AO4813
Dual P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4813 uses advanced trench technology to
provide excellent R
DS(ON)
, and low gate charge. This
device is suitable for use as a load switch or in PWM
applications.
Standard product AO4813 is Pb-free
(meets ROHS & Sony 259 specifications). AO4813L
is a Green Product ordering option. AO4813 and
AO4813L are electrically identical.
Features
V
DS
(V) = -30V
I
D
= -7.1 A
(V
GS
= -10V)
R
DS(ON)
< 25mΩ (V
GS
= -10V)
R
DS(ON)
< 40mΩ (V
GS
= -4.5V)
SOIC-8
Top View
S2
G2
S1
G1
1
2
3
4
8
7
6
5
D2
D2
D1
D1
D1
D2
G1
S1
G2
S2
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
B
T
A
=25°C
Power Dissipation
A
Maximum
-30
±20
-7.1
-5.6
-30
2
1.28
-55 to 150
Units
V
V
A
T
A
=25°C
T
A
=70°C
I
D
I
DM
P
D
T
J
, T
STG
T
A
=70°C
W
°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
48
74
35
Max
62.5
110
40
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AO4813
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Symbol
Parameter
Conditions
I
D
=-250µA, V
GS
=0V
V
DS
=-24V, V
GS
=0V
T
J
=55°C
V
DS
=0V, V
GS
=±20V
V
DS
=V
GS
I
D
=-250µA
V
GS
=-10V, V
DS
=-5V
V
GS
=-10V, I
D
=-7.1A
R
DS(ON)
g
FS
V
SD
I
S
Static Drain-Source On-Resistance
V
GS
=-4.5V, I
D
=-5.6A
Forward Transconductance
V
DS
=-5V, I
D
=-7.1A
Diode Forward Voltage
I
S
=-1A,V
GS
=0V
Maximum Body-Diode Continuous Current
T
J
=125°C
-1.4
-30
20
27
29
19.6
-0.7
-1
-4.2
1573
V
GS
=0V, V
DS
=-15V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
319
211
6.7
30.9
V
GS
=-10V, V
DS
=-15V, I
D
=-7.1A
16.1
8
4.4
9.5
V
GS
=-10V, V
DS
=-15V, R
L
=2.2Ω,
R
GEN
=3Ω
I
F
=-7.1A, dI/dt=100A/µs
8
44.2
22.2
25.5
14.7
25
33
40
-2
Min
-30
-1
-5
±100
-2.7
Typ
Max
Units
V
µA
nA
V
A
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Q
g
(10V) Total Gate Charge (10V)
Q
g
(4.5V) Total Gate Charge (4.5V)
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=-7.1A, dI/dt=100A/µs
A: The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C.
The value in any given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θJA
is the sum of the thermal impedence from junction to lead R
θJL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
µs
pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
SOA curve provides a single pulse rating.
Rev 3 : Sept 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4813
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
30
-10V
25
20
-I
D
(A)
-I
D
(A)
15
10
5
0
0
1
2
3
4
5
-V
DS
(Volts)
Fig 1: On-Region Characteristics
40
Normalized On-Resistance
35
R
DS(ON)
(m
Ω
)
30
25
V
GS
=-10V
20
15
10
0
5
10
15
20
25
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
60
50
R
DS(ON)
(m
Ω
)
40
125°C
30
20
10
3
4
5
6
7
8
9
10
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
I
D
=-7.1A
1.0E+01
1.0E+00
1.0E-01
-I
S
(A)
1.0E-02
1.0E-03
1.0E-04
25°C
1.0E-05
1.0E-06
0.0
0.2
0.4
0.6
0.8
1.0
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
25°C
125°C
V
GS
=-4.5V
1.60
I
D
=-7.1A
1.40
V
GS
=-10V
-3.5V
V
GS
=-3V
-5V
-4V
20
15
10
5
0
1
1.5
2
2.5
3
3.5
4
4.5
5
-V
GS
(Volts)
Figure 2: Transfer Characteristics
125°C
25°C
30
25
V
DS
=-5V
1.20
V
GS
=-4.5V
I
D
=-5.6A
1.00
0.80
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Alpha & Omega Semiconductor, Ltd.
AO4813
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
10
8
-V
GS
(Volts)
6
4
2
0
0
4
8
12
16
20
24
28
32
-Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
DS
=-15V
I
D
=-7.1A
Capacitance (pF)
2250
2000
1750
1500
1250
1000
750
500
250
0
0
5
10
15
20
25
30
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
oss
C
rss
C
iss
100.0
T
J(Max)
=150°C, T
A
=25°C
R
DS(ON)
limited
0.1s
10µs
100µs
1ms
10ms
40
30
Power (W)
20
10
T
J(Max)
=150°C
T
A
=25°C
-I
D
(Amps)
10.0
1.0
1s
10s
DC
0.1
0.1
1
-V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
100
0
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
Z
θJA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=62.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
P
D
T
on
T
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
100
1000
Alpha & Omega Semiconductor, Ltd.
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