LMUN5114DW1T1 datasheet, PDF - EEWORLD Datasheet

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LMUN5114DW1T1: DescriptionDual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network; CategoryDiscrete semiconductor The transistor; File Size315KB，12 Pages; ManufacturerLRC; Websitehttp://www.lrc.cn

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LMUN5114DW1T1 Overview

Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

LMUN5114DW1T1 Parametric

Parameter Name	Attribute value
Maker	LRC
package instruction	,
Reach Compliance Code	unknow
Maximum collector current (IC)	0.1 A
Minimum DC current gain (hFE)	80
Number of components	2
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.385 W
surface mount	YES
Transistor component materials	SILICON

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LESHAN RADIO COMPANY, LTD.

Dual Bias Resistor Transistors

PNP Silicon Surface Mount Transistors

with Monolithic Bias Resistor Network

The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias

network consisting of two resistors; a series base resistor and a base–emitter resistor. These

digital transistors are designed to replace a single device and its external resistor bias network.

The BRT eliminates these individual components by integrating them into a single device. In

the LMUN5111DW1T1 series, two BRT devices are housed in the SOT–363 package which

is ideal for low–power surface mount applications where board space is at a premium.

. Simplifies Circuit Design

. Reduces Board Space

. Reduces Component Count

. Available in 8 mm, 7 inch/3000 Unit Tape and Reel

LMUN5111DW1T1

Series

SC-88/SOT-363

MAXIMUM RATINGS

= 25°C unless otherwise noted, common for Q

and Q

)

Rating

Symbol Value

Unit

Collector-Base Voltage

CBO

–50

Vdc

Collector-Emitter Voltage

CEO

–50

Vdc

Collector Current

–100 mAdc

THERMAL CHARACTERISTICS

Characteristic

(One Junction Heated)

Symbol

Max

Unit

Total Device Dissipation

187 (Note 1.)

256 (Note 2.)

= 25°C

1.5 (Note 1.)

mW/°C

Derate above 25°C

2.0 (Note 2.)

Thermal Resistance –

Junction-to-Ambient

Characteristic

(Both Junctions Heated)

Total Device Dissipation

= 25°C

Derate above 25°C

Thermal Resistance –

Junction-to-Ambient

Thermal Resistance –

Junction-to-Lead

Junction and Storage

Temperature

1. FR–4 @ Minimum Pad

θJA

670 (Note 1.)

490 (Note 2.)

°C/W

MARKING DIAGRAM

xx = Device Marking

(See Page 2)

Symbol

Max

250 (Note 1.)

385 (Note 2.)

2.0 (Note 1.)

3.0 (Note 2.)

493 (Note 1.)

325 (Note 2.)

188 (Note 1.)

208 (Note 2.)

–55 to +150

Unit

mW/°C

°C/W

°C

DEVICE MARKING

INFORMATION

See specific marking information in

the device marking table on page 2 of

this data sheet.

θJA

θJL

, T

stg

2. FR–4 @ 1.0 x 1.0 inch Pad

LMUN5111DW–1/12

LMUN5114DW1T1 Related Products

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Maker	LRC	LRC	LRC	LRC	LRC	LRC	LRC	LRC
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow	unknow	unknow
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A
Minimum DC current gain (hFE)	80	80	80	80	80	8	3	15
Number of components	2	2	2	2	2	2	2	2
Polarity/channel type	PNP	PNP	PNP	PNP	PNP	PNP	PNP	PNP
Maximum power dissipation(Abs)	0.385 W	0.385 W	0.385 W	0.385 W	0.385 W	0.385 W	0.385 W	0.385 W
surface mount	YES	YES	YES	YES	YES	YES	YES	YES
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON

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