EVERLIGHT ELECTRONICS CO., LTD.
DEVICE NUMBER :
ECN :
DPT-026-109
REV :
PAGE :
1.0
1/7
3mm Phototransistor
MODEL NO :
█
Features :
•
Fast response times
•
High photo sensitivity
PT264-6B
█
Description :
•
PT264-6B is a high speed and high sensitive silicon NPN phototransistor molder in a
standard
φ3
mm package. The package is an IR filter , spectrally mathch to infrared
emitter diode.
█
Applications :
•
Optoelectronic switchs
•
VCRs ,Video cameras
•
Floppy disk drives
•
Infrared applied systems
CHIP
PART NO.
PT
MATERIAL
Silicon
LENS COLOR
Black
EVERLIGHT ELECTRONICS CO., LTD.
DEVICE NUMBER :
ECN :
DPT-026-109
REV :
PAGE :
1.0
2/7
3mm Phototransistor
MODEL NO :
PT264-6B
█
Package Dimension :
█
Notes :
1.All dimensions are in millimeter.
2.Protruded resin under flange 1.5 mm Max.
3.Lead spacing is measured where the lead emerge from the package.
4.Lens color：Black.
5.Above specification may be changed without notice. EVERLIGHT will reserve authority
on material change for above specification.
6.These specification sheets include materials protected under copyright of EVERLIGHT
corporation . Please don’t reproduce or cause anyone to reproduce them without
EVERLIGHT’s consent.
7.When using this product , please observe the absolute maximum ratings and the
instructions for use outlined in these specification sheets. EVERLIGHT assumes no
responsibility for any damage resulting from use of the product which does not comply
with the absolute maximum ratings and the instructions included in these specification
sheets.
EVERLIGHT ELECTRONICS CO., LTD.
DEVICE NUMBER :
ECN :
DPT-026-109
REV :
PAGE :
1.0
3/7
3mm Phototransistor
MODEL NO :
PT264-6B
█
Absolute Maximum Ratings at T
A
= 25℃
℃
Parameter
Symbol
Rating
Collector-Emitter Voltage
Emitter-Collector- Voltage
Collector Current
Operating Temperature
Storage Temperature
Soldering Temperature
Power Dissipation at(or below)
25℃Free Air Temperature
V
CEO
V
ECO
I
C
Topr
Tstg
Tsol
Pc
30
5
20
-25 ~ +85
-40 ~ +85
260
75
Unit
V
V
mA
℃
℃
℃
mW
Notice
4mm from mold body
less than 5 seconds
█
Electronic Optical Characteristics :
Parameter
Symbol
Min.
Collector-Emitter
Breakdown Voltage
Emitter-Collector
Breakdown Voltage
Collector-Emitter
Saturation Voltage
Rise Time
Fall Time
Collector Dark
Current
On State Collector
Current
Wavelength of
Peak Sensitivity
Rang of Spectral
Bandwidth
BV
CEO
BV
ECO
V
CE(sat)
t
r
t
f
I
CEO
I
C(on)
λ
p
λ
0.5
30
Typ.
----
Max.
----
Unit
V
Condition
I
C
=100μA
Ee=0mW/cm
2
I
E
=100μA
Ee=0mW/cm
2
I
C
=2mA
Ee=1mW/cm
2
V
CE
=5V
I
C
=1mA
R
L
=1000Ω
V
CE
=20V
Ee=0mW/cm
2
V
CE
=5V
Ee=1mW/cm
2
----
----
5
----
----
V
----
----
0.4
V
----
----
----
0.7
----
----
15
15
----
1.0
980
840---1200
----
----
100
----
----
----
μS
nA
mA
nm
nm
EVERLIGHT ELECTRONICS CO., LTD.
DEVICE NUMBER :
ECN :
DPT-026-109
REV :
PAGE :
1.0
4/7
3mm Phototransistor
MODEL NO :
PT264-6B
■
Typical Electrical/Optical/Characteristics Curves
EVERLIGHT ELECTRONICS CO., LTD.
DEVICE NUMBER :
ECN :
DPT-026-109
REV :
PAGE :
1.0
5/7
3mm Phototransistor
MODEL NO :
PT264-6B
█
Reliability Test Item And Condition
The reliability of products shall be satisfied with items listed below.
Confidence level:90%
LTPD:10%
NO.
Item
Test Conditions
Test
Sample
Failure
Hours/
Size
Judgement
Cycle
Criteria
1
Solder Heat
TEMP : 260℃ ± 5
℃
5 sec
22 PCs
I
c(on)
≦L×
0.8
50 cycle
5 min
Ac/Re
0/1
H : +85℃
30 min
2
Temperature Cycle
22 PCs
L :Lower
specification
limit
0/1
L : -55℃
30 min
H : +100℃
5 min
3
Thermal Shock
10 sec
L : -10℃
30 min
50 cycle
22 PCs
0/1
4
5
6
7
High Temperature
TEMP. : +100℃
Storage
Low Temperature
TEMP. : -55℃
Storage
DC Operating Life
V
CE
=5V
High Temperature /
85℃ / 85% R.H.
High Humidity
1000 hrs
1000 hrs
1000 hrs
1000 hrs
22 PCs
22 PCs
22 PCs
22 PCs
0/1
0/1
0/1
0/1
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