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IRLH7134

Categorysemiconductor    Discrete semiconductor   
File Size518KB,10 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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IRLH7134PbF
HEXFET
®
Power MOSFET
V
DSS
R
DS(on)
max
(@ V
GS
= 10V)
Q
g (typical)
(@T
C (Bottom)
= 25°C)
I
D
40
3.3
39
50
V
m
nC
A
PQFN 5X6 mm
Applications

Secondary Side Synchronous Rectification

Inverters for DC Motors

DC-DC Brick Applications

Boost Converters
Features
Low R
DS(ON)
(< 4.7m@ V
GS
= 4.5V)
Low Thermal Resistance to PCB (<1.2°C/W)
Low Profile (<0.9mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Benefits
Lower Conduction Losses
Enables better thermal dissipation
results in Increased Power Density
Multi-Vendor Compatibility

Easier Manufacturing
Environmentally Friendlier
Increased Reliability
 
 
Orderable Part Number
 
IRLH7134TRPbF
IRLH7134TR2PbF
Absolute Maximum Ratings
Package Type
 
PQFN 5mm x 6 mm
PQFN 5mm x 6 mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
EOL notice # 259
 
 
Units
V
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C(Bottom)
= 25°C
I
D
@ T
C(Bottom)
= 100°C
I
D
@ T
C(Bottom)
= 25°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C(Bottom)
= 25°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V (Package Limited)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
40
± 16
26
21
134
85
50
640
3.6
104
0.029
-55 to + 150
A
W
W/°C
°C
Notes
through
are on page 9
1
2016-08-01

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