This product has been retired and is not available for designs. For new and current designs,
S29GL064A supersedes Am29LV640MT/B and is the factory-recommended migration path. Please
refer to the S29GL064A datasheet for specifications and ordering information. Availability of this doc-
ument is retained for reference and historical purposes only.
Continuity of Specifications
There is no change to this data sheet as a result of offering the device as a Spansion product. Any
changes that have been made are the result of normal data sheet improvement and are noted in the
document revision summary.
For More Information
Please contact your local sales office for additional information about Spansion memory solutions.
Publication Number
26190
Revision
C
Amendment
8
Issue Date
February 1, 2007
THIS PAGE LEFT INTENTIONALLY BLANK.
DATA SHEET
Am29LV640MT/B
64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit™
3.0 Volt-only Boot Sector Flash Memory
This product has been retired and is not available for designs. For new and current designs, S29GL064A supersedes Am29LV640M T/B and is the factory-recommended migration path.
Please refer to the S29GL064A datasheet for specifications and ordering information. Availability of this document is retained for reference and historical purposes only.
DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
Single power supply operation
— 3 V for read, erase, and program operations
Manufactured on 0.23 µm MirrorBit process
technology
Secured Silicon Sector region
— 128-word/256-byte sector for permanent, secure
identification through an 8-word/16-byte random
Electronic Serial Number, accessible through a
command sequence
— Can be programmed and locked at the factory or by
the customer
Flexible sector architecture
— One hundred twenty-seven 32 Kword/64-Kbyte
sectors
— Eight 4 Kword/8 Kbyte boot sectors
Compatibility with JEDEC standards
— Provides pinout and software compatibility for
single-power supply flash, and superior inadvertent
write protection
Minimum 100,000 erase cycle guarantee per sector
20-year data retention at 125°C
PERFORMANCE CHARACTERISTICS
High performance
— 90 ns access time
— 25 ns page read times
— 0.5 s typical sector erase time
— 22 µs typical effective write buffer word programming
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