VS-60CTQ150HN3
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier, 2 x 30 A
Base
common
cathode
2
FEATURES
• 175 °C T
J
operation
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
TO-220AB
Anode
Anode
2
1 Common 3
cathode
• Guard-ring for enhanced ruggedness and
long term reliability
Available
• AEC-Q101 qualified, meets JESD 201 class 2 whisker test
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
RM
max.
T
J
max.
Diode variation
E
AS
TO-220AB
2 x 30 A
150 V
0.72 V
20 mA at 125 °C
175 °C
Common cathode
0.4 mJ
DESCRIPTION
The center tap Schottky rectifier series has been optimized
for low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
30 A
pk
, T
J
= 125 °C (typical, per leg)
Range
Rectangular waveform
CHARACTERISTICS
VALUES
60
150
710
0.69
-55 to +175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VS-60CTQ150HN3
150
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward
current, see fig. 5
per leg
I
F(AV)
per device
5 µs sine or 3 µs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
Following any rated load
condition and with rated
V
RRM
applied
50 % duty cycle at T
C
= 137 °C, rectangular waveform
60
A
Maximum peak one cycle non-repetitive
surge current per leg, see fig. 7
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
710
270
0.4
0.9
mJ
A
SYMBOL
TEST CONDITIONS
VALUES
30
UNITS
T
J
= 25 °C, I
AS
= 0.9 A, L = 1 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Revision: 09-Jan-15
Document Number: 95839
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-60CTQ150HN3
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
30 A
Maximum forward
voltage
drop per leg
See fig. 1
V
FM (1)
60 A
30 A
60 A
Maximum reverse leakage current per leg
See fig. 2
Typical junction capacitance per leg
Typical series inductance per leg
Maximum
voltage
rate of change
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
I
RM
C
T
L
S
dV/dt
T
J
= 25 °C
T
J
= 125 °C
TEST CONDITIONS
T
J
= 25 °C
T
J
= 125 °C
V
R
= Rated V
R
TYP
0.83
0.98
0.67
0.82
7
7.2
-
-
-
MAX.
0.88
1.09
0.72
0.87
75
20
650
7.5
10 000
μA
mA
pF
nH
V/μs
V
UNITS
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from package
body
Rated V
R
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
per leg
Maximum thermal resistance,
junction to case
per package
Typical thermal resistance,
case to heatsink
Approximate weight
minimum
maximum
Case style TO-220AB
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
DC operation, see fig. 4
DC operation
Mounting surface, smooth and greased
TEST CONDITIONS
VALUES
-55 to +175
1.2
0.6
0.25
6
0.21
6 (5)
12 (10)
g
oz.
kgf · cm
(lbf · in)
°C/W
UNITS
°C
Mounting torque
Marking device
60CTQ150H
Revision: 09-Jan-15
Document Number: 95839
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-60CTQ150HN3
www.vishay.com
Vishay Semiconductors
100
I
F
- InstantaneousForward Current (A)
1000
T
J
= 175 °C
I
R
- Reverse Current (mA)
10
T
J
= 150 °C
T
J
= 125 °C
100
1
T
J
= 100 °C
T
J
= 75 °C
0.1
10
T
J
= 50 °C
0.01
T
J
= 175 °C
T
J
= 125 °C
T
J
= 25 °C
1
0.2
T
J
= 25 °C
0.001
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
20
40
60
80
100
120
140
160
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics (Per Leg)
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
1000
C
T
- Junction Capacitance (pF)
T
J
= 125 °C
100
0
40
80
120
160
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
Z
thJC
- Thermal Impedance (°C/W)
10
1
P
DM
0.1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
t
1
t
2
0.01
Single pulse
(thermal resistance)
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Leg)
Revision: 09-Jan-15
Document Number: 95839
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-60CTQ150HN3
www.vishay.com
Vishay Semiconductors
35
Allowable Case Temperature (°C)
180
170
160
150
140
130
120
110
100
90
DC
Average Power Loss (W)
30
25
RMS limit
DC
20
15
10
5
0
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
Square
wave
(D = 0.50)
80 % rated V
R
applied
See note (1)
0
5
10
15
20
25
30
35
40
45
0
5
10
15
20
25
30
35
40
45
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs. Average
Forward Current (Per Leg)
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
I
FSM
- Non-Repetitive Surge Current (A)
1000
At any rated load condition
and
with
rated V
RRM
applied following surge
100
10
100
1000
10 000
t
p
- Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
L
High-speed
switch
Freewheel
diode
40HFL40S02
+ V
d
= 25 V
D.U.T.
IRFP460
R
g
= 25
Ω
Current
monitor
Fig. 8 - Unclamped Inductive Test Circuit
Note
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
(1)
Revision: 09-Jan-15
Document Number: 95839
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-60CTQ150HN3
www.vishay.com
ORDERING INFORMATION TABLE
Vishay Semiconductors
Device code
VS-
1
1
2
3
4
5
6
7
8
-
-
-
60
2
C
3
T
4
Q
5
150
6
H
7
N3
8
Vishay Semiconductors product
Current rating (60 = 60 A)
Circuit configuration
C = common cathode
-
Package
T = TO-220
-
-
-
Schottky “Q” series
Voltage rating (150 = 150 V)
H = AEC-Q101 qualified
Environmental digit
N3 = halogen-free, RoHS-compliant, and totally lead (Pb)-free
-
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-60CTQ150HN3
QUANTITY PER T/R
50
MINIMUM ORDER QUANTITY
1000
PACKAGING DESCRIPTION
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
www.vishay.com/doc?95222
www.vishay.com/doc?95028
Revision: 09-Jan-15
Document Number: 95839
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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