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AU1PGHM3/85A

Description
DIODE AVALANCHE 400V 1A DO220AA
CategoryDiscrete semiconductor    diode   
File Size111KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
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AU1PGHM3/85A Overview

DIODE AVALANCHE 400V 1A DO220AA

AU1PGHM3/85A Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Reach Compliance Codeunknown
ECCN codeEAR99
Base Number Matches1
AU1PD, AU1PG, AU1PJ, AU1PK, AU1PM
www.vishay.com
Vishay General Semiconductor
Surface Mount Ultrafast Avalanche Rectifiers
eSMP
Series
®
FEATURES
• Very low profile - typical height of 1.0 mm
• Ideal for automated placement
• Glass passivated pellet chip junction
• Ultrafast recovery times for high frequency
• Low reverse current
• Meets MSL level 1, per
LF maximum peak of 260 °C
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
J-STD-020,
Available
SMP
(DO-220AA)
Cathode
Anode
DESIGN SUPPORT TOOLS
Models
Available
click logo to get started
TYPICAL APPLICATIONS
For use in secondary rectification and freewheeling for
ultrafast switching speeds of AC/AC and DC/DC converters
in high temperature conditions for both consumer and
automotive applications.
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
t
rr
I
R
E
AS
V
F
at I
F
= 1.0 A
T
J
max.
Package
Circuit configuration
1.0 A
200 V, 400 V, 600 V, 800 V, 1000 V
30 A, 25 A
75 ns
1 μA
20 mJ
1.6 V
175 °C
SMP (DO-220AA)
Single
MECHANICAL DATA
Case:
SMP (DO-220AA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant, and
automotive grade
Terminals:
matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Average forward current
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
Non-repetitive avalanche energy at I
AS
= 1.0 A, T
A
= 25 °C
Operating junction and storage temperature range
V
RRM
I
F(AV)
I
FSM
E
AS
T
J
, T
STG
30
20
-55 to +175
SYMBOL
AU1PD
AUD
200
AU1PG
AUG
400
AU1PJ
AUJ
600
1.0
25
AU1PK
AUK
800
AU1PM
AUM
1000
V
A
A
mJ
°C
UNIT
Revision: 13-Aug-2018
Document Number: 89291
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

AU1PGHM3/85A Related Products

AU1PGHM3/85A AU1PJHM3/85A AU1PDHM3/85A AU1PMHM3/85A
Description DIODE AVALANCHE 400V 1A DO220AA 1 A, 600 V, SILICON, SIGNAL DIODE, DO-220AA DIODE AVALANCHE 200V 1A DO220AA DIODE AVALANCHE 1000V 1A DO220AA
Is it Rohs certified? conform to conform to conform to conform to
Reach Compliance Code unknown unknow unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99
Maker - Vishay Vishay Vishay
Factory Lead Time - 12 weeks 12 weeks 12 weeks
Configuration - SINGLE SINGLE SINGLE
Diode type - RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) - 1.4 V 1.4 V 1.6 V
JESD-609 code - e3 e3 e3
Humidity sensitivity level - 1 1 1
Maximum non-repetitive peak forward current - 30 A 30 A 25 A
Number of components - 1 1 1
Maximum operating temperature - 175 °C 175 °C 175 °C
Maximum output current - 1 A 1 A 1 A
Peak Reflow Temperature (Celsius) - 260 260 260
Maximum repetitive peak reverse voltage - 600 V 200 V 1000 V
Maximum reverse recovery time - 0.075 µs 0.075 µs 0.075 µs
surface mount - YES YES YES
Terminal surface - Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn)
Maximum time at peak reflow temperature - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
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