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RFN5BGE3STL

Description
SUPER FAST RECOVERY DIODE
Categorysemiconductor    Discrete semiconductor   
File Size1MB,8 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
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SUPER FAST RECOVERY DIODE

RFN5BGE3STL Parametric

Parameter NameAttribute value
Diode typestandard
Voltage - DC Reverse (Vr) (Maximum)350V
Current - average rectification (Io)5A
Voltage at different If - Forward (Vf1.5V @ 5A
speedFast recovery = < 500 ns, > 200mA (Io)
Reverse recovery time (trr)30ns
Current at different Vr - Reverse leakage current10µA @ 350V
Capacitance at different Vr, F-
Installation typesurface mount
Package/casingTO-252-3, DPak (2 leads + tab), SC-63
Supplier device packagingTO-252GE
Operating Temperature - Junction150°C (maximum)
Super Fast Recovery Diode
RFN5BGE3S
Series
Standard Fast Recovery
Dimensions
(Unit : mm)
Datasheet
Land
Size Figure
(Unit : mm)
6.0
General rectification
TO-252
2.3 2.3
Features
1) Low switching loss
ROHM : TO-252GE
Cathode
Structure
2)
High current overload capacity
JEITA : -
Manufacture Date
Open
Anode
Construction
Silicon epitaxial planar type
Taping
Dimensions
(Unit : mm)
Absolute
Maximum Ratings
(T
c
= 25°C)
Parameter
Repetitive peak reverse voltage
Reverse voltage
Average rectified foward current
Forward current surge peak
Operating junction temperature
Storage temperature
Symbol
V
RM
V
R
I
o
I
FSM
T
j
T
stg
Conditions
Duty≦0.5
Direct voltage
60Hz half sin wave , Resistive load
T
c
=95°C
60Hz half sin wave ,Non-repetitive at T
j
=25°C
Limits
350
350
5
50
150
55
to
150
3.0 2.0
Application
1.6
1.6
6.0
Unit
V
V
A
A
°C
°C
-
-
Electrical
Characteristics
(T
j
= 25°C)
Parameter
Forward voltage
Reverse current
Reverse recovery time
Thermal resistance
Symbol
V
F
I
R
trr
R
th(j-c)
Conditions
I
F
=5A
V
R
=350V
I
F
=0.5A, I
R
=1A, Irr=0.25×I
R
Junction to case
Min.
-
-
-
-
Typ. Max. Unit
1.1
0.05
20
-
1.5
10
30
V
A
ns
6.0
°C / W
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
1/4
2018.06 - Rev.D

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