SIGC156T120R2C
IGBT Chip in NPT-technology
FEATURES:
•
1200V NPT technology 200µm chip
•
low turn-off losses
•
short tail current
•
positive temperature coefficient
•
easy paralleling
•
integrated gate resistor
This chip is used for:
•
power module
BSM100GD120DN2
Applications:
•
drives
C
G
E
Chip Type
V
CE
I
Cn
Die Size
12.59 X 12.59 mm
2
Package
sawn on foil
Ordering Code
Q67041-
A4661-A003
SIGC156T120R2C 1200V 100A
MECHANICAL PARAMETER:
Raster size
Emitter pad size
Gate pad size
Area total / active
Thickness
Wafer size
Flat position
Max.possible chips per wafer
Passivation frontside
Emitter metallization
Collector metallization
Die bond
Wire bond
Reject Ink Dot Size
Recommended Storage Environment
12.59 X 12.59
8 x ( 3.98 x 2.38 )
1.46 x 0.8
158.5 / 132.6
200
150
90
82 pcs
Photoimide
3200 nm Al Si 1%
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
electrically conductive glue or solder
Al, <500µm
∅
0.65mm ; max 1.2mm
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
µm
mm
2
mm
grd
Edited by INFINEON Technologies AI PS DD HV3, L 7181-M, Edition 2, 03.09.2003
SIGC156T120R2C
MAXIMUM RATINGS:
Parameter
Collector-emitter voltage,
T
j=25
°C
DC collector current, limited by T
jmax
Pulsed collector current, t
p
limited by T
jmax
Gate emitter voltage
Operating junction and storage temperature
1)
Symbol
V
CE
I
C
I
cpuls
V
GE
T
j
, T
s t g
Value
1200
1)
Unit
V
A
A
V
°C
300
±20
-55 ... +150
depending on thermal properties of assembly
STATIC CHARACTERISTICS (tested on chip),
T
j=25
°C,
unless otherwise specified:
Parameter
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Integrated gate resistor
Symbol
V
(BR)CES
V
CE(sat)
V
GE(th)
I
CES
I
GES
R
Gint
Conditions
min.
V
GE
=0V , I
C
=5mA
V
GE
=15V, I
C
=100A
I
C
=4mA , V
GE
=V
CE
V
CE
=1200V , V
GE
=0V
V
CE
=0V , V
GE
=20V
5
1200
2.0
4.5
2.5
5.5
3.0
6.5
600
600
µA
nA
Ω
V
Value
typ.
max.
Unit
ELECTRICAL CHARACTERISTICS
(tested at component):
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Symbol
C
i s s
C
o s s
C
r s s
Conditions
V
C E
= 2 5 V ,
V
GE
= 0 V ,
f
=1MHz
Value
min.
-
-
-
typ.
6.5
1
0.5
max.
-
-
-
Unit
nF
SWITCHING CHARACTERISTICS
(tested at component), Inductive Load
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
1)
Symbol
t
d(on)
t
r
t
d(off)
t
f
Conditions
1)
T
j
= 1 2 5
°
C
V
C C
=600V,
I
C
=100A,
V
G E
=+15/ - 1 5 V ,
R
G
= 6 . 8
Ω
Value
min.
-
-
-
-
typ.
160
80
400
70
max.
320
160
520
100
Unit
ns
values also influenced by parasitic L- and C- in measurement and package.
Edited by INFINEON Technologies AI PS DD HV3, L 7181-M, Edition 2, 03.09.2003
SIGC156T120R2C
CHIP DRAWING:
Edited by INFINEON Technologies AI PS DD HV3, L 7181-M, Edition 2, 03.09.2003
SIGC156T120R2C
FURTHER ELECTRICAL CHARACTERISTICS:
This chip data sheet refers to the
device data sheet
BSM100GD120DN2
ECONOPACK3
DESCRIPTION:
AQL 0,65 for visual inspection according to failure catalog
Electrostatic Discharge Sensitive Device according to MIL-STD 883
Test-Normen Villach/Prüffeld
Published by
Infineon Technologies AG,
Bereich Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 2002
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
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address list).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support
and / or maintain and sustain and / or protect human life. If they fail, it is reasonable to assume that the
health of the user or other persons may be endangered.
Edited by INFINEON Technologies AI PS DD HV3, L 7181-M, Edition 2, 03.09.2003
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