APTGS10X120RTP2: Without Brake (Pin 7 & 14 not connected)
20 19
18 17 16 15
14 13 12 11 10
Benefits
•
•
•
•
•
•
•
•
Low conduction losses
Stable temperature behavior
Very rugged
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
21
22
9
8
23
24
7
1
2
3
4
5
6
All ratings @ T
j
= 25°C unless otherwise specified
I
FSM
Surge Forward Current
t
p
= 10ms
A
T
j
= 150°C
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1-4
APTGS10X120BTP2 – Rev 0
Symbol
V
RRM
I
D
Parameter
Repetitive Peak Reverse Voltage
DC Forward Current
T
C
= 80°C
T
j
= 25°C
Max ratings
1600
10
300
230
Unit
V
July, 2003
1. Absolute maximum ratings
Diode rectifier
Absolute maximum ratings
APTGS10X120RTP2
APTGS10X120BTP2
IGBT & Diode Brake
(only for APTGS10X120BTP2)
Absolute maximum ratings
Symbol
V
CES
I
C
I
CM
V
GE
P
D
I
F
Parameter
Collector - Emitter Breakdown Voltage
T
C
= 25°C
T
C
= 80°C
T
C
= 25°C
T
C
= 25°C
T
C
= 80°C
Max ratings
1200
20
10
20
±20
100
10
Unit
V
A
V
W
A
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
DC Forward Current
Absolute maximum ratings
IGBT & Diode Inverter
Symbol
V
CES
I
C
I
CM
V
GE
P
D
SCSOA
I
F
I
FSM
Parameter
Collector - Emitter Breakdown Voltage
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Short circuit Safe Operating Area
DC Forward Current
Surge Forward Current
T
C
= 25°C
T
C
= 80°C
T
C
= 25°C
T
C
= 25°C
T
j
= 125°C
T
C
= 80°C
T
C
= 80°C
t
p
= 1ms
Max ratings
1200
20
10
25
±20
100
45A @ 720V
10
20
Unit
V
A
V
W
A
2. Electrical Characteristics
Diodes Rectifier
Electrical Characteristics
Symbol Characteristic
I
R
Reverse Current
V
F
R
thJC
Forward Voltage
Junction to Case
Test Conditions
V
R
= 1600V
T
j
= 150°C
T
j
= 25°C
I
F
= 30A
T
j
= 150°C
I
F
= 10A
Min
Typ
2
1.3
0.9
Max
1.5
0.95
1
Unit
mA
V
°C/W
IGBT Brake & Diode
(only for APTGS10X120BTP2)
Electrical Characteristics
Symbol Characteristic
I
CES
V
CE(on)
V
GE(th)
I
GES
C
ies
V
F
R
thJC
Test Conditions
Zero Gate Voltage Collector Current
Collector Emitter on Voltage
Gate Threshold Voltage
Gate – Emitter Leakage Current
Input Capacitance
Forward Voltage
Junction to Case
V
GE
= 0V
V
CE
= 1200V
T
j
= 25°C
T
j
= 125°C
Min
Typ
0.5
0.8
2.4
2.75
5.5
600
2.2
2.1
Max
500
2.85
6.5
300
2.55
1.2
2.3
Unit
µA
mA
V
V
nA
pF
V
°C/W
July, 2003
2-4
APTGS10X120BTP2 – Rev 0
T
j
= 25°C
V
GE
= 15V
I
C
= 10A
T
j
= 125°C
V
GE
= V
CE
, I
C
= 0.35mA
V
GE
= 20V, V
CE
= 0V
V
GE
= 0V, V
CE
= 25V
f = 1MHz
V
GE
= 0V
T
j
= 25°C
I
F
= 10A
T
j
= 125°C
IGBT
Diode
4.5
APT website – http://www.advancedpower.com
APTGS10X120RTP2
APTGS10X120BTP2
IGBT & Diode Inverter
Electrical Characteristics
Symbol Characteristic
BV
CES
Collector - Emitter Breakdown Voltage
I
CES
V
CE(on)
V
GE(th)
I
GES
C
ies
T
d(on)
T
r
T
d(off)
T
f
T
d(on)
T
r
T
d(off)
T
f
E
off
V
F
Q
rr
R
thJC
Zero Gate Voltage Collector Current
Collector Emitter on Voltage
Gate Threshold Voltage
Gate – Emitter Leakage Current
Input Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn off Energy
Forward Voltage
Reverse Recovery Charge
Junction to Case
Test Conditions
V
GE
= 0V, I
C
= 500µA
T
j
= 25°C
V
GE
= 0V
V
CE
= 1200V
T
j
= 125°C
T
j
= 25°C
V
GE
=15V
I
C
= 10A
T
j
= 125°C
V
GE
= V
CE
, I
C
= 0.35 mA
V
GE
= 20V, V
CE
= 0V
V
GE
= 0V, V
CE
= 25V
f = 1MHz
Inductive Switching (25°C)
V
GE
= ±15V
V
Bus
= 600V
I
C
= 10A
R
G
= 82Ω
Inductive Switching (125°C)
V
GE
= ±15V
V
Bus
= 600V
I
C
= 10A
R
G
= 82Ω
V
GE
= 0V
I
F
= 10A
I
F
= 10A
V
R
= 600V
di/dt=400A/µs
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
IGBT
Diode
Min
1200
Typ
0.5
0.8
2.4
2.75
5.5
600
40
45
255
40
45
40
285
60
1.1
2.2
2.1
0.84
1.5
Max
500
2.85
6.5
300
Unit
V
µA
mA
V
V
nA
pF
4.5
ns
ns
mJ
2.55
V
µC
1.2
2.3
°C/W
Temperature sensor NTC
Symbol Characteristic
R
25
Resistance @ 25°C
B
25/50
T
25
= 298.16 K
Min
Typ
5
3375
Max
Unit
kΩ
K
R
T
=
R
25
exp
B
25 / 50
1 1
−
T
25
T
T: Thermistor temperature
R
T
: Thermistor value at T
M5
N.m
g
APT website – http://www.advancedpower.com
3-4
APTGS10X120BTP2 – Rev 0
Symbol Characteristic
RMS Isolation Voltage, any terminal to case t =1 min,
V
ISOL
I isol<1mA, 50/60Hz
T
J
Operating junction temperature range
T
STG
Storage Temperature Range
T
C
Operating Case Temperature
To Heatsink
Torque Mounting torque
Wt
Package Weight
3. Thermal and package characteristics
Min
2500
-40
-40
-40
Typ
Max
150
125
125
3.3
185
Unit
July, 2003
V
°C
APTGS10X120RTP2
APTGS10X120BTP2
4. Package outline
PIN 1
PIN 24
ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS :
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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