IRF9541 datasheet, PDF - EEWORLD Datasheet

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IRF9541: Description19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB; CategoryDiscrete semiconductor The transistor; File Size417KB，7 Pages; ManufacturerHarris; Websitehttp://www.harris.com/

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IRF9541 Overview

19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB

IRF9541 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Harris
package instruction	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknown
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	960 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	80 V
Maximum drain current (Abs) (ID)	19 A
Maximum drain current (ID)	19 A
Maximum drain-source on-resistance	0.2 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	P-CHANNEL
Maximum power consumption environment	125 W
Maximum power dissipation(Abs)	125 W
Maximum pulsed drain current (IDM)	76 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum off time (toff)	140 ns
Maximum opening time (tons)	120 ns
Base Number Matches	1

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IRF9541 Related Products

	IRF9541	IRF9542	IRF9543	RF1S9540SM	RF1S9540
Description	19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB	19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB	19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB	19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB	19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-262AA
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible
package instruction	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	SMALL OUTLINE, R-PSSO-G2	IN-LINE, R-PSIP-T3
Reach Compliance Code	unknown	unknow	unknow	unknow	unknow
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	80 V	100 V	80 V	100 V	100 V
Maximum drain current (Abs) (ID)	19 A	15 A	15 A	19 A	19 A
Maximum drain current (ID)	19 A	15 A	15 A	19 A	19 A
Maximum drain-source on-resistance	0.2 Ω	0.3 Ω	0.3 Ω	0.2 Ω	0.2 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB	TO-220AB	TO-220AB	TO-263AB	TO-262AA
JESD-30 code	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSSO-G2	R-PSIP-T3
JESD-609 code	e0	e0	e0	e0	e0
Number of components	1	1	1	1	1
Number of terminals	3	3	3	2	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C	175 °C	175 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	SMALL OUTLINE	IN-LINE
Polarity/channel type	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL
Maximum power dissipation(Abs)	125 W	125 W	125 W	150 W	150 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	YES	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	GULL WING	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Maker	Harris	Harris	Harris	Harris	-
Avalanche Energy Efficiency Rating (Eas)	960 mJ	960 mJ	960 mJ	-	960 mJ
Shell connection	DRAIN	DRAIN	DRAIN	-	DRAIN
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	-
Maximum power consumption environment	125 W	125 W	125 W	-	-
Maximum pulsed drain current (IDM)	76 A	60 A	60 A	-	76 A
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	-
transistor applications	SWITCHING	SWITCHING	SWITCHING	-	SWITCHING
Maximum off time (toff)	140 ns	140 ns	140 ns	-	-
Maximum opening time (tons)	120 ns	120 ns	120 ns	-	-

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