RF1S9540 datasheet, PDF - EEWORLD Datasheet

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RF1S9540: Description19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-262AA; CategoryDiscrete semiconductor The transistor; File Size417KB，7 Pages; ManufacturerHarris; Websitehttp://www.harris.com/

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RF1S9540 Overview

19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-262AA

RF1S9540 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	IN-LINE, R-PSIP-T3
Reach Compliance Code	unknow
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	960 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (Abs) (ID)	19 A
Maximum drain current (ID)	19 A
Maximum drain-source on-resistance	0.2 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-262AA
JESD-30 code	R-PSIP-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Polarity/channel type	P-CHANNEL
Maximum power dissipation(Abs)	150 W
Maximum pulsed drain current (IDM)	76 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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RF1S9540 Related Products

	RF1S9540	IRF9541	IRF9542	IRF9543	RF1S9540SM
Description	19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-262AA	19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB	19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB	19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB	19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible
package instruction	IN-LINE, R-PSIP-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code	unknow	unknown	unknow	unknow	unknow
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE
Minimum drain-source breakdown voltage	100 V	80 V	100 V	80 V	100 V
Maximum drain current (Abs) (ID)	19 A	19 A	15 A	15 A	19 A
Maximum drain current (ID)	19 A	19 A	15 A	15 A	19 A
Maximum drain-source on-resistance	0.2 Ω	0.2 Ω	0.3 Ω	0.3 Ω	0.2 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-262AA	TO-220AB	TO-220AB	TO-220AB	TO-263AB
JESD-30 code	R-PSIP-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSSO-G2
JESD-609 code	e0	e0	e0	e0	e0
Number of components	1	1	1	1	1
Number of terminals	3	3	3	3	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	175 °C	150 °C	150 °C	150 °C	175 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	SMALL OUTLINE
Polarity/channel type	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL
Maximum power dissipation(Abs)	150 W	125 W	125 W	125 W	150 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	YES
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	GULL WING
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Avalanche Energy Efficiency Rating (Eas)	960 mJ	960 mJ	960 mJ	960 mJ	-
Shell connection	DRAIN	DRAIN	DRAIN	DRAIN	-
Maximum pulsed drain current (IDM)	76 A	76 A	60 A	60 A	-
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	-
Maker	-	Harris	Harris	Harris	Harris
Peak Reflow Temperature (Celsius)	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-
Maximum power consumption environment	-	125 W	125 W	125 W	-
Maximum time at peak reflow temperature	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-
Maximum off time (toff)	-	140 ns	140 ns	140 ns	-
Maximum opening time (tons)	-	120 ns	120 ns	120 ns	-

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