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FQPF1P50

Description
MOSFET P-CH 500V 1.03A TO-220F
Categorysemiconductor    Discrete semiconductor   
File Size563KB,8 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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FQPF1P50 Overview

MOSFET P-CH 500V 1.03A TO-220F

FQPF1P50 Parametric

Parameter NameAttribute value
FET typeP channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)500V
Current - Continuous Drain (Id) at 25°C1.03A(Tc)
Drive voltage (maximum Rds On, minimum Rds On)10V
Rds On (maximum value) when different Id, Vgs10.5 ohms @ 515mA, 10V
Vgs (th) (maximum value) when different Id5V @ 250µA
Gate charge (Qg) at different Vgs (maximum value)14nC @ 10V
Vgs (maximum value)±30V
Input capacitance (Ciss) at different Vds (maximum value)350pF @ 25V
FET function-
Power dissipation (maximum)28W(Tc)
Operating temperature-55°C ~ 150°C(TJ)
Installation typeThrough hole
Supplier device packagingTO-220F
Package/casingTO-220-3 whole package
FQPF1P50
December 2000
QFET
FQPF1P50
500V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize
on-state
resistance,
provide
superior
switching
performance, and withstand a high energy pulse in the
avalanche and commutation modes. These devices are
well suited for electronic lamp ballasts based on the
complementary half bridge topology.
TM
Features
-1.03A, -500V, R
DS(on)
= 10.5Ω @V
GS
= -10 V
Low gate charge ( typical 11 nC)
Low Crss ( typical 6.0 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
S
!
G
!
▶ ▲
GD S
TO-220F
FQPF Series
!
D
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
T
C
= 25°C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25°C)
Drain Current
- Continuous (T
C
= 100°C)
Drain Current
- Pulsed
(Note 1)
FQPF1P50
-500
-1.03
-0.65
-4.12
±
30
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
110
-1.03
2.8
-4.5
28
0.22
-55 to +150
300
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Thermal Characteristics
Symbol
R
θJC
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Typ
--
--
Max
4.46
62.5
Units
°C/W
°C/W
©2000 Fairchild Semiconductor International
Rev. A2, December 2000
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