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CZTA64 TR

Description
TRANS PNP DARL 30V 0.5A SOT223
Categorysemiconductor    Discrete semiconductor   
File Size353KB,3 Pages
ManufacturerCentral Semiconductor
Download Datasheet Parametric View All

CZTA64 TR Overview

TRANS PNP DARL 30V 0.5A SOT223

CZTA64 TR Parametric

Parameter NameAttribute value
Transistor typePNP - Darlington
Current - Collector (Ic) (Maximum)500mA
Voltage - collector-emitter breakdown (maximum)30V
Vce saturation value (maximum value) when different Ib,Ic1.5V @ 100µA,100mA
Current - collector cutoff (maximum)100nA(ICBO)
DC current gain (hFE) at different Ic, Vce (minimum value)20000 @ 100mA,5V
Power - Max2W
Frequency - Transition125MHz
Operating temperature-65°C ~ 150°C(TJ)
Installation typesurface mount
Package/casingTO-261-4,TO-261AA
Supplier device packagingSOT-223
CZTA14 NPN
CZTA64 PNP
SURFACE MOUNT SILICON
COMPLEMENTARY
DARLINGTON TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZTA14 and CZTA64
are complementary silicon Darlington transistors
manufactured by the epitaxial planar process, epoxy
molded in a surface mount package, designed for
applications requiring extremely high gain.
MARKING: FULL PART NUMBER
SOT-223 CASE
MAXIMUM RATINGS:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
ELECTRICAL
SYMBOL
ICBO
IEBO
BVCES
VCE(SAT)
VBE(ON)
hFE
hFE
fT
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ
JA
30
30
10
500
2.0
-65 to +150
62.5
MAX
100
100
1.5
2.0
UNITS
V
V
V
mA
W
°C
°C/W
UNITS
nA
nA
V
V
V
CHARACTERISTICS:
(TA=25°C unless otherwise noted)
TEST CONDITIONS
MIN
VCB=30V
VEB=10V
IC=100µA
IC=100mA, IB=0.1mA
VCE=5.0V, IC=100mA
VCE=5.0V, IC=10mA
VCE=5.0V, IC=100mA
VCE=5.0V, IC=10mA, f=100MHz
30
10,000
20,000
125
MHz
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