Philips Semiconductors
Product specification
2-input NOR gate
FEATURES
•
Symmetrical output impedance
•
High noise immunity
•
ESD protection:
– HBM EIA/JESD22-A114-A exceeds 2000 V
– MM EIA/JESD22-A115-A exceeds 200 V
– CDM EIA/JESD22-C101 exceeds 1000 V.
•
Low power dissipation
•
Balanced propagation delays
•
Very small 5-pin package
•
Output capability: standard
•
Specified from
−40
to +125
°C.
QUICK REFERENCE DATA
GND = 0 V; T
amb
= 25
°C;
t
r
= t
f
≤
3.0 ns.
74AHC1G02; 74AHCT1G02
DESCRIPTION
The 74AHC1G/AHCT1G02 is a high-speed Si-gate CMOS
device.
The 74AHC1G/AHCT1G02 provides the 2-input NOR
function.
TYPICAL
SYMBOL
t
PHL
/t
PLH
C
I
C
PD
Notes
1. C
PD
is used to determine the dynamic power dissipation (P
D
in
µW).
P
D
= C
PD
×
V
CC2
×
f
i
+ (C
L
×
V
CC2
×
f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in Volts.
2. The condition is V
I
= GND to V
CC
.
PARAMETER
propagation delay A and B to Y
input capacitance
power dissipation capacitance
C
L
= 50 pF; f = 1 MHz;
notes 1 and 2
CONDITIONS
AHC1G
C
L
= 15 pF; V
CC
= 5 V
3.2
1.5
18
AHCT1G
3.5
1.5
19
ns
pF
pF
UNIT
2002 May 27
2
Philips Semiconductors
Product specification
2-input NOR gate
74AHC1G02; 74AHCT1G02
handbook, halfpage
1
2
≥
1
MNA104
handbook, halfpage
B
Y
A
MNA105
4
Fig.3 IEC logic symbol.
Fig.4 Logic diagram.
RECOMMENDED OPERATING CONDITIONS
74AHC1G
SYMBOL
V
CC
V
I
V
O
T
amb
PARAMETER
supply voltage
input voltage
output voltage
operating ambient
temperature
input rise and fall
times
see DC and AC
characteristics per
device
V
CC
= 3.3
±0.3
V
V
CC
= 5
±0.5
V
CONDITIONS
MIN.
2.0
0
0
−40
TYP.
5.0
−
−
+25
MAX.
5.5
5.5
V
CC
+125
MIN.
4.5
0
0
−40
TYP.
5.0
−
−
+25
MAX.
5.5
5.5
V
CC
+125
V
V
V
°C
74AHCT1G
UNIT
t
r
, t
f
(∆t/∆f)
−
−
−
−
100
20
−
−
−
−
−
20
ns/V
ns/V
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).
SYMBOL
V
CC
V
I
I
IK
I
OK
I
O
I
CC
T
stg
P
D
Note
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
PARAMETER
supply voltage
input voltage
input diode current
output diode current
output source or sink current
V
CC
or GND current
storage temperature
power dissipation per package
for temperature range from
−40
to +125
°C
V
I
<
−0.5
V
V
O
<
−0.5
or V
O
> V
CC
+ 0.5 V; note 1
−0.5
V < V
O
< V
CC
+ 0.5 V
CONDITIONS
MIN.
−0.5
−0.5
−
−
−
−
−65
−
MAX.
+7.0
+7.0
−20
±20
±25
±75
+150
250
UNIT
V
V
mA
mA
mA
mA
°C
mW
2002 May 27
4
Philips Semiconductors
Product specification
2-input NOR gate
DC CHARACTERISTICS
74AHC1G02; 74AHCT1G02
Family 74AHC1G
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
TEST CONDITIONS
SYMBOL
PARAMETER
OTHER
V
IH
HIGH-level input
voltage
V
CC
(V)
2.0
3.0
5.5
V
IL
LOW-level input
voltage
2.0
3.0
5.5
V
OH
HIGH-level output
voltage
V
I
= V
IH
or V
IL
;
I
O
=
−50 µA
V
I
= V
IH
or V
IL
;
I
O
=
−50 µA
V
I
= V
IH
or V
IL
;
I
O
=
−50 µA
V
I
= V
IH
or V
IL
;
I
O
=
−4.0
mA
V
I
= V
IH
or V
IL
;
I
O
=
−8.0
mA
V
OL
LOW-level output
voltage
V
I
= V
IH
or V
IL
;
I
O
= 50
µA
V
I
= V
IH
or V
IL
;
I
O
= 50
µA
V
I
= V
IH
or V
IL
;
I
O
= 50
µA
V
I
= V
IH
or V
IL
;
I
O
= 4.0 mA
V
I
= V
IH
or V
IL
;
I
O
= 8.0 mA
I
LI
I
CC
C
I
input leakage
current
quiescent supply
current
input capacitance
V
I
= V
CC
or GND
V
I
= V
CC
or GND;
I
O
= 0
2.0
3.0
4.5
3.0
4.5
2.0
3.0
4.5
3.0
4.5
5.5
5.5
25
MIN.
1.5
2.1
3.85
−
−
−
1.9
2.9
4.4
2.58
3.94
−
−
−
−
−
−
−
−
−
−
−
−
−
−
2.0
3.0
4.5
−
−
0
0
0
−
−
−
−
1.5
−
−
−
0.5
0.9
1.65
−
−
−
−
−
0.1
0.1
0.1
0.36
0.36
0.1
1.0
10
T
amb
(°C)
−40
to +85
−
−
−
0.5
0.9
1.65
−
−
−
−
−
0.1
0.1
0.1
0.44
0.44
1.0
10
10
−40
to +125
−
−
−
0.5
0.9
1.65
−
−
−
−
−
0.1
0.1
0.1
0.55
0.55
2.0
40
10
UNIT
TYP. MAX. MIN. MAX. MIN. MAX.
1.5
2.1
3.85
−
−
−
1.9
2.9
4.4
2.48
3.8
−
−
−
−
−
−
−
−
1.5
2.1
3.85
−
−
−
1.9
2.9
4.4
2.40
3.70
−
−
−
−
−
−
−
−
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
µA
µA
pF
2002 May 27
5
Embedded System
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