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BZX84C2V4LFHT116

Description
ZENER DIODE (AEC-Q101 QUALIFIED)
CategoryDiscrete semiconductor    diode   
File Size2MB,9 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
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ZENER DIODE (AEC-Q101 QUALIFIED)

BZX84C2V4LFHT116 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerROHM Semiconductor
package instructionR-PDSO-G3
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time12 weeks
Other featuresHIGH RELIABILITY
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
polarityUNIDIRECTIONAL
Maximum power dissipation0.25 W
GuidelineAEC-Q101
Nominal reference voltage2.4 V
surface mountYES
technologyZENER
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature10
Maximum voltage tolerance8.33%
Working test current5 mA
BZX84C2V4LFH
Zener Diode
(AEC-Q101 qualified)
Data sheet
     
 
                                     
   
     
Outline
P
D
250
mW
 
 
 
 
 
 
 
 
  
Feature
Inner Circuit
High reliability
Small mold type
Application
Packaging Specification
Packing
Reel Size(mm)
T
aping Width(mm)
Basic Ordering Unit(pcs)
T
aping Code
Marking
Voltage regulation
Structure
Silicon Epitaxial Planar
Absolute Maximum Rating (T
a
= 25
)
Embossed T
ape
180
8
3000
T116
D3C
Parameter
Power dissipation
Junction temperature
Storage temperature
Symbol
P
D
T
j
T
stg
Condition
on Glass-epoxy substrate
-
-
Limits
250
2.0
150
-65
½
150
 
Unit
mW
mW/°C
www.rohm.com
© 2017 ROHM Co., Ltd. All rights reserved.
1/5
 
 
   
 
   
 
2017/07/24_Rev.002
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