AK93C65BL datasheet, PDF - EEWORLD Datasheet

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AK93C65BL: Description1K / 2K / 4K / 8Kbit Serial CMOS EEPROM; Categorystorage storage; File Size178KB，14 Pages; ManufacturerAKM [Asahi Kasei Microsystems]

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AK93C65BL Overview

1K / 2K / 4K / 8Kbit Serial CMOS EEPROM

AK93C65BL Parametric

Parameter Name	Attribute value
Maker	AKM [Asahi Kasei Microsystems]
Parts packaging code	SON
package instruction	VSON, FL8,.1,25
Contacts	8
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	100K ENDURANCE CYCLES; 10 YEARS DATA RETENTION
Data retention time - minimum	100
Durability	100000 Write/Erase Cycles
JESD-30 code	R-PDSO-N8
length	2.9 mm
memory density	4096 bi
Memory IC Type	EEPROM
memory width	16
Number of functions	1
Number of terminals	8
word count	256 words
character code	256
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	256X16
Package body material	PLASTIC/EPOXY
encapsulated code	VSON
Encapsulate equivalent code	FL8,.1,25
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, VERY THIN PROFILE
Parallel/Serial	SERIAL
power supply	2/5 V
Certification status	Not Qualified
Maximum seat height	0.9 mm
Serial bus type	MICROWIRE
Maximum standby current	8e-7 A
Maximum slew rate	0.004 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	1.8 V
Nominal supply voltage (Vsup)	2.5 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal form	NO LEAD
Terminal pitch	0.65 mm
Terminal location	DUAL
width	2.8 mm
Maximum write cycle time (tWC)	10 ms
write protect	HARDWARE/SOFTWARE
Base Number Matches	1

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ASAHI KASEI

[AK93C45B/55B/65B/75B]

AK93C45B / 55B / 65B / 75B

1K / 2K / 4K / 8Kbit Serial CMOS EEPROM

Features

ADVANCED CMOS EEPROM TECHNOLOGY

READ/WRITE NON-VOLATILE MEMORY

WIDE VCC OPERATION : VCC = 1.8V to 5.5V

AK93C45B

・・1024

bits, 64 x 16 organization

AK93C55B

・・2048

bits, 128 x 16 organization

AK93C65B

・・4096

bits, 256 x 16 organization

AK93C75B

・・8192

bits, 512 x 16 organization

SERIAL INTERFACE

- Interfaces with popular microcontrollers and standard microprocessors

LOW POWER CONSUMPTION

- 0.8µA Max. Standby

High Reliability

- Endurance

: 100K cycles

- Data Retention : 10 years

Automatic address increment (READ)

Automatic write cycle time-out with auto-ERASE

Busy/Ready status signal

Software controlled write protection

IDEAL FOR LOW DENSITY DATA STORAGE

- Low cost, space saving, 8-pin package (MSOP, SON)

DATA

INSTRUCTION

R/W AMPS

AND

AUTO ERASE

INSTRUCTION

DECODE,

CONTROL

AND

CLOCK

GENERATION

EEPROM

93C45B=1024bit

93C55B=2048bit

93C65B=4096bit

93C75B=8192bit

ADD.

BUFFERS

DECODER

VPP SW

(AK93C55B/65B/75B)

VREF

VPP

GENERATOR

Block Diagram

DAM04E-02

- 1 -

2003/05

ASAHI KASEI

[AK93C45B/55B/65B/75B]

General Description

The AK93C45B/55B/65B/75B is a 1024/2048/4096/8192-bit serial CMOS EEPROM divided into

64/128/256/512 registers of 16 bits each. The AK93C45B/55B/65B/75B has 4 instructions such as

READ, WRITE, EWEN and EWDS. Those instructions control the AK93C45B/55B/65B/75B.

The AK93C45B/55B/65B/75B can operate full function under wide operating voltage range from

1.8V to 5.5V. The charge up circuit is integrated for high voltage generation that is used for write

operation.

A serial interface of AK93C45B/55B/65B/75B, consisting of chip select (CS), serial clock (SK),

data-in (DI) and data-out (DO), can easily be controlled by popular microcontrollers or standard

microprocessors. AK93C45B/55B/65B/75B takes in the write data from data input pin (DI) to a

operation, AK93C45B/55B/65B/75B takes out the read data from a register to data output pin (DO)

synchronously with rising edge of SK.

The DO pin is usually in high impedance state. The DO pin outputs "L" or "H" in case of data

output or Busy/Ready signal output.

Software and Hardware controlled write protection

When VCC is applied to the part, the part automatically powers up in the ERASE/WRITE Disable

state. In the ERASE/WRITE disable state, execution of WRITE instruction is disabled. Before

WRITE instruction is executed, EWEN instruction must be executed. The ERASE/WRITE enable

state continues until EWDS instruction is executed or VCC is removed from the part.

Execution of a read instruction is independent of both EWEN and EWDS instructions.

The PE is internally pulled up to VCC. If the PE is left unconnected, the part will accept WRITE,

EWEN and EWDS instructions.

・・

AK93C55B/65B/75B

Busy/Ready status signal

After a write instruction, the DO output serves as a Busy/Ready status indicator. After the falling

edge of the CS initiates the self-timed programming cycle, the DO indicates the Busy/Ready status

of the chip if the CS is brought high after a minimum of 250ns (Tcs). DO=logical "0" indicates that

programming is still in progress. DO=logical "1" indicates that the register at the address specified

in the instruction has been written with the new data pattern contained in the instruction and the part

is ready for a next instruction.

The Busy/Ready status indicator is only valid when CS is active (high). When CS is low, the DO

output goes into a high impedance state.

The Busy/Ready signal outputs until a start bit (Logic"1") of the next instruction is given to the part.

Type of Products

Model

AK93C45BH

AK93C45BL

AK93C55BH

AK93C55BL

AK93C65BH

AK93C65BL

AK93C75BH

DAM04E-02

- 2 -

Memory size

1K bits

2K bits

4K bits

8K bits

Temp. Range

-40°C to +85°C

VCC

1.8V to 5.5V

Package

8pin Plastic MSOP

8pin Plastic SON

8pin Plastic MSOP

8pin Plastic SON

8pin Plastic MSOP

8pin Plastic SON

8pin Plastic MSOP

2003/05

AK93C65BL Related Products

	AK93C65BL	AK93C45B_03	AK93C75BH	AK93C75B	AK93C55BL	AK93C45BL
Description	1K / 2K / 4K / 8Kbit Serial CMOS EEPROM	1K / 2K / 4K / 8Kbit Serial CMOS EEPROM	1K / 2K / 4K / 8Kbit Serial CMOS EEPROM	1K / 2K / 4K / 8Kbit Serial CMOS EEPROM	1K / 2K / 4K / 8Kbit Serial CMOS EEPROM	1K / 2K / 4K / 8Kbit Serial CMOS EEPROM
Maker	AKM [Asahi Kasei Microsystems]	-	AKM [Asahi Kasei Microsystems]	-	AKM [Asahi Kasei Microsystems]	AKM [Asahi Kasei Microsystems]
Parts packaging code	SON	-	MSOP	-	SON	SON
package instruction	VSON, FL8,.1,25	-	LSSOP, TSSOP8,.16	-	VSON, FL8,.1,25	VSON, FL8,.1,25
Contacts	8	-	8	-	8	8
Reach Compliance Code	unknow	-	unknow	-	unknow	unknown
ECCN code	EAR99	-	EAR99	-	EAR99	EAR99
Other features	100K ENDURANCE CYCLES; 10 YEARS DATA RETENTION	-	100K ENDURANCE CYCLES; 10 YEARS DATA RETENTION	-	100K ENDURANCE CYCLES; 10 YEARS DATA RETENTION	100K ENDURANCE CYCLES; 10 YEARS DATA RETENTION
Data retention time - minimum	100	-	10	-	10	10
Durability	100000 Write/Erase Cycles	-	100000 Write/Erase Cycles	-	100000 Write/Erase Cycles	100000 Write/Erase Cycles
JESD-30 code	R-PDSO-N8	-	R-PDSO-G8	-	R-PDSO-N8	R-PDSO-N8
length	2.9 mm	-	2.95 mm	-	2.9 mm	2.9 mm
memory density	4096 bi	-	8192 bi	-	2048 bi	1024 bit
Memory IC Type	EEPROM	-	EEPROM	-	EEPROM	EEPROM
memory width	16	-	16	-	16	16
Number of functions	1	-	1	-	1	1
Number of terminals	8	-	8	-	8	8
word count	256 words	-	512 words	-	128 words	64 words
character code	256	-	512	-	128	64
Operating mode	SYNCHRONOUS	-	SYNCHRONOUS	-	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	85 °C	-	85 °C	-	85 °C	85 °C
Minimum operating temperature	-40 °C	-	-40 °C	-	-40 °C	-40 °C
organize	256X16	-	512X16	-	128X16	64X16
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	VSON	-	LSSOP	-	VSON	VSON
Encapsulate equivalent code	FL8,.1,25	-	TSSOP8,.16	-	FL8,.1,25	FL8,.1,25
Package shape	RECTANGULAR	-	RECTANGULAR	-	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE, VERY THIN PROFILE	-	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	-	SMALL OUTLINE, VERY THIN PROFILE	SMALL OUTLINE, VERY THIN PROFILE
Parallel/Serial	SERIAL	-	SERIAL	-	SERIAL	SERIAL
power supply	2/5 V	-	2/5 V	-	2/5 V	2/5 V
Certification status	Not Qualified	-	Not Qualified	-	Not Qualified	Not Qualified
Maximum seat height	0.9 mm	-	1.3 mm	-	0.9 mm	0.9 mm
Serial bus type	MICROWIRE	-	MICROWIRE	-	MICROWIRE	MICROWIRE
Maximum standby current	8e-7 A	-	8e-7 A	-	8e-7 A	8e-7 A
Maximum slew rate	0.004 mA	-	0.004 mA	-	0.004 mA	0.004 mA
Maximum supply voltage (Vsup)	5.5 V	-	5.5 V	-	5.5 V	5.5 V
Minimum supply voltage (Vsup)	1.8 V	-	1.8 V	-	1.8 V	1.8 V
Nominal supply voltage (Vsup)	2.5 V	-	2.5 V	-	2.5 V	2.5 V
surface mount	YES	-	YES	-	YES	YES
technology	CMOS	-	CMOS	-	CMOS	CMOS
Temperature level	INDUSTRIAL	-	INDUSTRIAL	-	INDUSTRIAL	INDUSTRIAL
Terminal form	NO LEAD	-	GULL WING	-	NO LEAD	NO LEAD
Terminal pitch	0.65 mm	-	0.65 mm	-	0.65 mm	0.65 mm
Terminal location	DUAL	-	DUAL	-	DUAL	DUAL
width	2.8 mm	-	2.8 mm	-	2.8 mm	2.8 mm
Maximum write cycle time (tWC)	10 ms	-	10 ms	-	10 ms	10 ms
write protect	HARDWARE/SOFTWARE	-	HARDWARE/SOFTWARE	-	HARDWARE/SOFTWARE	SOFTWARE

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