Technical Data Sheet
1206 Package Phototransistor With Inner Lens
PT11-21B/L41/TR8
Features
˙Fast
response time
˙High
photo sensitivity
˙Small
junction capacitance
Descriptions
˙PT11-21B/L41/TR8
is a phototransistor in miniature SMD package
which is molded in black plastic with flat top view lens.
The device is spectrally matched to infrared emitting diode.
Applications
˙Automatic
door sensor
˙Copier
˙Game
machine
˙Infrared
applied systm
Device Selection Guide
LED Part No.
PT
Chip
Material
Silicon
Lens Color
Black
Everlight Electronics Co., Ltd.
Device No：DTT-011-115
http:\\www.everlight.com
Prepared date：03-17-2003
Rev 1.0
Page: 1 of 10
Prepared by：Jaine Tsai
PT11-21B/L41/TR8
Package Dimensions
Collector
Emitter
Notes:
1.All dimensions are in millimeters
2.Tolerances unless dimensions
±
0.1mm
Absolute Maximum Ratings (Ta=25℃)
Parameter
Collector-Emitter Voltage
Emitter-Collector-Voltage
Collector Current
Operating Temperature
Storage Temperature
Soldering Temperature
Power Dissipation at(or below)
25℃Free Air Temperature
Symbol
V
CEO
V
ECO
I
C
T
opr
T
stg
T
sol
P
c
Rating
60
5
20
-25 ~ +85
-40 ~ +85
260
75
Units
V
V
mA
℃
℃
℃
mW
Notes:
*1:Soldering time≦5 seconds.
Everlight Electronics Co., Ltd.
Device No：DTT-011-115
http:\\www.everlight.com
Prepared date：03-17-2003
Rev 1.0
Page: 2 of 10
Prepared by：Jaine Tsai
PT11-21B/L41/TR8
Electro-Optical Characteristics (Ta=25℃)
Parameter
Rang Of Spectral Bandwidth
Wavelength Of Peak Sensitivity
Collector-Emitter Breakdown
Voltage
Emitter-Collector Breakdown
Voltage
Collector-Emitter Saturation
Voltage
Collector Dark Current
Symbol
λ
0.5
λ
P
BV
CEO
BV
ECO
V
CE(sat)
I
CEO
Condition
---
---
I
C
=100μA
Ee=0mW/cm
2
I
E
=100μA
Ee=0mW/cm
2
I
C
=2mA
Ee=1m W/cm
2
V
CE
=20V
Ee=0mW/cm
2
V
CE
=5V
Ee=1mW /cm
2
V
CE
=5V
I
C
=1mA
R
L
=1000Ω
Min
730
---
60
Typ
---
940
---
Max
1100
---
---
Unit
nm
nm
V
5
---
---
---
---
---
---
0.4
100
V
V
nA
On State Collector Current
Rise Time
Fall Time
I
C(ON)
t
r
t
f
0.3
---
---
0.75
15
15
---
mA
μS
---
Everlight Electronics Co., Ltd.
Device No：DTT-011-115
http:\\www.everlight.com
Prepared date：03-17-2003
Rev 1.0
Page: 3 of 10
Prepared by：Jaine Tsai
PT11-21B/L41/TR8
Typical Electro-Optical Characteristics Curves
Fig.1Collector Power Dissipation vs.
Ambient Temperature
Fig.2 Spectral Sensitivity
100
80
60
40
20
0
-25
0
25
50
75 85 100
1.0
Ta=25 C
0.8
0.6
0.4
0.2
0
700
800
900
1000 1100 1300
Fig.3 Relative Collector Current vs.
Ambient Temperature
Fig.4 Collector Current vs.
Irradiance
160
140
120
100
80
60
40
20
0
0
10
20
30
40 50
60
70
2
10
C
1
0.1
0.01
0.001
0.01
0.1
1
2
10
Everlight Electronics Co., Ltd.
Device No：DTT-011-115
http:\\www.everlight.com
Prepared date：03-17-2003
Rev 1.0
Page: 4 of 10
Prepared by：Jaine Tsai
PT11-21B/L41/TR8
Typical Electro-Optical Characteristics Curves
Fig.5 Collector Dark Current vs.
Ambient Temperature
Fig.6 Collector Current vs.
Collector-Emitter Voltage
10
14
12
10
10
10
8
6
10
4
2
10
0
25
50
75
100
0
0
1
2
3
4
Everlight Electronics Co., Ltd.
Device No：DTT-011-115
http:\\www.everlight.com
Prepared date：03-17-2003
Rev 1.0
Page: 5 of 10
Prepared by：Jaine Tsai
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