
A
A
W
°C
°C
°C
A
A
V
Source-drain diode
ESD maximum rating
Avalanche ruggedness
E
DS(AL)S
V
sup
≤ -40 V; V
GS
= -10 V; T
j(init)
= 25 °C;
I
D
= -7.9 A; DUT in avalanche
(unclamped)
-
4.2
mJ
[1]
[2]
V
GS
= -20 V/+5 V according AEC-Q101 at T
j
= 175 °C; V
GS
= -20 V/+20 V according AEC-Q101 at T
j
= 150 °C
Measured between all pins.
BUK6Y25-40P
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2018. All rights reserved
Product data sheet
7 June 2018
3 / 14
Nexperia
BUK6Y25-40P
40 V, P-channel Trench MOSFET
120
P
der
(%)
80
aaa-026120
120
I
der
(%)
80
aaa-026121
40
40
0
-75
25
125
T
j
(°C)
225
0
-75
25
125
T
j
(°C)
225
Fig. 1.
-10
3
I
D
(A)
-10
2
Normalized total power dissipation as a
function of junction temperature
Fig. 2.
Normalized continuous drain current as a
function of junction temperature
aaa-028086
Limit R
DSon
= V
DS
/I
D
t
p
= 10 µs
100 µs
-10
DC; T
mb
= 25 °C
1 ms
10 ms
100 ms
-1
-10
-1
-1
-10
-10
2
V
DS
(V)
Fig. 3.
Safe operating area; junction to mounting base; continuous and peak drain currents as a function of
drain-source voltage
BUK6Y25-40P
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2018. All rights reserved
Product data sheet
7 June 2018
4 / 14
Nexperia
BUK6Y25-40P
40 V, P-channel Trench MOSFET
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
R
th(j-mb)
Parameter
thermal resistance
from junction to
mounting base
Conditions
Min
-
Typ
1.8
Max
2.3
Unit
K/W
10
Z
th(j-mb)
(K/W) duty cycle = 1
1
0.75
0.33
0.20
10
-1
0.05
0.01
10
-2
0
0.50
0.25
0.10
0.02
aaa-028087
10
-3
10
-5
10
-4
10
-3
10
-2
10
-1
1
10
10
2
t
p
(s)
10
3
Fig. 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration; typical
values
BUK6Y25-40P
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2018. All rights reserved
Product data sheet
7 June 2018
5 / 14
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