K4J55323QG-BC12 datasheet, PDF

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K4J55323QG-BC12: Description256Mbit GDDR3 SDRAM; Categorystorage storage; File Size1MB，53 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/; Environmental Compliance

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K4J55323QG-BC12 Overview

256Mbit GDDR3 SDRAM

K4J55323QG-BC12 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	SAMSUNG
package instruction	FBGA, BGA136,12X17,32
Reach Compliance Code	unknow
Maximum access time	0.23 ns
Maximum clock frequency (fCLK)	800 MHz
I/O type	COMMON
interleaved burst length	4,8
JESD-30 code	R-PBGA-B136
memory density	268435456 bi
Memory IC Type	DDR DRAM
memory width	32
Humidity sensitivity level	3
Number of terminals	136
word count	8388608 words
character code	8000000
Maximum operating temperature	85 °C
Minimum operating temperature
organize	8MX32
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	FBGA
Encapsulate equivalent code	BGA136,12X17,32
Package shape	RECTANGULAR
Package form	GRID ARRAY, FINE PITCH
power supply	1.8 V
Certification status	Not Qualified
refresh cycle	4096
Continuous burst length	4,8
Maximum standby current	0.1 A
Maximum slew rate	1.05 mA
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	OTHER
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM

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K4J55323QG

256M GDDR3 SDRAM

256Mbit GDDR3 SDRAM

Revision 1.1

November 2005

Notice

INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,

AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL

INFORMATION IN THIS DOCUMENT IS PROVIDED

ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.

1. For updates or additional information about Samsung products, contact your nearest Samsung office.

2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar

applications where Product failure could result in loss of life or personal or physical harm, or any military or

defense application, or any governmental procurement to which special terms or provisions may apply.

* Samsung Electronics reserves the right to change products or specification without notice.

1 of 53

Rev. 1.1 November 2005

K4J55323QG-BC12 Related Products

	K4J55323QG-BC12	K4J55323QG	K4J55323QG-BC14	K4J55323QG-BC16	K4J55323QG-BC20
Description	256Mbit GDDR3 SDRAM	256Mbit GDDR3 SDRAM	256Mbit GDDR3 SDRAM	256Mbit GDDR3 SDRAM	256Mbit GDDR3 SDRAM
Is it Rohs certified?	conform to	-	conform to	conform to	conform to
Maker	SAMSUNG	-	SAMSUNG	SAMSUNG	SAMSUNG
package instruction	FBGA, BGA136,12X17,32	-	TFBGA, BGA136,12X17,32	FBGA, BGA136,12X17,32	FBGA, BGA136,12X17,32
Reach Compliance Code	unknow	-	unknow	unknow	unknow
Maximum access time	0.23 ns	-	0.26 ns	0.29 ns	0.35 ns
Maximum clock frequency (fCLK)	800 MHz	-	700 MHz	600 MHz	500 MHz
I/O type	COMMON	-	COMMON	COMMON	COMMON
interleaved burst length	4,8	-	4,8	4,8	4,8
JESD-30 code	R-PBGA-B136	-	R-PBGA-B136	R-PBGA-B136	R-PBGA-B136
memory density	268435456 bi	-	268435456 bi	268435456 bi	268435456 bi
Memory IC Type	DDR DRAM	-	DDR DRAM	DDR DRAM	DDR DRAM
memory width	32	-	32	32	32
Number of terminals	136	-	136	136	136
word count	8388608 words	-	8388608 words	8388608 words	8388608 words
character code	8000000	-	8000000	8000000	8000000
Maximum operating temperature	85 °C	-	85 °C	85 °C	85 °C
organize	8MX32	-	8MX32	8MX32	8MX32
Output characteristics	3-STATE	-	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	FBGA	-	TFBGA	FBGA	FBGA
Encapsulate equivalent code	BGA136,12X17,32	-	BGA136,12X17,32	BGA136,12X17,32	BGA136,12X17,32
Package shape	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	GRID ARRAY, FINE PITCH	-	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, FINE PITCH	GRID ARRAY, FINE PITCH
power supply	1.8 V	-	1.8 V	1.8 V	1.8 V
Certification status	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified
refresh cycle	4096	-	4096	4096	4096
Continuous burst length	4,8	-	4,8	4,8	4,8
Maximum standby current	0.1 A	-	0.09 A	0.08 A	0.07 A
Maximum slew rate	1.05 mA	-	0.935 mA	0.86 mA	0.83 mA
Nominal supply voltage (Vsup)	1.8 V	-	1.8 V	1.8 V	1.8 V
surface mount	YES	-	YES	YES	YES
technology	CMOS	-	CMOS	CMOS	CMOS
Temperature level	OTHER	-	OTHER	OTHER	OTHER
Terminal form	BALL	-	BALL	BALL	BALL
Terminal pitch	0.8 mm	-	0.8 mm	0.8 mm	0.8 mm
Terminal location	BOTTOM	-	BOTTOM	BOTTOM	BOTTOM

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