• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
APPLICATIONS
•
•
•
•
•
•
Synchronous rectification
OR-ing
High power density DC/DC
VRMs and embedded DC/DC
DC/AC inverters
Load switch
D
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
max. () at V
GS
= 10 V
R
DS(on)
max. () at V
GS
= 4.5 V
Q
g
typ. (nC)
I
D
(A)
a, g
Configuration
40
0.00100
0.00145
59.2
100
Single
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
PowerPAK SO-8
SiRA50DP-T1-RE3
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
PARAMETER
Drain-source voltage
Gate-source voltage
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
T
C
= 25 °C
T
A
= 25 °C
L = 0.1 mH
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
I
S
I
AS
E
AS
P
D
T
J
, T
stg
LIMIT
40
+20, -16
100
g
100
g
62.5
b, c
50
b, c
400
90
5.6
b, c
45
101
100
64
6.25
b, c
4
b, c
-55 to +150
260
UNIT
V
Continuous drain current (T
J
= 150 °C)
Pulsed drain current (t = 100 μs)
Continuous source-drain diode current
Single pulse avalanche current
Single pulse avalanche Energy
A
mJ
Maximum power dissipation
W
Operating junction and storage temperature range
Soldering recommendations (peak temperature)
d, e
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYPICAL
MAXIMUM
UNIT
b, f
t
10 s
R
thJA
15
20
Maximum junction-to-ambient
°C/W
Maximum junction-to-case (drain)
Steady state
R
thJC
0.95
1.25
Notes
a. Based on T
C
= 25 °C
b. Surface mounted on 1" x 1" FR4 board
c. t = 10 s
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
f. Maximum under steady state conditions is 54 °C/W
g. Package limited
S17-1311-Rev. A, 21-Aug-17
Document Number: 75534
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiRA50DP
www.vishay.com
Vishay Siliconix
SYMBOL
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
V
DS
= 20 V, V
GS
= 0 V, f = 1 MHz
TEST CONDITIONS
V
GS
= 0 V, I
D
= 250 μA
I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= +20, -16 V
V
DS
= 40 V, V
GS
= 0 V
V
DS
= 40 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 20 A
V
GS
= 4.5 V, I
D
= 15 A
V
DS
= 10 V, I
D
= 20 A
MIN.
40
-
-
1
-
-
-
50
-
-
-
-
-
-
-
Q
g
Q
gs
Q
gd
Q
oss
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 20 A, di/dt = 100 A/μs,
T
J
= 25 °C
I
S
= 10 A
T
C
= 25 °C
V
DD
= 20 V, R
L
= 1
I
D
20 A, V
GEN
= 4.5 V, R
g
= 1
V
DD
= 20 V, R
L
= 1
I
D
20 A, V
GEN
= 10 V, R
g
= 1
V
DS
= 20 V, V
GS
= 0 V
f = 1 MHz
V
DS
= 20 V, V
GS
= 10 V, I
D
= 20 A
V
DS
= 20 V, V
GS
= 4.5 V, I
D
= 20 A
-
-
-
-
-
0.2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
25
-5.6
-
-
-
-
-
MAX.
-
-
-
2.2
± 100
1
10
-
UNIT
V
mV/°C
V
nA
μA
A
S
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-source breakdown voltage
V
DS
temperature coefficient
V
GS(th)
temperature coefficient
Gate-source threshold voltage
Gate-source leakage
Zero gate voltage drain current
On-state drain current
a
Drain-source on-state resistance
a
Forward transconductance
a
Dynamic
b
Input capacitance
Output capacitance
Reverse transfer capacitance
C
rss
/C
iss
ratio
Total gate charge
Gate-source charge
Gate-drain charge
Output charge
Gate resistance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
Pulse diode forward current (t
p
= 100 μs)
Body diode voltage
Body diode reverse recovery time
Body diode reverse recovery charge
Reverse recovery fall time
Reverse recovery rise time
-
-
0.71
64
116
40
24
100
400
1.1
128
232
-
-
A
V
ns
nC
ns
8445
1310
110
0.013
129
59.2
25
13
61
0.7
19
10
53
10
56
159
54
36
-
-
-
0.026
194
89
-
-
-
1.2
38
20
106
20
112
318
108
72
ns
nC
pF
0.00086 0.00100
0.00116 0.00145
106
-
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S17-1311-Rev. A, 21-Aug-17
Document Number: 75534
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiRA50DP
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
200
V
GS
= 10 V thru 4 V
Vishay Siliconix
250
160
2nd line
I
D
- Drain Current (A)
V
GS
= 3 V
200
2nd line
I
D
- Drain Current (A)
120
150
T
C
= 25 °C
80
100
40
V
GS
= 2 V
50
T
C
= 125 °C
T
C
= -55 °C
0
0
0.5
1
1.5
2
2.5
V
DS
- Drain-to-Source Voltage (V)
2nd line
0
0
1
2
3
4
5
V
GS
- Gate-to-Source Voltage (V)
2nd line
Output Characteristics
Transfer Characteristics
Axis Title
0.0013
0.0012
V
GS
= 4.5 V
Axis Title
10000
10 000
C
iss
10000
2nd line
R
DS(on)
- On-Resistance (Ω)
8000
1000
1st line
2nd line
2nd line
C - Capacitance (pF)
1000
C
oss
0.0011
0.0010
0.0009
0.0008
0.0007
0
20
40
60
80
100
I
D
- Drain Current (A)
2nd line
V
GS
= 10 V
4000
100
2000
C
rss
100
10
0
0
8
16
24
32
40
V
DS
- Drain-to-Source Voltage (V)
2nd line
10
On-Resistance vs. Drain Current
Capacitance
Axis Title
10
2nd line
V
GS
- Gate-to-Source Voltage (V)
I
D
= 20 A
Axis Title
10000
2nd line
R
DS(on)
- On-Resistance (Normalized)
1.6
V
GS
= 4.5 V, I
D
= 20 A
10000
8
V
DS
= 10 V, 20 V, 30 V
1.4
V
GS
= 10 V,
I
D
= 20 A
1000
1st line
2nd line
1000
1st line
2nd line
100
10
6
1.2
4
100
2
1.0
0.8
0
0
27
54
81
108
135
Q
g
- Total Gate Charge (nC)
2nd line
10
0.6
-50
-25
0
25
50
75
100 125 150
T
J
- Junction Temperature (°C)
2nd line
Gate Charge
On-Resistance vs. Junction Temperature
S17-1311-Rev. A, 21-Aug-17
Document Number: 75534
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
1st line
2nd line
6000
SiRA50DP
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
100
10000
0.005
I
D
= 20 A
Vishay Siliconix
Axis Title
10000
2nd line
R
DS(on)
- On-Resistance (Ω)
2nd line
I
S
- Source Current (A)
10
1000
1st line
2nd line
T
J
= 150 °C
0.004
1000
1st line
2nd line
T
J
= 150 °C
0.003
1
T
J
= 25 °C
0.002
100
100
0.1
0.001
T
J
= 25 °C
0.01
0
0.2
0.4
0.6
0.8
1.0
V
SD
- Source-to-Drain Voltage (V)
2nd line
10
0
1
3
5
7
9
V
GS
- Gate-to-Source Voltage (V)
2nd line
10
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Axis Title
0.6
0.3
2nd line
V
GS(th) - Variance
(V)
0
-0.3
-0.6
I
D
= 5 mA
Axis Title
10000
500
10000
400
1000
2nd line
Power (W)
1st line
2nd line
300
1000
1st line
2nd line
100
100
10
-50
-25
0
25
50
75
100 125 150
T
J
- Temperature (°C)
2nd line
10
0.01
0.1
Time (s)
2nd line
1
10
I
D
= 250 μA
200
100
-0.9
-1.2
0
0.001
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
Axis Title
1000
I
DM
limited
10000
100
2nd line
I
D
- Drain Current (A)
I
D
limited
100 μs
1000
1st line
2nd line
100
10
10
Limited by
R
DS(on) (1)
1 ms
10 ms
100 ms
1s
1
0.1
T
A
= 25 °C
Single pulse
BVDSS limited
10 s
DC
0.01
0.01
(1)
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area
S17-1311-Rev. A, 21-Aug-17
Document Number: 75534
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiRA50DP
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
300
10000
Vishay Siliconix
240
2nd line
I
D
- Drain Current (A)
1000
1st line
2nd line
100
60
10
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
2nd line
180
120
0
Current Derating
a
Axis Title
125
10000
3.0
Axis Title
10000
100
1000
2nd line
Power (W)
1st line
2nd line
75
2nd line
Power (W)
2.4
1000
1st line
2nd line
100
0.6
10
0
25
50
75
100
125
150
T
A
- Ambient Temperature (°C)
2nd line
1.8
50
100
25
1.2
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
2nd line
10
0
Power, Junction-to-Case
Power, Junction-to-Ambient
Note
a. The power dissipation P
D
is based on T
J
max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S17-1311-Rev. A, 21-Aug-17
Document Number: 75534
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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