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BM63767S-VA

Description
600V IGBT INTELLIGENT POWER MODU
Categorysemiconductor    Discrete semiconductor   
File Size2MB,24 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
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BM63767S-VA Overview

600V IGBT INTELLIGENT POWER MODU

BM63767S-VA Parametric

Parameter NameAttribute value
typeIGBT
Configurationthree phase inverter
current30A
Voltage600V
Voltage - Isolation1500Vrms
Package/casing25-PowerDIP module (1.134", 28.80mm)
Datasheet
Inverter for motor control
600V IGBT Intelligent Power Module (IPM)
for high speed switching drive
BM63767S-VA BM63767S-VC
General Description
BM63767S-VA /-VC is an Intelligent Power Module
composed of gate drivers, bootstrap diodes, IGBTs, fly
wheel diodes.
Features
3phase DC/AC Inverter
600V/30A
Low Side IGBT Open Emitter
Built -in Bootstrap Diode
High Side IGBT Gate Driver(HVIC):
SOI (Silicon On Insulator) Process,
Drive Circuit, High Voltage Level Shifting,
Current Limit for Bootstrap Diode,
Control Supply Under-Voltage Locked Out (UVLO)
Low Side IGBT Gate Driver(LVIC):
Drive Circuit, Short Circuit Current Protection (SCP),
Control Supply Under Voltage Locked Out (UVLO),
Thermal Shutdown (TSD)
Fault Signal(LVIC)
Corresponding to SCP (Low Side IGBT), TSD, UVLO
Fault
Input Interface 3.3V, 5V Line
UL Recognized: File E468261
Key Specifications
IGBT Collector-Emitter Voltage V
CESAT
: 1.7V(Typ)
FWD Forward Voltage V
F
:
1.5V(Typ)
FWD Reverse Recovery Time t
rr
:
100ns(Typ)
Module Case Temperature T
C
:
-25 to +100°C
Junction Temperature T
jmax
:
150°C
Package
HSDIP25
HSDIP25VC
W(Typ) x D(Typ) x H(Typ)
38.0mm x 24.0mm x 3.5mm
38.0mm x 24.0mm x 3.5mm
HSDIP25
Application
High Speed Switching Drive of AC100 to 240Vrms(DC
Voltage: Less Than 400V) Class Motor
High Speed Switching Drive of Motor for Washing
Machine, Fan
Typical Application Circuit
+
2
VBU
3
+
VBV
P
24
4
+
VBW
U
V
W
NU
23
22
21
20
5
6
7
8
9
HINU
HINV
HINW
HVCC
GND
LINU
LINV
LINW
LVCC
M
+
MCU
5V
15V
+
10
11
12
13
NV
19
14
15
16
FO
CIN
GND
NW
18
Figure 1. Example of Application Circuit
○Product
structure: Semiconductor IC
○This
product is not designed for protection against radioactive rays
.
www.rohm.com
TSZ02201-0747AB500110-1-2
© 2014 ROHM Co., Ltd. All rights reserved.
1/20
TSZ22111・14・001
30.Oct.2017 Rev.004
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