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FQB34P10
—
P-Channel
QFET
®
MOSFET
March 2016
FQB34P10
P-Channel QFET
®
MOSFET
100
V,
-33.5
A,
60
mΩ
Description
Features
•
-33.5
A,
-100
V, R
DS(on)
=
60
mΩ (Max.) @ V
GS
=
.10
V,
I
D
=
-16.75
A
• Low Gate Charge (Typ.
85
nC)
• Low Crss (Typ.
170
pF)
• 100% Avalanche Tested
•
175°C Maximum Junction Temperature Rating
This P-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, audio amplifier,
DC motor control, and variable switching power applications.
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