A
DVANCED
L
INEAR
D
EVICES,
I
NC.
ALD114804/ALD114804A/ALD114904/ALD114904A
V
GS(th)
= -0.4V
e
TM
EPAD
E
N
®
AB
LE
D
QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD®
MATCHED PAIR MOSFET ARRAY
GENERAL DESCRIPTION
ALD114804/ALD114804A/ALD114904/ALD114904A are monolithic quad/dual N-
Channel MOSFETS matched at the factory using ALD’s proven EPAD® CMOS
technology. These devices are intended for low voltage, small signal applica-
tions. They are excellent functional replacements for normally-closed relay appli-
cations, as they are normally on (conducting) without any power applied, but
could be turned off or modulated when system power supply is turned on. These
MOSFETS have the unique characteristics of, when the gate is grounded, oper-
ating in the resistance mode for low drain voltage levels and in the current source
mode for higher voltage levels and providing a constant drain current.
ALD114804/ALD114804A/ALD114904/ALD114904A MOSFETS are designed for
exceptional device electrical characteristics matching. As these devices are on
the same monolithic chip, they also exhibit excellent temperature tracking char-
acteristics. They are versatile as design components for a broad range of analog
applications, such as basic building blocks for current sources, differential ampli-
fier input stages, transmission gates, and multiplexer applications.
Besides matched pair electrical characteristics, each individual MOSFET also
exhibits well controlled parameters, enabling the user to depend on tight design
limits corresponding to well matched characteristics.
These depletion mode devices are built for minimum offset voltage and differen-
tial thermal response, and they are suitable for switching and amplifying applica-
tions in single supply (0.4V to + 5V ) or dual supply (+/- 0.4V to +/-5V) systems
where low input bias current, low input capacitance and fast switching speed are
desired. These devices exhibit well controlled turn-off and sub-threshold
charactersitics and therefore can be used in designs that depend on sub-thresh-
old characteristics.
The ALD114804/ALD114804A/ALD114904/ALD114904A are suitable for use in
precision applications which require very high current gain, beta, such as current
mirrors and current sources. A sample calculation of the DC current gain at a
drain current of 3mA and gate input leakage current of 30pA = 100,000,000. It is
recommended that the user, for most applications, connect V+ pin to the most
positive voltage potential (or left open unused) and V- and N/C pins to the most
negative voltage potential in the system. All other pins must have voltages within
these voltage limits.
FEATURES
• Depletion mode (normally ON)
• Precision Gate Threshold Voltages: -0.4V +/- 0.02V
• Nominal R
DS(ON)
@V
GS
=0.0V of 5.4KΩ
• Matched MOSFET to MOSFET characteristics
• Tight lot to lot parametric control
• Low input capacitance
• V
GS(th)
match (V
OS
) — 20mV
• High input impedance — 10
12
Ω
typical
• Positive, zero, and negative V
GS(th)
temperature coefficient
• DC current gain >10
8
• Low input and output leakage currents
ORDERING INFORMATION
Operating Temperature Range*
0°C to +70°C
0°C to +70°C
16-Pin
16-Pin
8-Pin
8-Pin
Plastic Dip
SOIC
Plastic Dip
SOIC
Package
Package
Package
Package
ALD114804APC ALD114804ASC ALD114904APA ALD114904ASA
ALD114804 PC ALD114804SC ALD114904PA
ALD114904SA
* Contact factory for industrial temp. range or user-specified threshold voltage values
APPLICATIONS
• Functional replacement of Form B (NC) relays
• Ultra low power (nanowatt) analog and digital
circuits
• Ultra low operating voltage (<0.2V) analog and
digital circuits
• Sub-threshold biased and operated circuits
• Zero power fail safe circuits in alarm systems
• Backup battery circuits
• Power failure and fail safe detector
• Source followers and high impedance buffers
• Precision current mirrors and current sources
• Capacitives probes and sensor interfaces
• Charge detectors and charge integrators
• Differential amplifier input stage
• High side switches
• Peak detectors and level shifters
• Sample and Hold
• Current multipliers
• Discrete analog switches and multiplexers
• Discrete voltage comparators
PIN CONFIGURATION
ALD114804
N/C*
G
N1
D
N1
S
12
V
-
D
N4
G
N4
N/C*
1
2
3
4
5
6
7
8
V
-
V
-
PC, SC PACKAGES
M1
M2
V
-
V
-
16
15
14
N/C*
G
N2
D
N2
V
+
S
34
D
N3
G
N3
N/C*
V
+
V
-
M4
M3
13
12
11
10
9
ALD114904
V-
V-
N/C*
1
2
3
4
8
7
N/C*
G
N1
D
N1
S
12
G
N2
D
N2
V-
M1
M2
6
V-
5
PA, SA PACKAGES
*N/C pins are internally connected.
Connect to V- to reduce noise
Rev 1.0-0506 ©2005 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286
www.aldinc.com
ABSOLUTE MAXIMUM RATINGS
Drain-Source voltage,
V
DS
Gate-Source voltage,
V
GS
Power dissipation
Operating temperature range PA, SA, PC, SC package
Storage temperature range
Lead temperature, 10 seconds
10.6V
10.6V
500 mW
0°C to +70°C
-65°C to +150°C
+260°C
OPERATING ELECTRICAL CHARACTERISTICS
V+ = +5V (or open) V- = -5V TA = 25
°
C unless otherwise specified
CAUTION:
ESD Sensitive Device. Use static control procedures in ESD controlled environment.
ALD114808A / ALD114908A
Parameter
Gate Threshold Voltage
Symbol
VGS(th)
VOS
∆V
OS
∆V
GS(th)
Min
-0.42
Typ
-0.40
Max
-0.38
ALD110848 / ALD114908
Min
-0.44
Typ
-0.40
Max
-0.36
Unit
V
Test Condition
IDS =1µA
VDS = 0.1V
IDS =1µA
VDS1 = VDS2
ID = 1µA
ID = 20µA, VDS = 0.1V
ID = 40µA
VGS = +9.1V
VGS = +3.6V
VDS = +5V
VGS =+3.6 V
VDS = +8.6V
Offset Voltage
VGS1-VGS2
VGS1-VGS2 Tempco
GateThreshold Tempco
2
5
7
20
mV
5
-1.7
0.0
+1.6
12.0
3.0
5
-1.7
0.0
+1.6
12.0
3.0
µV/ °C
mV/
°C
On Drain Current
IDS (ON)
mA
Forward Transconductance
GFS
∆G
FS
GOS
RDS (ON)
1.4
1.4
mmho
Transconductance Mismatch
Output Conductance
1.8
68
1.8
68
%
µmho
VGS =+3.6V
VDS = +8.6V
VDS = 0.1V
VGS = +3.6V
VDS = 0.1V
VGS = +0.0V
Drain Source On Resistance
500
500
Ω
Drain Source On Resistance
RDS (ON)
5.4
5.4
KΩ
Drain Source On Resistance
Tolerance
Drain Source On Resistance
Mismatch
Drain Source Breakdown
Voltage
Drain Source Leakage Current
1
∆R
DS (ON)
10
10
%
∆R
DS (ON)
BVDSX
IDS (OFF)
IGSS
CISS
CRSS
ton
toff
10
0.5
10
0.5
%
V
IDS = 1.0µA
VGS = -1.4V
VGS = -1.4V, VDS =+5V
TA = 125°C
VDS = 0V VGS = +10V
TA =125°C
10
100
4
30
1
10
100
4
30
1
pA
nA
pA
nA
pF
pF
ns
ns
dB
Gate Leakage Current
1
3
3
Input Capacitance
Transfer Reverse Capacitance
Turn-on Delay Time
Turn-off Delay Time
Crosstalk
Notes:
1
2.5
0.1
10
10
60
2.5
0.1
10
10
60
V+ = 5V RL= 5KΩ
V+ = 5V RL= 5KΩ
f = 100KHz
Consists of junction leakage currents
ALD114804/ALD114804A/ALD114904/ALD114904A
Advanced Linear Devices
2
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