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MA4E2502H-1246W

Description
Mixer Diode, High Barrier, KU Band, Silicon, CASE 1246, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size107KB,5 Pages
ManufacturerMACOM
Websitehttp://www.macom.com
Environmental Compliance
Download Datasheet Parametric Compare View All

MA4E2502H-1246W Overview

Mixer Diode, High Barrier, KU Band, Silicon, CASE 1246, 2 PIN

MA4E2502H-1246W Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionR-XBCC-N2
Contacts2
Manufacturer packaging codeCASE 1246
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSINGLE
Maximum diode capacitance0.12 pF
Diode component materialsSILICON
Diode typeMIXER DIODE
frequency bandKU BAND
JESD-30 codeR-XBCC-N2
Number of components1
Number of terminals2
Maximum operating frequency18 GHz
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formCHIP CARRIER
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Pulse input maximum power0.1 W
Certification statusNot Qualified
surface mountYES
technologySCHOTTKY
Terminal formNO LEAD
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Schottky barrier typeHIGH BARRIER
Base Number Matches1
MA4E2502 Series
SURMOUNT
TM
Low, Medium, and High
Barrier Silicon Schottky Diodes
Features
Extremely Low Parasitic Capacitance and In-
ductance
Surface Mountable in Microwavable Circuits, No
Wirebonds Required
Rugged HMIC Construction with Polyimide
Scratch Protection
Reliable, Multilayer Metalization with a Diffusion
Barrier, 100% Stabilization Bake (300°C, 16
hours)
Lower Susceptibility to ESD Damage
RoHS Compliant
M/A-COM Products
Rev. V9
The MA4E2502 Family of Surmount Schottky di-
odes are recommended for use in microwave cir-
cuits through Ku band frequencies for lower power
applications such as mixers, sub-harmonic mixers,
detectors, and limiters. The HMIC construction
facilitates the direct replacement of more fragile
beam lead diodes with the corresponding Sur-
mount diode, which can be connected to a hard or
soft substrate circuit with solder.
Case Style 1246
Description and Applications
The MA4E2502 SURMOUNT
TM
Series Diodes are
Silicon Low, Medium, and High Barrier Schottky
Devices fabricated with the patented Heterolithic
Microwave Integrated Circuit (HMIC) process.
HMIC circuits consist of Silicon pedestals which
form diodes or via conductors embedded in a glass
dielectric, which acts as the low dispersion, micro-
strip transmission medium. The combination of
silicon and glass allows HMIC devices to have ex-
cellent loss and power dissipation characteristics in
a low profile, reliable device.
The Surmount Schottky devices are excellent
choices for circuits requiring the small parasitics of
a beam lead device coupled with the superior me-
chanical performance of a chip. The Surmount
structure employs very low resistance silicon vias
to connect the Schottky contacts to the metalized
mounting pads on the bottom surface of the chip.
These devices are reliable, repeatable, and a lower
cost performance solution to conventional devices.
They have lower susceptibility to electrostatic dis-
charge than conventional beam lead Schottky di-
odes.
The multilayer metallization employed in the fabri-
cation of the Surmount Schottky junctions includes
a platinum diffusion barrier, which permits all de-
vices to be subjected to a 16-hour non-operating
stabilization bake at 300°C.
The “0502” outline allows for Surface Mount place-
ment and multi-functional polarity orientations.
1
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
North America
Tel: 800.366.2266 •
Europe
Tel: +353.21.244.6400
is considering for development. Performance is based on target specifications, simulated results,
India
Tel: +91.80.43537383
China
Tel: +86.21.2407.1588
and/or prototype measurements. Commitment to develop is not guaranteed.
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
DIM
A
B
C
D Sq.
E
INCHES
MIN.
0.0445
0.0169
0.0040
0.0128
0.0128
MILLIMETERS
MIN.
1.130
0.430
0.102
0.325
0.325
MAX.
0.0465
0.0189
0.0080
0.0148
0.0148
MAX.
1.180
0.480
0.203
0.375
0.375

MA4E2502H-1246W Related Products

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Description Mixer Diode, High Barrier, KU Band, Silicon, CASE 1246, 2 PIN Mixer Diode, Medium Barrier, KU Band, Silicon, CASE 1246, 2 PIN Mixer Diode, Low Barrier, KU Band, Silicon, CASE 1246, 2 PIN Mixer Diode, Low Barrier, KU Band, Silicon, CASE 1246, 2 PIN Mixer Diode, High Barrier, KU Band, Silicon, CASE 1246, 2 PIN Mixer Diode, Medium Barrier, KU Band, Silicon, CASE 1246, 2 PIN Mixer Diode, Medium Barrier, KU Band, Silicon, CASE 1246, 2 PIN
Is it Rohs certified? conform to conform to incompatible conform to conform to conform to conform to
package instruction R-XBCC-N2 R-XBCC-N2 R-XBCC-N2 R-XBCC-N2 R-XBCC-N2 R-XBCC-N2 R-XBCC-N2
Contacts 2 2 2 2 2 2 2
Manufacturer packaging code CASE 1246 CASE 1246 CASE 1246 CASE 1246 CASE 1246 CASE 1246 CASE 1246
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Maximum diode capacitance 0.12 pF 0.12 pF 0.12 pF 0.12 pF 0.12 pF 0.12 pF 0.12 pF
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Diode type MIXER DIODE MIXER DIODE MIXER DIODE MIXER DIODE MIXER DIODE MIXER DIODE MIXER DIODE
frequency band KU BAND KU BAND KU BAND KU BAND KU BAND KU BAND KU BAND
JESD-30 code R-XBCC-N2 R-XBCC-N2 R-XBCC-N2 R-XBCC-N2 R-XBCC-N2 R-XBCC-N2 R-XBCC-N2
Number of components 1 1 1 1 1 1 1
Number of terminals 2 2 2 2 2 2 2
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form CHIP CARRIER CHIP CARRIER CHIP CARRIER CHIP CARRIER CHIP CARRIER CHIP CARRIER CHIP CARRIER
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT APPLICABLE
Pulse input maximum power 0.1 W 0.1 W 0.1 W 0.1 W 0.1 W 0.1 W 0.1 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES YES YES YES
technology SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY
Terminal form NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT APPLICABLE
Schottky barrier type HIGH BARRIER MEDIUM BARRIER LOW BARRIER LOW BARRIER HIGH BARRIER MEDIUM BARRIER MEDIUM BARRIER
Base Number Matches 1 1 1 1 1 1 1
Maximum operating frequency 18 GHz 18 GHz 18 GHz - - - 18 GHz
Maximum operating temperature 150 °C 150 °C 150 °C 125 °C - - 150 °C
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