MA4E2502 Series
SURMOUNT
TM
Low, Medium, and High
Barrier Silicon Schottky Diodes
Features
•
Extremely Low Parasitic Capacitance and In-
ductance
•
Surface Mountable in Microwavable Circuits, No
Wirebonds Required
•
Rugged HMIC Construction with Polyimide
Scratch Protection
•
Reliable, Multilayer Metalization with a Diffusion
Barrier, 100% Stabilization Bake (300°C, 16
hours)
•
Lower Susceptibility to ESD Damage
•
RoHS Compliant
M/A-COM Products
Rev. V9
The MA4E2502 Family of Surmount Schottky di-
odes are recommended for use in microwave cir-
cuits through Ku band frequencies for lower power
applications such as mixers, sub-harmonic mixers,
detectors, and limiters. The HMIC construction
facilitates the direct replacement of more fragile
beam lead diodes with the corresponding Sur-
mount diode, which can be connected to a hard or
soft substrate circuit with solder.
Case Style 1246
Description and Applications
The MA4E2502 SURMOUNT
TM
Series Diodes are
Silicon Low, Medium, and High Barrier Schottky
Devices fabricated with the patented Heterolithic
Microwave Integrated Circuit (HMIC) process.
HMIC circuits consist of Silicon pedestals which
form diodes or via conductors embedded in a glass
dielectric, which acts as the low dispersion, micro-
strip transmission medium. The combination of
silicon and glass allows HMIC devices to have ex-
cellent loss and power dissipation characteristics in
a low profile, reliable device.
The Surmount Schottky devices are excellent
choices for circuits requiring the small parasitics of
a beam lead device coupled with the superior me-
chanical performance of a chip. The Surmount
structure employs very low resistance silicon vias
to connect the Schottky contacts to the metalized
mounting pads on the bottom surface of the chip.
These devices are reliable, repeatable, and a lower
cost performance solution to conventional devices.
They have lower susceptibility to electrostatic dis-
charge than conventional beam lead Schottky di-
odes.
The multilayer metallization employed in the fabri-
cation of the Surmount Schottky junctions includes
a platinum diffusion barrier, which permits all de-
vices to be subjected to a 16-hour non-operating
stabilization bake at 300°C.
The “0502” outline allows for Surface Mount place-
ment and multi-functional polarity orientations.
1
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
•
North America
Tel: 800.366.2266 •
Europe
Tel: +353.21.244.6400
is considering for development. Performance is based on target specifications, simulated results,
•
India
Tel: +91.80.43537383
•
China
Tel: +86.21.2407.1588
and/or prototype measurements. Commitment to develop is not guaranteed.
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
DIM
A
B
C
D Sq.
E
INCHES
MIN.
0.0445
0.0169
0.0040
0.0128
0.0128
MILLIMETERS
MIN.
1.130
0.430
0.102
0.325
0.325
MAX.
0.0465
0.0189
0.0080
0.0148
0.0148
MAX.
1.180
0.480
0.203
0.375
0.375
MA4E2502 Series
SURMOUNT
TM
Low, Medium, and High
Barrier Silicon Schottky Diodes
Electrical Specifications @ 25°C
Model
Number
MA4E2502L
M/A-COM Products
Rev. V9
Type
Recommended
Freq. Range
DC - 18 GHz
Vf @ 1 mA
(mV)
330 Max
300 Typ
470 Max
420 Typ
700 Max
650 Typ
Vb @ 10 uA
(V)
3 Min
5 Typ
3 Min
5 Typ
3 Min
5 Typ
Ct @ 0 V
(pF)
0.12 Max
0.10 Typ
0.12 Max
0.10 Typ
0.12 Max
0.10 Typ
Rt Slope Resistance
(Vf1-Vf2)/(10.5mA-9.5mA)
(Ω)
16 Typ
20 Max
12 Typ
18 Max
11 Typ
15 Max
Low Barrier
Medium
Barrier
High Barrier
MA4E2502M
DC - 18 GHz
MA4E2502H
DC - 18 GHz
1. Rt is the dynamic slope resistance where Rt = Rs + Rj, where Rj = 26 / Idc (Idc is in mA)
Handling
All semiconductor chips should be handled with
care to avoid damage or contamination from per-
spiration and skin oils. The use of plastic tipped
tweezers or vacuum pickups is strongly recom-
mended for individual components. The top sur-
face of the die has a protective polyimide coating to
minimize damage.
The rugged construction of these Surmount de-
vices allows the use of standard handling and die
attach techniques. It is important to note that in-
dustry standard electrostatic discharge (ESD) con-
trol is required at all times, due to the sensitive na-
ture of Schottky junctions.
Bulk handling should insure that abrasion and me-
chanical shock are minimized.
Die Bonding
Die attach for these devices is made simple
through the use of surface mount die attach tech-
nology. Mounting pads are conveniently located on
the bottom surface of these devices, and are oppo-
site the active junction. The devices are well suited
for high temperature solder attachment onto hard
substrates. 80Au/20Sn and Sn63/Pb37 solders are
acceptable for usage. Die attach with Electrically
Conductive Silver Epoxy is Not Recommended.
For Hard substrates, we recommend utilizing a
vacuum tip and force of 60 to 100 grams applied
uniformly to the top surface of the device, using a
hot gas bonder with equal heat applied across the
bottom mounting pads of the device. When solder-
ing to soft substrates, it is recommended to use a
lead-tin interface at the circuit board mounting
pads. Position the die so that its mounting pads
are aligned with the circuit board mounting pads.
Reflow the solder paste by applying equal heat to
the circuit at both die-mounting pads. The solder
joint must Not be made one at a time, creating un-
equal heat flow and thermal stress. Solder reflow
should Not be performed by causing heat to flow
through the top surface of the die. Since the HMIC
glass is transparent, the edges of the mounting
pads can be visually inspected through the die after
die attach is completed.
Absolute Maximum Ratings @ 25°C
(unless otherwise noted)
1
Parameter
Operating Temperature
Storage Temperature
Junction Temperature
Forward Current
Reverse Voltage
RF C.W. Incident Power
RF & DC Dissipated Power
Electrostatic Discharge
2
( ESD ) Classification
2
2. Human Body Model
Absolute Maximum
-40°C to +125°C
-40°C to +150°C
+175°C
20 mA
5V
+20 dBm
50 mW
Class 0
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
•
North America
Tel: 800.366.2266 •
Europe
Tel: +353.21.244.6400
is considering for development. Performance is based on target specifications, simulated results,
•
India
Tel: +91.80.43537383
•
China
Tel: +86.21.2407.1588
and/or prototype measurements. Commitment to develop is not guaranteed.
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
MA4E2502 Series
SURMOUNT
TM
Low, Medium, and High
Barrier Silicon Schottky Diodes
Applications Section
MA4E2502L-1246
Frequency (GHz) vs. Output Voltage (V)
10
-20 dBm
Output Voltage (V)
1
-10 dBm
0 dBm
+10 dBm
+20 dBm
0.1
M/A-COM Products
Rev. V9
0.01
8
11
14
17
20
23
Frequency (GHz)
MA4E2502L-1246
Input Pow er (dBm ) vs. Output Voltage (V)
10
Output Voltage (V)
1
8 GHz
18 GHz
0.1
23 GHz
0.01
-20
-15
-10
-5
Input Pow er (dBm )
0
5
10
The MA4E2502L-1246 chip was evaluated in a detector circuit in which the Schottky diode terminates a
50 ohm transmission line on a duroid substrate. The chip was attached to the terminal of a 3.5mm
connector and the output voltage was measured through a bias tee on a voltmeter.
Matching was not attempted.
3
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
•
North America
Tel: 800.366.2266 •
Europe
Tel: +353.21.244.6400
is considering for development. Performance is based on target specifications, simulated results,
•
India
Tel: +91.80.43537383
•
China
Tel: +86.21.2407.1588
and/or prototype measurements. Commitment to develop is not guaranteed.
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
MA4E2502 Series
SURMOUNT
TM
Low, Medium, and High
Barrier Silicon Schottky Diodes
MA4E2502L Low Barrier SPICE PARAMETERS
Is
(nA)
26
M/A-COM Products
Rev. V9
Rs
(Ω)
12.8
N
1.20
Cj0
(pF)
1.0 E-2
M
0.5
Ik
(mA)
14
Cjpar
(pF)
9.0 E-2
Vj
(V)
8.0 E-2
FC
0.5
BV
(V)
5.0
IBV
(mA)
1.0 E-2
MA4E2502M Medium Barrier SPICE PARAMETERS
Is
(mA)
5 E-1
Rs
(Ω)
9.6
N
1.20
Cj0
(pF)
1.0 E-02
M
0.5
Ik
(mA)
10
Cjpar
(pF)
9.0 E-2
Vj
(V)
8.0 E-2
FC
0.5
BV
(V)
5.0
IBV
(mA)
1.0 E-2
MA4E2502H High Barrier SPICE PARAMETERS
Is
(mA)
5.7 E-1
Rs
(Ω)
6.5
N
1.20
Cj0
(pF)
1.0 E-02
M
0.5
Ik
(mA)
4
Cjpar
(pF)
9.0 E-2
Vj
(V)
8.0 E-2
FC
0.5
BV
(V)
5.0
IBV
(mA)
1.0 E-2
Circuit Mounting Dimensions (Inches)
4
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
•
North America
Tel: 800.366.2266 •
Europe
Tel: +353.21.244.6400
is considering for development. Performance is based on target specifications, simulated results,
•
India
Tel: +91.80.43537383
•
China
Tel: +86.21.2407.1588
and/or prototype measurements. Commitment to develop is not guaranteed.
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
MA4E2502 Series
SURMOUNT
TM
Low, Medium, and High
Barrier Silicon Schottky Diodes
Ordering Information
Part Number
MA4E2502L-1246W
MA4E2502L-1246
MADS-002502-1246LP
MA4E2502M-1246W
MA4E2502M-1246
MADS-002502-1246MP
MA4E2502H-1246W
MA4E2502H-1246
MADS-002502-1246HP
M/A-COM Products
Rev. V9
Package
Wafer on Frame
Die in Carrier
Pocket Tape on Reel
Wafer on Frame
Die in Carrier
Pocket Tape on Reel
Wafer on Frame
Die in Carrier
Pocket Tape on Reel
Standard Quantity
*
100
3000
*
100
3000
*
100
3000
* Call factory for standard quantities for full wafers on frames.
MA4E2502 Diode Schematic
Schematic Values
Model Number
MA4E2502L
MA4E2502M
MA4E2502H
5
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
•
North America
Tel: 800.366.2266 •
Europe
Tel: +353.21.244.6400
is considering for development. Performance is based on target specifications, simulated results,
•
India
Tel: +91.80.43537383
•
China
Tel: +86.21.2407.1588
and/or prototype measurements. Commitment to develop is not guaranteed.
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
Ls
(nH)
0.45
0.45
0.45
Rs
(Ω)
12.8
9.6
6.5
Rj
(Ω)
26 / Idc (mA)
26 / Idc (mA)
26 / Idc (mA)
Ct
(pF)
0.10
0.10
0.10
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