D ts e t
aa h e
R c e t r lc r nc
o h se Ee to is
Ma u a t r dCo o e t
n fc u e
mp n n s
R c e tr b a d d c mp n ns ae
o h se rn e
o oet r
ma ua trd u ig ete dewaes
n fcue sn i r i/ fr
h
p rh s d f m te oiia s p l r
uc a e r
o h r n l u pi s
g
e
o R c e tr waes rce td f m
r o h se
fr e rae r
o
te oiia I. Al rce t n ae
h
r nl P
g
l e rai s r
o
d n wi tea p o a o teOC
o e t h p rv l f h
h
M.
P r aetse u igoiia fcoy
at r e td sn r n la tr
s
g
ts p o rmso R c e tr e eo e
e t rga
r o h se d v lp d
ts s lt n t g aa te p o u t
e t oui s o u rne
o
rd c
me t o e c e teOC d t s e t
es r x e d h
M aa h e.
Qu l yOv riw
ai
t
e ve
• IO- 0 1
S 90
•A 92 cr ct n
S 1 0 et ai
i
o
• Qu l e Ma ua trr Ls (
ai d
n fcues it QML MI- R -
) LP F
385
53
•C a sQ Mitr
ls
lay
i
•C a sVS a eL v l
ls
p c ee
• Qu l e S p l r Ls o D sr uos( L )
ai d u pi s it f it b tr QS D
e
i
•R c e trsacic l u pir oD A a d
o h se i
r ia s p l t L n
t
e
me t aln u t a dD A sa d r s
es lid sr n L tn ad .
y
R c e tr lcrnc , L i c mmi e t
o h se Ee t is L C s o
o
tdo
t
s p ligp o u t ta s t f c so r x e t-
u pyn rd cs h t ai y u tme e p ca
s
t n fr u lya daee u loto eoiial
i s o q ai n r q a t h s r n l
o
t
g
y
s p l db id sr ma ua trr.
u pi
e yn ut
y n fcues
T eoiia ma ua trr d ts e t c o a yn ti d c me t e e t tep r r n e
h r n l n fcue’ aa h e a c mp n ig hs o u n r cs h ef ma c
g
s
o
a ds e ic t n o teR c e tr n fcue v rino ti d vc . o h se Ee t n
n p c ai s f h o h se ma ua trd eso f hs e ie R c e tr lcr -
o
o
isg aa te tep r r n eo i s mio d co p o u t t teoiia OE s e ic -
c u rne s h ef ma c ft e c n u tr rd cs o h r n l M p c a
o
s
g
t n .T pc lv le aefr eee c p r o e o l. eti mii m o ma i m rt g
i s ‘y ia’ au s r o rfrn e up s s ny C r n nmu
o
a
r xmu ai s
n
ma b b s do p o u t h rceiain d sg , i lt n o s mpetsig
y e a e n rd c c aa tr t , e in smuai , r a l e t .
z o
o
n
© 2 1 R cetr l t n s LC Al i t R sre 0 1 2 1
0 3 ohs E cr i , L . lRg s eevd 7 1 0 3
e e oc
h
T l r m r, l s v iw wrcl . m
o e n oe p ae it w . e c o
a
e
s
o ec
HIGH VOLTAGE
PHOTOTRANSISTOR OPTOCOUPLERS
DESCRIPTION
The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting
diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage
NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package.
H11D1
H11D2
H11D3
H11D4
4N38
FEATURES
• High Voltage
- H11D1, H11D2, BV
CER
= 300 V
- H11D3, H11D4, BV
CER
= 200 V
• High isolation voltage
- 5300 VAC RMS - 1 minute
- 7500 VAC PEAK - 1 minute
• Underwriters Laboratory (UL) recognized File# E90700
ANODE 1
6 BASE
APPLICATIONS
•
•
•
•
•
Power supply regulators
Digital logic inputs
Microprocessor inputs
Appliance sensor systems
Industrial controls
CATHODE 2
5 COLLECTOR
N/C 3
4 EMITTER
ABSOLUTE MAXIMUM RATINGS
Parameter
TOTAL DEVICE
Storage Temperature
Operating Temperature
Lead Solder Temperature
Total Device Power Dissipation @ T
A
= 25°C
Derate above 25°C
EMITTER
*Forward DC Current
*Reverse Input Voltage
*Forward Current - Peak (1µs pulse, 300pps)
*LED Power Dissipation @ T
A
= 25°C
Derate above 25°C
Symbol
T
STG
T
OPR
T
SOL
P
D
I
F
V
R
I
F
(pk)
P
D
Value
-55 to +150
-55 to +100
260 for 10 sec
260
3.5
80
6.0
3.0
150
1.41
Units
°C
°C
°C
mW
mW/°C
mA
V
A
mW
mW/°C
8/9/00
200046A
HIGH VOLTAGE
PHOTOTRANSISTOR OPTOCOUPLERS
H11D1, H11D2, H11D3, H11D4, 4N38
ABSOLUTE MAXIMUM RATINGS
(Cont.)
Parameter
DETECTOR
*Power Dissipation @ T
A
= 25°C
Derate linearly above 25°C
H11D1 - H11D2
*Collector to Emitter Voltage
H11D3 - H11D4
4N38
H11D1 - H11D2
*Collector Base Voltage
H11D3 - H11D4
4N38
*Emitter to Collector Voltage
Collector Current (Continuous)
H11D1 - H11D2
H11D3 - H11D4
V
ECO
V
CBO
V
CER
P
D
Symbol
Value
300
4.0
300
200
80
300
200
80
7
100
mA
V
Units
mW
mW/°C
ELECTRICAL CHARACTERISTICS
Characteristic
EMITTER
*Forward Voltage
Forward Voltage Temp.
Coefficient
Reverse Breakdown Voltage
Junction Capacitance
*Reverse Leakage Current
DETECTOR
*Breakdown Voltage
Collector to Emitter
*Collector to Base
Emitter to Base
Emitter to Collector
*Leakage Current
Collector to Emitter
(R
BE
= 1 M")
(T
A
= 25°C Unless otherwise specified.)
INDIVIDUAL COMPONENT CHARACTERISTICS
Test Conditions
(I
F
= 10 mA)
Symbol
V
F
!V
F
!T
A
BV
R
C
J
I
R
BV
CER
BV
CEO
BV
CBO
BV
EBO
BV
ECO
Device
ALL
ALL
ALL
ALL
ALL
ALL
H11D1/2
H11D3/4
4N38
H11D1/2
H11D3/4
4N38
4N38
ALL
H11D1/2
I
CER
H11D3/4
I
CEO
4N38
6
Min
Typ**
1.15
-1.8
25
50
65
0.05
Max
1.5
Unit
V
mV/°C
V
pF
pF
µA
(I
R
= 10 µA)
(V
F
= 0 V, f = 1 MHz)
(V
F
= 1 V, f = 1 MHz)
(V
R
= 6 V)
(R
BE
= 1 M")
(I
C
= 1.0 mA, I
F
= 0)
(No R
BE
) (I
C
= 1.0 mA)
(I
C
= 100 µA, I
F
= 0)
10
(I
E
= 100 µA , I
F
= 0)
(V
CE
= 200 V, I
F
= 0, T
A
= 25°C)
(V
CE
= 200 V, I
F
= 0, T
A
= 100°C)
(V
CE
= 100 V, I
F
= 0, T
A
= 25°C)
(V
CE
= 100 V, I
F
= 0, T
A
= 100°C)
(No R
BE
) (V
CE
= 60 V, I
F
= 0, T
A
= 25°C)
300
200
80
300
200
80
7
7
V
10
100
250
100
250
50
nA
µA
nA
µA
nA
Notes
* Parameters meet or exceed JEDEC registered data (for 4N38 only)
** All typical values at T
A
= 25°C
8/9/00
200046A
HIGH VOLTAGE
PHOTOTRANSISTOR OPTOCOUPLERS
H11D1, H11D2, H11D3, H11D4, 4N38
TRANSFER CHARACTERISTICS
DC Characteristic
EMITTER
Current Transfer Ratio
Collector to Emitter
(I
F
= 10 mA, V
CE
= 10 V)
(R
BE
= 1 M")
(I
F
= 10 mA, V
CE
= 10 V)
(I
F
= 10 mA, I
C
= 0.5 mA)
*Saturation Voltage
(R
BE
= 1 M")
(I
F
= 20 mA, I
C
= 4 mA)
V
CE (SAT)
CTR
Test Conditions
Symbol
Device
H11D1
H11D2
H11D3
H11D4
4N38
H11D1/2/3/4
4N38
1 (10)
2 (20)
0.1
0.40
1.0
V
2 (20)
mA (%)
Min
Typ**
Max
Unit
TRANSFER CHARACTERISTICS
Characteristic
SWITCHING TIMES
Non-Saturated Turn-on Time
Turn-off Time
Test Conditions
(V
CE
=10 V, I
CE
= 2 mA)
(R
L
= 100
")
Symbol
t
on
t
off
Device
ALL
ALL
Min
Typ**
5
5
Max
Unit
µs
ISOLATION CHARACTERISTICS
Characteristic
Isolation Voltage
Isolation Resistance
Isolation Capacitance
Test Conditions
(I
I-O
#$1
µA, 1 min.)
(V
I-O
= 500 VDC)
(f = 1 MHz)
Symbol
V
ISO
R
ISO
C
ISO
Device
ALL
ALL
ALL
Min
5300
7500
10
11
0.5
Typ**
Max
Unit
(V
AC
RMS)
(V
AC
PEAK)
"
pF
Notes
* Parameters meet or exceed JEDEC registered data (for 4N38 only)
** All typical values at T
A
= 25°C
Fig.1 LED Forward Voltage vs. Forward Current
1.8
1.7
Fig.2 Normalized Output Characteristics
NORMALIZED I
CER
- OUTPUT CURRENT
Normalized to:
V
CE
= 10 V
I
F
= 10 mA
R
BE
= 10
6
Ω
T
A
= 25˚C
I
F
= 50 mA
1
I
F
= 10 mA
V
F
- FORWARD VOLTAGE (V)
10
1.6
1.5
1.4
1.3
T
A
= 25˚C
1.2
1.1
1.0
1
T
A
= 100˚C
10
100
T
A
= 55˚C
I
F
= 5 mA
0.1
0.01
0.1
1
10
100
I
F
- LED FORWARDCURRENT (mA)
V
CE
- COLLECTOR VOLTAGE (V)
8/9/00
200046A
HIGH VOLTAGE
PHOTOTRANSISTOR OPTOCOUPLERS
H11D1, H11D2, H11D3, H11D4, 4N38
Fig.3 Normalized Output Current vs. LED Input Current
10
Fig.4 Normalized Output Current vs. Temperature
NORMALIZED I
CER
- OUTPUT CURRENT
Normalized to:
V
CE
= 10 V
I
F
= 10 mA
R
BE
= 10
6
Ω
T
A
= 25˚C
NORMALIZED I
CER
- OUTPUT CURRENT
Normalized to:
V
CE
= 10 V
I
F
= 10 mA
R
BE
= 10
6
Ω
T
A
= 25˚C
1
I
F
= 20 mA
I
F
= 10 mA
1
I
F
= 5 mA
0.1
0.01
1
10
0.1
-60
-40
-20
0
20
40
60
80
100
I
F
- LED INPUT CURRENT (mA)
T
A
- AMBIENT TEMPERATURE (˚C)
Fig.5 Normalized Dark Current vs. Ambient Temperature
NORMALIZED I
CBO
- COLLECTOR-BASE CURRENT
10
9
8
7
6
5
4
3
2
1
Normalized to:
V
CE
= 100 V
R
BE
= 10
6
Ω
T
A
= 25˚C
Normalized Collector-Base Current vs. Temperature
Normalized to:
V
CE
= 10 V
I
F
= 10 mA
R
BE
= 10
6
Ω
T
A
= 25˚C
NORMALIZED I
CER
- DARK CURRENT
10000
I
F
= 50 mA
1000
V
CE
= 300 V
100
V
CE
= 100 V
V
CE
= 50 V
10
1
I
F
= 10 mA
0.1
10
20
30
40
50
60
70
80
90
100
110
0
-60
I
F
= 5 mA
-40
-20
0
20
40
60
80
100
T
A
- AMBIENT TEMPERATURE (˚C)
T
A
- AMBIENT TEMPERATURE (˚C)
8/9/00
200046A
京公网安备 11010802033920号
EEWORLD
