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BC818-40

Description
Small Signal Bipolar Transistor,
CategoryThe transistor   
File Size167KB,4 Pages
ManufacturerGalaxy Semi-Conductor Co., Ltd.
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Small Signal Bipolar Transistor,

BC818-40 Parametric

Parameter NameAttribute value
MakerGalaxy Semi-Conductor Co., Ltd.
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknown
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage25 V
ConfigurationSINGLE
Minimum DC current gain (hFE)170
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)170 MHz
Base Number Matches1
BL
Galaxy Electrical
NPN General Purpose Amplifier
FEATURES
For general AF application.
Complementary PNP type available
BC808.
High collector current, high current gain.
Low collector-emitter saturation voltage.
Production specification
BC818
Pb
Lead-free
APPLICATIONS
General purpose medium power amplifier.
SOT-23
ORDERING INFORMATION
Type No.
BC818-16
BC818-25
BC818-40
Marking
6E
6F
6G
Package Code
SOT-23
SOT-23
SOT-23
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j,
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
Value
30
25
5
500
330
-65to+150
Unit
V
V
V
mA
mW
Document number: BL/SSSTC102
Rev.A
www.galaxycn.com
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