• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
0.
8
m
m
1
Top View
0.
m
6m
2
S
Bottom View
1
G
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
max. () at V
GS
= 4.5 V
R
DS(on)
max. () at V
GS
= 2.5 V
R
DS(on)
max. () at V
GS
= 1.8 V
R
DS(on)
max. () at V
GS
= 1.5 V
R
DS(on)
max. () at V
GS
= 1.2 V
Q
g
typ. (nC)
I
D
(A)
Configuration
12
0.34
0.4
0.55
1.2
2.5
0.47
0.5
a, f
Single
APPLICATIONS
• Load switch
• High speed switching
• DC/DC converters
• Battery-operated and mobile devices
G
D
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
PowerPAK 0806
SiUD412ED-T1-GE3
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
PARAMETER
Drain-source voltage
Gate-source voltage
T
A
= 25 °C
Continuous drain current (T
J
= 150 °C)
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Pulsed drain current (t = 100 μs)
Continuous source-drain diode current
T
A
= 25 °C
T
A
= 70 °C
T
A
= 25 °C
Maximum power dissipation
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Operating junction and storage temperature range
Soldering recommendations (peak temperature)
c
SYMBOL
V
DS
V
GS
LIMIT
12
±5
0.5
a, f
0.5
a, f
0.5
b
0.5
b
UNIT
V
I
D
A
I
DM
I
S
1.5
0.5
a, f
0.37
b
1.25
a
0.8
a
0.37
b
0.24
b
-55 to +150
260
P
D
W
T
J
, T
stg
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum junction-to-ambient
a, d
SYMBOL
t
5s
t
5s
R
thJA
R
thJA
TYPICAL
80
265
MAXIMUM
100
335
UNIT
°C/W
Maximum junction-to-ambient
b, e
Notes
a. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s.
b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 5 s.
c. Refer to IPC / JEDEC
®
(J-STD-020), no manual or hand soldering.
d. Maximum under steady state conditions is 135 °C/W.
e. Maximum under steady state conditions is 400 °C/W.
f. Package limited.
S16-1563-Rev. A, 08-Aug-16
Document Number: 70300
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiUD412ED
www.vishay.com
Vishay Siliconix
SYMBOL
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
TEST CONDITIONS
V
GS
= 0 V, I
D
= 250 μA
I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= ± 4.5 V
V
DS
= 12 V, V
GS
= 0 V
V
DS
= 12 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
5 V, V
GS
= 4.5 V
V
GS
= 4.5 V, I
D
= 0.5 A
V
GS
= 2.5 V, I
D
= 0.2 A
MIN.
12
-
-
0.35
-
-
-
1
-
-
-
-
-
-
-
V
DS
= 6 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 6 V, V
GS
= 4.5 V, I
D
= 0.5 A
V
DS
= 6 V, V
GS
= 4.5 V, I
D
= 0.5 A
f = 1 MHz
V
DD
= 6 V, R
L
= 12
,
I
D
0.5 A,
V
GEN
= 4.5 V, R
g
= 1
-
-
-
-
-
3
-
-
-
-
T
A
= 25 °C
I
S
= 0.5 A, V
GS
= 0 V
-
-
-
-
I
F
= 0.5 A, dI/dt = 100 A/μs, T
J
= 25 °C
-
-
-
TYP.
-
9
-1
-
-
-
-
-
0.27
0.31
0.37
0.42
0.55
1.6
21
13
7
0.47
0.04
0.09
15
2
20
17
10
-
-
0.7
15
3
12.5
2.5
MAX.
-
-
-
0.9
± 10
1
10
-
0.34
0.4
0.55
1.2
2.5
-
-
-
-
0.71
-
-
30
5
40
35
20
0.5
c
1.5
1.2
30
6
-
-
ns
nC
pF
S
A
μA
UNIT
V
mV/°C
V
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-source breakdown voltage
V
DS
temperature coefficient
V
GS(th)
temperature coefficient
Gate-source threshold voltage
Gate-source leakage
Zero gate voltage drain current
On-state drain
current
a
Drain-source on-state
resistance
a
R
DS(on)
V
GS
= 1.8 V, I
D
= 0.1 A
V
GS
= 1.5 V, I
D
= 0.1 A
V
GS
= 1.2 V, I
D
= 0.05 A
Forward
transconductance
a
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
V
DS
= 6 V, I
D
= 0.5 A
Dynamic
b
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Gate resistance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
Pulse diode forward current
Body diode voltage
Body diode reverse recovery time
Body diode reverse recovery charge
Reverse recovery fall time
Reverse recovery rise time
A
V
ns
nC
ns
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
c. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S16-1563-Rev. A, 08-Aug-16
Document Number: 70300
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiUD412ED
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
200.0
10000
10
10
2nd line
I
GSS
- Gate Current (mA)
2nd line
I
GSS
- Gate Current (A)
160.0
T
J
= 25 °C
0
Vishay Siliconix
Axis Title
10000
-1
10
-2
10
-3
10
-4
10
-5
10
-6
10
-7
T
J
= 150 °C
1000
1st line
2nd line
1000
1st line
2nd line
100
T
J
= 25 °C
120.0
80.0
100
40.0
10
-8
0
0
2
4
6
8
10
12
14
V
GS
- Gate-to-Source Voltage (V)
2nd line
10
10
-9
0
2
4
6
8
10
12
14
V
GS
- Gate-to-Source Voltage (V)
2nd line
10
Gate-Current vs. Gate-Source Voltage
Gate-Current vs. Gate-Source Voltage
Axis Title
1.5
V
GS
= 5 V thru 2 V
Axis Title
10000
2
10000
1.2
2nd line
I
D
- Drain Current (A)
2nd line
I
D
- Drain Current (A)
V
GS
= 1.5 V
1.6
1000
1st line
2nd line
T
C
= 25 °C
1000
1st line
2nd line
100
0.4
T
C
= 125 °C
T
C
= -55 °C
0.9
1.2
0.6
100
0.3
V
GS
= 1 V
0.8
0
0
0.5
1
1.5
2
V
DS
- Drain-to-Source Voltage (V)
2nd line
10
0
0
0.5
1
1.5
2
V
GS
- Gate-to-Source Voltage (V)
2nd line
10
Output Characteristics
Transfer Characteristics
Axis Title
1
V
GS
= 1.2 V
Axis Title
10000
35
30
10000
2nd line
R
DS(on)
- On-Resistance (Ω)
0.8
V
GS
= 1.5 V
2nd line
C - Capacitance (pF)
1000
0.6
V
GS
= 1.8 V
25
C
iss
1000
1st line
2nd line
100
10
8
10
12
20
15
10
5
C
oss
C
rss
0.4
V
GS
= 2.5 V
V
GS
= 4.5 V
100
0.2
0
0
0.3
0.6
0.9
1.2
1.5
I
D
- Drain Current (A)
2nd line
10
0
0
2
4
6
V
DS
- Drain-to-Source Voltage (V)
2nd line
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
S16-1563-Rev. A, 08-Aug-16
Document Number: 70300
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiUD412ED
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
5
2nd line
V
GS
- Gate-to-Source Voltage (V)
I
D
= 0.5 A
Vishay Siliconix
Axis Title
10000
2nd line
R
DS(on)
- On-Resistance (Normalized)
1.8
I
D
= 0.5 A
10000
V
GS
= 4.5 V; 2.5 V; 1.8 V; 1.5 V
4
1000
1st line
2nd line
3
V
DS
= 6 V
1.6
1.4
1.2
1.0
0.8
0.6
-50
-25
0
1000
1st line
2nd line
100
10
25
50
75
100 125 150
T
J
- Junction Temperature (°C)
2nd line
10000
I
D
= 0.5 A
V
GS
= 1.2 V
2
V
DS
= 3 V
100
V
DS
= 9.6 V
1
0
0
0.1
0.2
0.3
0.4
0.5
0.6
Q
g
- Total Gate Charge (nC)
2nd line
10
Gate Charge
On-Resistance vs. Junction Temperature
Axis Title
10
10000
0.8
Axis Title
2nd line
R
DS(on)
- On-Resistance (Ω)
2nd line
I
S
- Source Current (A)
0.6
1st line
2nd line
100
10
0
1
2
3
4
5
V
GS
- Gate-to-Source Voltage (V)
2nd line
T
J
= 125 °C
1000
T
J
= 150 °C
1000
1
T
J
= 25 °C
1st line
2nd line
0.4
100
0.2
T
J
= 25 °C
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
2nd line
10
0
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Axis Title
0.5
10000
4.0
0.5
3.0
1000
2nd line
V
GS(th)
(V)
1st line
0.4
Power (W)
2.0
0.4
I
D
= 250 μA
100
0.3
1.0
0.3
-50
-25
0
25
50
75
100 125 150
T
J
- Temperature (°C)
2nd line
10
0.0
0.0001 0.001 0.01
0.1
1
Time (s)
10
100
1000
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
S16-1563-Rev. A, 08-Aug-16
Document Number: 70300
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiUD412ED
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
1.4
1.2
2nd line
I
D
- Drain Current (A)
1.0
0.8
0.6
0.4
0.2
0.0
0
25
50
75
100
125
150
T
A
- Ambient Temperature (°C)
2nd line
10
Package limited
Vishay Siliconix
10000
1000
1st line
2nd line
100
Axis Title
10
Limited by R
DS(on)
(1)
Current Derating
a
1.2
1.0
2nd line
I
D
- Drain Current (A)
10000
I
DM
limited
0.8
Power (W)
0.6
0.4
0.2
0
0
25
50
75
100
125
T
A
- Ambient Temperature (°C)
150
1
100 μs
1 ms
I
D(ON)
limited
1000
1st line
2nd line
0.1
10 ms
10
s,
1
s,
100 ms
100
DC
T
A
= 25 °C
Single
pulse
BVDSS limited
0.01
0.1
(1)
10
1
10
100
V
DS
- Drain-to-Source Voltage (V)
V
GS
> minimum V
GS
at which R
DS(on)
is
specified
Power, Junction-to-Ambient
Safe Operating Area, Junction-to-Ambient
Note
a. The power dissipation P
D
is based on T
J
max. = 25 °C, using junction-to-ambient thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S16-1563-Rev. A, 08-Aug-16
Document Number: 70300
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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