IS64WV25616BLL-10CTLA3 datasheet, PDF

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IS64WV25616BLL-10CTLA3: DescriptionStandard SRAM, 256KX16, 10ns, CMOS, PDSO44, TSOP2-44; Categorystorage; File Size422KB，22 Pages; ManufacturerIntegrated Silicon Solution ( ISSI ); Environmental Compliance

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IS64WV25616BLL-10CTLA3 Overview

Standard SRAM, 256KX16, 10ns, CMOS, PDSO44, TSOP2-44

IS64WV25616BLL-10CTLA3 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Integrated Silicon Solution ( ISSI )
Parts packaging code	TSOP2
package instruction	TSOP2, TSOP44,.46,32
Contacts	44
Reach Compliance Code	compliant
ECCN code	3A991.B.2.A
Factory Lead Time	12 weeks
Is Samacsys	N
Maximum access time	10 ns
I/O type	COMMON
JESD-30 code	R-PDSO-G44
JESD-609 code	e3
length	18.415 mm
memory density	4194304 bit
Memory IC Type	STANDARD SRAM
memory width	16
Humidity sensitivity level	3
Number of functions	1
Number of terminals	44
word count	262144 words
character code	256000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-40 °C
organize	256KX16
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP2
Encapsulate equivalent code	TSOP44,.46,32
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	260
power supply	2.5/3.3 V
Certification status	Not Qualified
Filter level	AEC-Q100
Maximum seat height	1.2 mm
Maximum standby current	0.015 A
Minimum standby current	2 V
Maximum slew rate	0.065 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	2.4 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	AUTOMOTIVE
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal pitch	0.8 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	10
width	10.16 mm
Base Number Matches	1

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IS61WV25616ALL/ALS

IS61WV25616BLL/BLS

IS64WV25616BLL/BLS

256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

FEBRUARY 2017

FEATURES

HIGH SPEED: (IS61/64WV25616ALL/BLL)

• High-speed access time: 8, 10, 20 ns

• Low Active Power: 85 mW (typical)

• Low Standby Power: 7 mW (typical)

CMOS standby

LOW POWER: (IS61/64WV25616ALS/BLS)

• High-speed access time: 25, 35, 45 ns

• Low Active Power: 35 mW (typical)

• Low Standby Power: 0.6 mW (typical)

CMOS standby

• Single power supply

— V

1.65V to 2.2V (IS61WV25616Axx)

— V

2.4V to 3.6V (IS61/64WV25616Bxx)

•

Fully static operation: no clock or refresh required

Three state outputs

Data control for upper and lower bytes

Industrial and Automotive temperature support

Lead-free available

are high-speed, 4,194,304-bit static RAMs organized as

262,144 words by 16 bits. It is fabricated using

ISSI

's high-

performance CMOS technology. This highly reliable process

coupled with innovative circuit design techniques, yields

high-performance and low power consumption devices.

When

is HIGH (deselected), the device assumes a

standby mode at which the power dissipation can be re-

duced down with CMOS input levels.

Easy memory expansion is provided by using Chip Enable

and Output Enable inputs,

and

OE. The active LOW

Write Enable (WE) controls both writing and reading of the

memory. A data byte allows Upper Byte (UB) and Lower

Byte (LB) access.

The IS61WV25616Axx/Bxx and IS64WV25616Bxx are

packaged in the JEDEC standard 44-pin 400mil SOJ,

44-pin TSOP Type II and 48-pin Mini BGA (6mm x 8mm).

DESCRIPTION

The

ISSI

IS61WV25616Axx/Bxx and IS64WV25616Bxx

FUNCTIONAL BLOCK DIAGRAM

A0-A17

DECODER

256K x 16

MEMORY ARRAY

VDD

GND

I/O0-I/O7

Lower Byte

I/O8-I/O15

Upper Byte

I/O

DATA

CIRCUIT

COLUMN I/O

CONTROL

CIRCUIT

notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the lat-

est version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reason-

ably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications

unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

Integrated Silicon Solution, Inc. — www.issi.com

Rev. H1

02/10/2017

IS64WV25616BLL-10CTLA3 Related Products

	IS64WV25616BLL-10CTLA3	IS61WV25616BLL-10BI-TR	IS64WV25616BLL-10BLA3-TR
Description	Standard SRAM, 256KX16, 10ns, CMOS, PDSO44, TSOP2-44	Standard SRAM, 256KX16, 10ns, CMOS, PBGA48	Standard SRAM, 256KX16, 10ns, CMOS, PBGA48
Is it Rohs certified?	conform to	incompatible	conform to
Maker	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )
Reach Compliance Code	compliant	compliant	compliant
Factory Lead Time	12 weeks	8 weeks	12 weeks
Maximum access time	10 ns	10 ns	10 ns
I/O type	COMMON	COMMON	COMMON
JESD-30 code	R-PDSO-G44	R-PBGA-B48	R-PBGA-B48
memory density	4194304 bit	4194304 bit	4194304 bit
Memory IC Type	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
memory width	16	16	16
Number of terminals	44	48	48
word count	262144 words	262144 words	262144 words
character code	256000	256000	256000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	125 °C	85 °C	125 °C
Minimum operating temperature	-40 °C	-40 °C	-40 °C
organize	256KX16	256KX16	256KX16
Output characteristics	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TSOP2	FBGA	FBGA
Encapsulate equivalent code	TSOP44,.46,32	BGA48,6X8,30	BGA48,6X8,30
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE	GRID ARRAY, FINE PITCH	GRID ARRAY, FINE PITCH
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL
power supply	2.5/3.3 V	2.5/3.3 V	2.5/3.3 V
Certification status	Not Qualified	Not Qualified	Not Qualified
Maximum standby current	0.015 A	0.009 A	0.015 A
Minimum standby current	2 V	2 V	2 V
Maximum slew rate	0.065 mA	0.045 mA	0.065 mA
surface mount	YES	YES	YES
technology	CMOS	CMOS	CMOS
Temperature level	AUTOMOTIVE	INDUSTRIAL	AUTOMOTIVE
Terminal form	GULL WING	BALL	BALL
Terminal pitch	0.8 mm	0.75 mm	0.75 mm
Terminal location	DUAL	BOTTOM	BOTTOM
package instruction	TSOP2, TSOP44,.46,32	FBGA, BGA48,6X8,30	-
Filter level	AEC-Q100	-	AEC-Q100
Base Number Matches	1	1	-

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