KSC2518
KSC2518
High Speed, High Voltage Switching
• Low Collector Saturation Voltage
• Specified of Reverse Biased SOA With Inductive Load
1
TO-220
2.Collector
3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current (DC)
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
Parameter
1.Base
Value
500
400
7
4
8
1
40
150
- 55 ~ 150
Units
V
V
V
A
A
A
W
°C
°C
* PW≤350µs, Duty Cycle≤10%
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
V
CEO
(sus)
V
CEX
(sus)1
V
CEX
(sus)2
I
CBO
I
CER
I
CEX1
I
CEX2
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
t
ON
t
STG
t
F
Parameter
Collector-Emitter Sustaining Voltage
Collector-Emitter Sustaining Voltage
Collector-Emitter Sustaining Voltage
Collector Cut-off Current
Collector Cut-off Current
Collector Cut-off Current
Test Condition
I
C
= 2A, I
B1
= 0.4A, L = 1mH
I
C
= 2A, I
B1
= -I
B2
= 0.4A
T
a
= 125°C, L = 180µH, Clamped
I
C
= 4A, I
B1
= 0.8A, -I
B2
= 0.4A
T
a
= 125°C, L = 180µH, Clamped
V
CB
= 400V, I
E
= 0
V
CE
= 400V, R
BE
= 51Ω @ T
C
= 125°C
V
CE
= 400V, V
BE
(off) = -1.5V
V
CE
= 400V, V
BE
(off) = -1.5V @
T
C
= 125°C
V
EB
= 5V, I
C
= 0
V
CE
= 5V, I
C
= 0.3A
V
CE
= 5V, I
C
= 1.5A
I
C
= 1.5A, I
B
= 0.3A
I
C
= 1.5A, I
B
= 0.3A
V
CC
= 150V, I
C
= 2A
I
B1
= - I
B2
= 0.4A
R
L
= 75Ω
20
10
Min.
400
450
400
10
1
10
1
10
80
1
1.5
1
2.5
0.7
V
V
µs
µs
µs
Max.
Units
V
V
V
µA
mA
µA
mA
µA
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Turn ON Time
Storage Time
Fall Time
* Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed
h
FE
Classification
Classification
h
FE1
©2000 Fairchild Semiconductor International
R
20 ~ 40
O
30 ~ 60
Y
40 ~ 80
Rev. A, February 2000
KSC2518
Typical Characteristics
5
1000
V
CE
= 5V
Pulsed
I
C
[A], COLLECTOR CURRENT
4
3
I
B
=0.4A
I
B
=0.3A
I
B
=0.2A
h
FE
, DC CURRENT GAIN
I
B
=0.5A
100
2
I
B
=0.1A
I
B
=0.05A
10
1
0
0
2
4
6
8
10
1
0.01
0.1
1
10
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
10
100
I
C
=5I
B
Plsed
I
C
=5I
B
1=-5I
B
2
Pulsed, V
CC
=150V
V
BE
(sat)
t
on
[uS], TURN ON TIME
t
stg
[uS], STORAGE TIME
t
f
[uS], FALL TIME
1
10
t
stg
1
0.1
V
CE
(sat)
t
f
t
on
0.1
0.1
0.01
0.01
0.1
1
10
1
10
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Turn On, Storage and Fall Time
vs Collector Current
100
5
I
C
[A], COLLECTOR CURRENT
10
PW
Dissipation Limited
1
DC
1m
10
0u
s
s
=1
0u
s
I
C
[A], COLLECTOR CURRENT
4
3
m
10
s
ite
d
b
S/
m
Li
2
V
CEX
(SUS)
V
CEO
(SUS)
0.1
1
0.01
1
10
100
1000
0
0
100
200
300
400
500
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
V
CE
(s), COLLECTOR-EMITTER VOLTAGE
Figure 5. Forward Bias Safe Operating Area
Figure 6. Reverse Bias Safe Operating Area
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSC2518
Typical Characteristics
(Continued)
160
140
20
P
D
[W], POWER DISSIPATION
150
200
120
15
dT[%], I
C
DERATION
100
80
60
40
20
0
0
50
o
S/b
DI
LIM
SS
ITE
IP
D
AT
IO
N
LI
M
UT
ED
10
5
0
100
0
50
o
100
150
T
C
[ C], CASE TEMPERATURE
T
C
[ C], CASE TEMPERATURE
Figure 7. Derating Curve of Safe Operating Areas
Figure 8. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSC2518
Package Demensions
TO-220
9.90
±0.20
1.30
±0.10
2.80
±0.10
4.50
±0.20
(8.70)
ø3.60
±0.10
(1.70)
1.30
–0.05
+0.10
9.20
±0.20
(1.46)
13.08
±0.20
(1.00)
(3.00)
15.90
±0.20
1.27
±0.10
1.52
±0.10
0.80
±0.10
2.54TYP
[2.54
±0.20
]
2.54TYP
[2.54
±0.20
]
10.08
±0.30
18.95MAX.
(3.70)
)
(45
°
0.50
–0.05
+0.10
2.40
±0.20
10.00
±0.20
Dimensions in Millimeters
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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®
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®
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when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2000 Fairchild Semiconductor International
Rev. E
Analogue and Mixed Signal
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